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Woicik, Joseph C.

Publications and source records attributed to Woicik, Joseph C..

At least 19 records
All sourcesNASA NTRSDOE OSTI
DOE OSTI2025

Local rare-earth dopant structure in a complex-oxide/semiconductor heterojunction: Molecular beam epitaxy grown Yb-doped SrTiO3 on Si(001)

We have investigated the structural and electronic properties of Yb-doped SrTiO3/Si(001) grown by molecular beam epitaxy. Other rare-earth donor dopants that result in n-type conductivity typically substitute for Sr at the A-sites in the perovskite lattice. In contrast, Yb has been found to substitute predominantly for Ti at the perovskite B-sites based on data from atomically resolved scanning transmission electron microscopy and spectroscopy, as well as extended x-ray absorption fine structure. Yb exhibits two distinct charge states as determined by x-ray absorption spectroscopy and associated modeling, +2.7 and +2.1. These aliovalent substitutional dopants are compensated by donor electrons from oxygen vacancies that form during epitaxial film growth. An atom beam flux mismatch was present during film depositions because it was assumed that Yb would occupy A-sites, leading to a flux matching formula given by Yb + Sr = Ti. However, the formation of YbTi rather than YbSr results in Sr vacancies and extraneous (i.e. non-lattice) Ti atoms in the films, or on the film surfaces. The presence of these defects, together with oxygen vacancies, leads to deep-level electron traps that were detected by resonant photoemission and much higher sheet resistance than that associated with, for instance, La-doped films.

Chambers, Scott A. (ORCID:000000025415043X)↗
DOE OSTI2023

Lattice vibrations and energy landscape of the isoelectronic semiconductor series CuBr, ZnSe, GaAs, and Ge: The special case of CuBr and its $\mathcal{d}$-level chemistry

Here we have examined the lattice vibrations and the energy landscape of the isoelectronic diamond and zincblende semiconductor series CuBr, ZnSe, GaAs, and Ge. Vibrations are found to be an increasing function of ionicity, with the cation sublattice always vibrating more strongly than the anion sublattice. These findings are consistent with density functional theory (DFT) calculations of the energy landscape and temperature-dependent molecular dynamics simulations of the atomic-position fluctuations. For CuBr, inclusion of the Cu 3d Hubbard U term is found necessary to stabilize the zincblende structure and to bring its vibrational amplitudes into agreement with experiment. In addition, vibrations are found to strongly affect the CuBr near-edge x-ray absorption fine structure that we have successfully modeled by including displacements in our theoretical Bethe-Salpeter equation calculations. Reverse Monte Carlo structural refinements using large atomic configurations to simultaneously fit x-ray absorption and x-ray total-scattering data support these conclusions, and they reveal strong Cu-Br first-neighbor correlations and asymmetric distributions of interatomic distances in the temperature ranges of both negative and positive thermal expansion. Delineation of the CuBr valence band photoelectron spectrum into its Cu 3d and Br 4p states uniquely reveals their covalent mixing and further supports the DFT results.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Interface formation and Schottky barrier height for Y, Nb, Au, and Pt on Ge as determined by hard x-ray photoelectron spectroscopy

Development of a robust, thin, hole-blocking (n+) contact on high purity germanium (HPGe) has been the main challenge in the development of Ge-based radiation sensors. Yttrium has been reported to be a viable hole-blocking contact on HPGe, and detectors with low leakage have been fabricated. Niobium has also been considered as a potential hole-blocking contact due to its low work function. Here, we investigate interface chemistry and the Schottky barrier height of Y and Nb, as well as electron-blocking contacts Au and Pt, on Ge(100) surfaces using hard x-ray photoelectron spectroscopy. We find a barrier height of 1.05 ± 0.10 eV for Y/HPGe, confirming the formation of a hole-blocking barrier. For Nb/HPGe, the barrier height of 0.13 ± 0.10 eV demonstrates that the interface is not hole-blocking. The Schottky barrier of Au and Pt was found to be 0.45 ± 0.10 and 0.51 ± 0.10 eV, respectively.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Revisiting the K-edge X-ray absorption fine structure of Si, Ge–Si alloys, and the isoelectronic series: CuBr, ZnSe, GaAs, and Ge

