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Wood, William

Publications and source records attributed to Wood, William.

Enhancing the Conductivity and Thermoelectric Performance of Semicrystalline Conducting Polymers through Controlled Tie Chain Incorporation

Abstract Conjugated polymers are promising materials for thermoelectric applications, however, at present few effective and well‐understood strategies exist to further advance their thermoelectric performance. Here a new model system is reported for a better understanding of the key factors governing their thermoelectric properties: aligned, ribbon‐phase poly[2,5‐bis(3‐dodecylthiophen‐2‐yl)thieno[3,2‐b]thiophene] (PBTTT) doped by ion‐exchange doping. Using a range of microstructural and spectroscopic methods, the effect of controlled incorporation of tie‐chains between the crystalline domains is studied through blending of high and low molecular weight chains. The tie chains provide efficient transport pathways between crystalline domains and lead to significantly enhanced electrical conductivity of 4810 S cm −1 , which is not accompanied by a reduction in Seebeck coefficient or a large increase in thermal conductivity. Respectable power factors of 173 µW m −1 K −2 are demonstrated in this model system. The approach is generally applicable to a wide range of semicrystalline conjugated polymers and could provide an effective pathway for further enhancing their thermoelectric properties and overcome traditional trade‐offs in optimization of thermoelectric performance.

Chemistry↗

Charge transport in mixed metal halide perovskite semiconductors

Investigation of the inherent field-driven charge transport behaviour of three-dimensional lead halide perovskites has largely remained challenging, owing to undesirable ionic migration effects near room temperature and dipolar disorder instabilities prevalent specifically in methylammonium-and-lead-based high-performing three-dimensional perovskite compositions. Here, in this paper, we address both these challenges and demonstrate that field-effect transistors based on methylammonium-free, mixed metal (Pb/Sn) perovskite compositions do not suffer from ion migration effects as notably as their pure-Pb counterparts and reliably exhibit hysteresis-free p-type transport with a mobility reaching 5.4 cm 2 V –1 s -1 . The reduced ion migration is visualized through photoluminescence microscopy under bias and is manifested as an activated temperature dependence of the field-effect mobility with a low activation energy (~48 meV) consistent with the presence of the shallow defects present in these materials. An understanding of the long-range electronic charge transport in these inherently doped mixed metal halide perovskites will contribute immensely towards high-performance optoelectronic devices.

77 NANOSCIENCE AND NANOTECHNOLOGY↗

Observation of Weak Counterion Size Dependence of Thermoelectric Transport in Ion Exchange Doped Conducting Polymers Across a Wide Range of Conductivities

Conducting polymers are of interest for a broad range of applications from bioelectronics to thermoelectrics. The factors that govern their complex charge transport physics include the structural disorder present in these highly doped polymer films and the Coulombic interactions between the electronic charge carriers and the dopant counterions. Previous studies have shown that at low doping levels carriers are strongly trapped in the vicinity of the counterions, while at high doping levels charge transport is not limited by Coulombic trapping, which manifests itself in the conductivity being independent of the size of the dopant counterion. Here a recently developed ion exchange doping method is used to investigate the ion size dependence of a semicrystalline polythiophene–based model system across a wide range of conductivities. It is found that the regime in which the charge and thermoelectric transport is not or only weakly dependent on ion size, extends to surprisingly low conductivities. This surprising observation is explained by a heterogeneous doping that involves doping of the amorphous domains to high doping levels first before doping of the ordered, crystalline domains occurs. The study provides new insights into how the thermoelectric physics of conducting polymers evolves as a function of doping level.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Structural and Dynamic Disorder, Not Ionic Trapping, Controls Charge Transport in Highly Doped Conducting Polymers

Doped organic semiconductors are critical to emerging device applications, including thermoelectrics, bioelectronics, and neuromorphic computing devices. It is commonly assumed that low conductivities in these materials result primarily from charge trapping by the Coulomb potentials of the dopant counter-ions. Here, we present a combined experimental and theoretical study rebutting this belief. Using a newly developed doping technique, we find the conductivity of several classes of high-mobility conjugated polymers to be strongly correlated with paracrystalline disorder but poorly correlated with ionic size, suggesting that Coulomb traps do not limit transport. A general model for interacting electrons in highly doped polymers is proposed and carefully parameterized against atomistic calculations, enabling the calculation of electrical conductivity within the framework of transient localisation theory. Theoretical calculations are in excellent agreement with experimental data, providing insights into the disordered-limited nature of charge transport and suggesting new strategies to further improve conductivities.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Silicon-Carbide Power MOSFET Performance in High Efficiency Boost Power Processing Unit for Extreme Environments

Silicon-Carbide device technology has generated much interest in recent years. With superior thermal performance, power ratings and potential switching frequencies over its Silicon counterpart, Silicon-Carbide offers a greater possibility for high powered switching applications in extreme environment. In particular, Silicon-Carbide Metal-Oxide- Semiconductor Field-Effect Transistors' (MOSFETs) maturing process technology has produced a plethora of commercially available power dense, low on-state resistance devices capable of switching at high frequencies. A novel hard-switched power processing unit (PPU) is implemented utilizing Silicon-Carbide power devices. Accelerated life data is captured and assessed in conjunction with a damage accumulation model of gate oxide and drain-source junction lifetime to evaluate potential system performance at high temperature environments.

