Engineering topics
Publications and source records attributed to Wilson, B. A..
This volume serves as the Proceedings of this workshop. It contains the manuscripts provided by plenary and parallel session presenters, and summary reports generated from this material and from information presented during the panel discussions. Where manuscripts were not provided, extended abstracts, if available, have been included. The order of the papers follows the original workshop agenda.
During FY'92, the NASA Code RS System Analysis RTOP funded a study to evaluate the potential impact of emerging microtechnologies on future space missions. As part of this study, a workshop,.
Absorption data are presented for 2-4-monolayer InAs/GaAs single quantum wells obtained at 77 K using a polarization-based measurement technique. The special contribution of the optical loss features arising from bulk GaAs was minimized using the polarization selectivity of absorption in single quantum wells. The double structure observed in the spectra is attributed to transitions involving confined heavy holes and both confined and unconfined electron states.
The strain-induced splitting of the heavy-hole (hh) and light-hole (lh) valence bands for 4-microns thick GaAs/Si is examined on a microscopic scale using linear polarized-cathodoluminescence imaging and spectroscopy. The energies and intensities of the hh- and lh-exciton luminescence are quantitatively analyzed to determine spatial variations in the stress tensor. The results indicate that regions near and far from the microcracks are primarily subject to uniaxial and biaxial tensile stresses, respectively. The transition region where biaxial stress gradually converts to uniaxial stress is analyzed, and reveals a mixing of lh and hh characters in the strain-split bands.
Three InAs/GaAs single quantum wells of two-, three-, and four-monolayer thickness were characterized using optical and structural techniques. The results of high-resolution transmission electron (HRTEM) microscopy and optical studies which combine absorption, photoluminescence (PL), photoreflectance, and cathodoluminescence are presented. Using the polarization modulated absorptance technique, we observed two absorption features in our samples at 77 K. On the basis of their polarization properties and comparison with an envelope function calculation, these structures are assigned to transitions between the confined heavy-hole and confined and unconfined electron levels. Photoreflectance spectra of the three-monolayer sample in 77-300 K range show only the fundamental quantum well transition. The temperature dependence of this transition is approximately linear with a slope of 2.2 x 10 exp -4 eV/K, which is significantly lower than in both constituent materials. Comparison to the absorption data reveals that the PL spectra are affected by the carrier diffusion and therefore do not provide direct measure of the exciton density of states. The HRTEM images indicate that, while the interfaces of the two-monolayer sample are smooth and the well thickness is uniform, the four-monolayer sample has uneven interfaces and contains domains of two, three, and four monolayers.
The temperature control and calibration issues encountered in the growth, processing, and characterization of electronic materials are summarized. The primary problem area is identified as temperature control during epitaxial materials growth. While qualitative thermal measurements are feasible and reproducibility is often achievable within a given system, absolute calibration is essentially impossible in many cases, precluding the possibility of portability from one system to another. The procedures utilized for thermal measurements during epitaxial growth are described, and their limitations discussed.
An asymmetric delta-doped GaAs structure is described which exhibits novel photovoltaic effects and low-intensity nonlinear optics. Of particular interest in this kind of structure is the ability to design the electrooptical and nonlinear optical properties and the material response time over a wide range by appropriate design of the doping profile.
The experience of the National Aeronautics and Space Administration (NASA) with extravehicular activity life support emergency oxygen supply subsystems has shown a large number of problems associated with particulate contamination. These problems have resulted in failures of high pressure oxygen component sealing surfaces. A high pressure oxygen filter was designed which would (a) control the particulate contamination level in the oxygen system to a five-micron glass bead rating, ten-micron absolute condition (b) withstand the dynamic shock condition resulting from the sudden opening of 8000 psi oxygen system shutoff valve. Results of the following program tasks are reported: (1) contaminant source identification tests, (2) dynamic system tests, (3) high pressure oxygen filter concept evaluation, (4) design, (5) fabrication, (6) test, and (7) application demonstration.
For abstract, see N78-14786.