Extended X-ray absorption fine structure (EXAFS) has evolved into an unprecedented local-structure technique that is routinely used to study materials’ problems in the biological, chemical, and physical sciences. Like many other experimental techniques, EXAFS also requires that several key atomic parameters must be known a priori before structural information can be quantitatively determined. Utilizing current analytical methods, we revisit the isoelectronic series CuBr, ZnSe, GaAs, and Ge originally studied by Stern et al. during the early development of EXAFS. We demonstrate that the ab initio EXAFS code FEFF accurately predicts the atomic phase shifts and backscattering amplitudes that are primarily functions of the sum of atomic numbers Z along an EXAFS scattering path. We also investigate quantitative fitting and first- and second-shell phase transferability together with problems that arise if a backscattering atom is identified incorrectly in an EXAFS fitting model. Features in the near-edge region, on the other hand, are shown to require a comprehensive treatment of the band structure and density-of-states, including effects of the screened Coulomb interaction between the photoelectron and core hole. Here, we demonstrate that the Bethe–Salpeter equation (BSE) accurately captures the NEXAFS (or XANES) portion of the spectrum for the isoelectronic series in addition to Si and Ge–Si alloys, including within a few eV of the absorption edge, where band structure and excitonic effects are most important.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2019

Charge Transfer and Built-in Electric Fields between a Crystalline Oxide and Silicon

Built-in electric fields across heterojunctions between semiconducting materials underpin the functionality of modern device technologies. Heterojunctions between semiconductors and epitaxially grown crystalline oxides provide a rich setting in which built-in fields can be explored. Here, we present an electrical transport and hard X-ray photoelectron spectroscopy study of epitaxial SrNbxTi1-xO3-d / Si heterojunctions.

Lim, Zhenghui↗
DOE OSTI2018

Accurate band alignment at the amorphous Al 2 O 3 /p-Ge(100) interface determined by hard x-ray photoelectron spectroscopy and density functional theory

Here, we have investigated the band alignment at the interface of amorphous aluminum oxide (am-Al 2 O 3 ) grown by atomic layer deposition on p-Ge(100) and the effects of postgrowth annealing using hard x-ray photoelectron spectroscopy and density function theory (DFT). Accurate determination of the valence-band offsets was obtained by comparing the experimentally measured valence bands with DFT-calculated densities of states. The am-Al 2 O 3 density of states calculated from a weighted ensemble of crystalline Al 2 O 3 structures gives excellent agreement with experiment, sufficiently capturing the nonlinear shape of the valence-band edge. We report a valence-band offset of 2.60 ± 0.1 eV for am-Al 2 O 3 /p-Ge, which is reduced by 0.20 eV upon annealing as interfacial GeOx is formed.

47 OTHER INSTRUMENTATION↗
DOE OSTI2018

Experimental assignment of many-electron excitations in the photoionization of NiO

The absorption of a photon and the emission of an electron is not a simple, two-particle process. The complicated many-electron features observed during core photoionization can therefore reveal many of the hidden secrets about the ground and excited-state electronic structures of a material. Careful analysis of the photon-energy dependence of the Ni KLL Auger deexcitation spectra at and above the Ni 1s photoionization threshold has identified the satellite structure that appears in both the photoelectron emission and the x-ray absorption spectra of NiO as Ni metal 3d e g → Ni metal 3d e g and O ligand 2p e g → Ni metal 3d e g charge-transfer excitations, respectively. These assignments clarify the conflicting theoretical predictions of the last five decades in addition to other anomalous effects in the spectroscopy of this unique material.