Ikpe, Stanley A.↗

Long-Term Reliability of a Hard-Switched Boost Power Processing Unit Utilizing SiC Power MOSFETs

Silicon carbide (SiC) power devices have demonstrated many performance advantages over their silicon (Si) counterparts. As the inherent material limitations of Si devices are being swiftly realized, wide-band-gap (WBG) materials such as SiC have become increasingly attractive for high power applications. In particular, SiC power metal oxide semiconductor field effect transistors' (MOSFETs) high breakdown field tolerance, superior thermal conductivity and low-resistivity drift regions make these devices an excellent candidate for power dense, low loss, high frequency switching applications in extreme environment conditions. In this paper, a novel power processing unit (PPU) architecture is proposed utilizing commercially available 4H-SiC power MOSFETs from CREE Inc. A multiphase straight boost converter topology is implemented to supply up to 10 kilowatts full-scale. High Temperature Gate Bias (HTGB) and High Temperature Reverse Bias (HTRB) characterization is performed to evaluate the long-term reliability of both the gate oxide and the body diode of the SiC components. Finally, susceptibility of the CREE SiC MOSFETs to damaging effects from heavy-ion radiation representative of the on-orbit galactic cosmic ray environment are explored. The results provide the baseline performance metrics of operation as well as demonstrate the feasibility of a hard-switched PPU in harsh environments.

Ikpe, Stanley A.↗

Assessment and Mission Planning Capability For Quantitative Aerothermodynamic Flight Measurements Using Remote Imaging

High resolution calibrated infrared imagery of vehicles during hypervelocity atmospheric entry or sustained hypersonic cruise has the potential to provide flight data on the distribution of surface temperature and the state of the airflow over the vehicle. In the early 1980 s NASA sought to obtain high spatial resolution infrared imagery of the Shuttle during entry. Despite mission execution with a technically rigorous pre-planning capability, the single airborne optical system for this attempt was considered developmental and the scientific return was marginal. In 2005 the Space Shuttle Program again sponsored an effort to obtain imagery of the Orbiter. Imaging requirements were targeted towards Shuttle ascent; companion requirements for entry did not exist. The engineering community was allowed to define observation goals and incrementally demonstrate key elements of a quantitative spatially resolved measurement capability over a series of flights. These imaging opportunities were extremely beneficial and clearly demonstrated capability to capture infrared imagery with mature and operational assets of the US Navy and the Missile Defense Agency. While successful, the usefulness of the imagery was, from an engineering perspective, limited. These limitations were mainly associated with uncertainties regarding operational aspects of data acquisition. These uncertainties, in turn, came about because of limited pre-flight mission planning capability, a poor understanding of several factors including the infrared signature of the Shuttle, optical hardware limitations, atmospheric effects and detector response characteristics. Operational details of sensor configuration such as detector integration time and tracking system algorithms were carried out ad hoc (best practices) which led to low probability of target acquisition and detector saturation. Leveraging from the qualified success during Return-to-Flight, the NASA Engineering and Safety Center sponsored an assessment study focused on increasing the probability of returning spatially resolved scientific/engineering thermal imagery. This paper provides an overview of the assessment task and the systematic approach designed to establish confidence in the ability of existing assets to reliably acquire, track and return global quantitative surface temperatures of the Shuttle during entry. A discussion of capability demonstration in support of a potential Shuttle boundary layer transition flight test is presented. Successful demonstration of a quantitative, spatially resolved, global temperature measurement on the proposed Shuttle boundary layer transition flight test could lead to potential future applications with hypersonic flight test programs within the USAF and DARPA along with flight test opportunities supporting NASA s project Constellation.

Horvath, Thomas↗

Computational Aerothermodynamic Assessment of Space Shuttle Orbiter Tile Damage: Open Cavities

Computational aerothermodynamic simulations of Orbiter windside tile damage in flight were performed in support of the Space Shuttle Return-to-Flight effort. The simulations were performed for both hypervelocity flight and low-enthalpy wind tunnel conditions and contributed to the Return-to-Flight program by providing information to support a variety of damage scenario analyses. Computations at flight conditions were performed at or very near the peak heating trajectory point for multiple damage scenarios involving damage windside acreage reaction cured glass (RCG) coated silica tile(s). The cavities formed by the missing tile examined in this study were relatively short leading to flow features which indicated open cavity behavior. Results of the computations indicated elevated heating bump factor levels predicted for flight over the predictions for wind tunnel conditions. The peak heating bump factors, defined as the local heating to a reference value upstream of the cavity, on the cavity floor for flight simulation were 67% larger than the peak wind tunnel simulation value. On the downstream face of the cavity the flight simulation values were 60% larger than the wind tunnel simulation values. On the outer mold line (OML) downstream of the cavity, the flight values are about 20% larger than the wind tunnel simulation values. The higher heating bump factors observed in the flight simulations were due to the larger driving potential in terms of energy entering the cavity for the flight simulations. This is evidenced by the larger rate of increase in the total enthalpy through the boundary layer prior to the cavity for the flight simulation.

Pulsonetti, Maria↗

(abstract) Monitoring Seasonal Change in Taiga Forests Using ERS-1 SAR Data

Sensitivity of radar backscatter to the dielectric and geometric character of forested regions suggests significant changes in backscatter are expected with season due to freezing temperatures, snow, wind, leaf fall, and drought. The first European Remote Sensing Satellite, ERS-1, offers a unique opportunity to monitor a complete seasonal cycle for the Alaskan taiga forest ecosystem with synthetic aperture radar. During the 3-day repeat Commissioning Phase of ERS-1, from August 1991to December 1991, ERS-1 SAR data were collected in the region of Manley Hot Springs, Alaska, along the Tanana River, west of Fairbanks. In parallel with the SAR data collection, meteorological data from three weather stations positioned in three forest stands were collected continuously along with in situ measurements of the dielectric and moisture properties of the canopy and of ground cover which were collected during each overflight. The in situ data were collected in floodplain forest stands dominated by balsam poplar, white spruce, and black spruce. These results from the Commissioning Phase as well as preliminary results from the 35-day Repeat Phase will be presented.

characteristics geometric characteristics moisture↗