36 MATERIALS SCIENCE↗
DOE OSTI2017

Reducing orbital occupancy in VO 2 suppresses Mott physics while Peierls distortions persist

The characteristics of the cooperative Mott-Peierls metal-insulator transition (MIT) of VO 2 can be altered by employing epitaxial strain. While the most commonly used substrate for this purpose is isostructural rutile TiO 2 , thin films often suffer from interdiffusion of Ti ions near the interface. Exploiting this phenomena, we investigate the nature of interfacial V 4+ /Ti 4+ cation intermixing and its effects on the MIT using scanning transmission electron microscopy with electron energy loss spectroscopy (STEM-EELS), soft x-ray absorption spectroscopy (XAS), and hard x-ray photoelectron spectroscopy (HAXPES), along with supporting density functional theory (DFT) calculations. We find that the reduced orbital occupancy in highly Ti incorporated VO 2 is responsible for suppressing the MIT. Interdiffused films are found to be metallic at all measured temperatures, despite a resolute dimerization inferred from x-ray absorption data at lower temperatures. Here our results demonstrate that the Mott physics can be suppressed in doped VO 2 , while a lattice dimerization remains thermodynamically favorable.

36 MATERIALS SCIENCE↗
DOE OSTI2016

Effect of Sr Content and Strain on Sr Surface Segregation of La 1– x Sr x Co 0.2 Fe 0.8 O 3-δ as Cathode Material for Solid Oxide Fuel Cells

Strontium doped lanthanum cobalt ferrite (LSCF) is a widely used cathode material due to its high electronic and ionic conductivity, and reasonable oxygen surface exchange coefficient. However, LSCF can have long-term stability issues such as surface segregation of Sr during solid oxide fuel cell (SOFC) operation, which can adversely affect the electrochemical performance. Thus, understanding the nature of the Sr surface segregation phenomenon, and how it is affected by the composition of LSCF and strain are critical. In this research, heteroepitaxial thin films of La 1-x Sr x Co 0.2 Fe 0.8 O 3 - with varying Sr content (x = 0.4, 0.3, 0.2) were deposited by pulsed laser deposition (PLD) on single crystal NdGaO 3 , SrTiO 3 and GdScO 3 substrates, leading to different levels of strain in the films. The extent of Sr segregation at the film surface was quantified using synchrotron-based total reflection x-ray fluorescence (TXRF), and atomic force microscopy (AFM). The electronic structure of the Sr-rich phases formed on the surface was investigated by hard X-ray photoelectron spectroscopy (HAXPES). The extent of Sr segregation was found to be a function of the Sr content in bulk. Lowering the Sr content from 40% to 30% reduced the surface segregation, but further lowering the Sr content to 20% increased the segregation. The strain of LSCF thin films on various substrates was measured using high-resolution x-ray diffraction (HRXRD) and the Sr surface segregation was found to be reduced with compressive strain and enhanced with tensile strain present within the thin films. A model was developed correlating the Sr surface segregation with Sr content and strain effects to explain the experimental results.

36 MATERIALS SCIENCE↗
DOE OSTI2016

Recent applications of hard x-ray photoelectron spectroscopy

Recent applications of hard x-ray photoelectron spectroscopy (HAXPES) demonstrate its many capabilities in addition to several of its limitations. Examples are given, including measurement of buried interfaces and materials under in situ or in operando conditions, as well as measurements under x-ray standing-wave and resonant excitation. Physical considerations that differentiate HAXPES from photoemission measurements utilizing soft x-ray and ultraviolet photon sources are also presented.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2015

Correlated rattling-ion origins of dielectric properties in reentrant dipole glasses BaTiO{sub 3}-BiScO{sub 3}

The local structure of the pseudo-cubic solid solution 0.6BaTiO{sub 3}-0.4BiScO{sub 3}, which exhibits reentrant dipole-glass behavior, has been determined using the Reverse Monte Carlo method to simultaneously fit (1) neutron and X-ray total scattering data (including the corresponding real-space pair-distribution functions), (2) Bi and Sc extended X-ray absorption fine structure, and (3) patterns of diffuse scattering in electron diffraction. These structural refinements revealed the multi-site probability density distributions for both Bi (14-sites) and Ti (8 sites), whereas Ba and Sc featured normal unimodal distributions. Bi atoms are displaced along both the 〈111〉 and 〈100〉 directions, while Ti atoms are shifted along 〈111〉. Correlated dynamic hopping of Bi and Ti over their corresponding split sites combined with chemical disorder is proposed as the origin of the strong frequency dispersion observed in dielectric measurements. The existence of split sites also explains the reentrant dipole-glass behavior reported for this system.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