Engineering topics
Wu, Ruqian (ORCID:0000000261567874)
Publications and source records attributed to Wu, Ruqian (ORCID:0000000261567874).
Persistent Chirality-Induced Spin-Selectivity Effect in Circular Helix Molecules
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Monte Carlo spin simulations of magnetic noise: The search for pivoting
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Controllable strain-driven topological phase transition and dominant surface-state transport in HfTe5
Abstract The fine-tuning of topologically protected states in quantum materials holds great promise for novel electronic devices. However, there are limited methods that allow for the controlled and efficient modulation of the crystal lattice while simultaneously monitoring the changes in the electronic structure within a single sample. Here, we apply significant and controllable strain to high-quality HfTe 5 samples and perform electrical transport measurements to reveal the topological phase transition from a weak topological insulator phase to a strong topological insulator phase. After applying high strain to HfTe 5 and converting it into a strong topological insulator, we found that the resistivity of the sample increased by 190,500% and that the electronic transport was dominated by the topological surface states at cryogenic temperatures. Our results demonstrate the suitability of HfTe 5 as a material for engineering topological properties, with the potential to generalize this approach to study topological phase transitions in van der Waals materials and heterostructures.
Pressure-induced switching between topological phases in magnetic van der Waals heterostructures
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Research on the mechanism of interactions between Li/Na/K atoms and electrode materials
As the demand for high-capacity battery materials continues to grow, the exploration of the interaction mechanisms between Li/Na/K atoms and electrode materials has gained tremendous attention. In this study, we introduce a descriptor (ɛɑ) aimed at efficiently identifying high-performance electrode materials, specifically from two-dimensional transition metal chalcogenides and C and N compounds (MXenes). Our density functional theory calculations disclose a robust linear relationship between this descriptor and the adsorption energy (Ead), represented as Ead = ɛɑ + b. The fitting parameters, ɛɑ and b, are individually linked to the inherent properties of the substrate and adsorbate. Explicitly, the descriptor ɛɑ represents the capacity of the electrode material to accommodate an extra electron, while the intercept b is determined by the ionization energy (EIP) of alkali atoms and the coupling energy (Ecp) between the cation to the negatively charged substrate. This finding serves as a practical guide for designing high-capacity battery materials and paves the way for future advancements in this field.
Ferroelectrics and photovoltaics in endohedral fullerenes-based van der Waals heterostructures
Using the density functional theory calculations, we studied the ferroelectric, electronic, and optical properties of a series of bias-controllable endohedral fullerene molecules (TM@C28, TM = Ti-Ni). One important finding is that Cr@C28 has a large electric dipole moment and an appropriate bandgap (∼1.2 eV). By sandwiching Cr@C28 molecules between two graphene or transition metal dichalcogenide layers, the heterostructures may combine strong ferroelectricity and excellent optical properties. This paves the way for the development of two-dimensional van der Waals ferroelectric-photovoltaic materials.
Nanodevices engineering and spin transport properties of MnBi2Te4 monolayer
Abstract Two-dimensional (2D) magnetic materials are essential for the development of the next-generation spintronic technologies. Recently, layered van der Waals (vdW) compound MnBi 2 Te 4 (MBT) has attracted great interest, and its 2D structure has been reported to host coexisting magnetism and topology. Here, we design several conceptual nanodevices based on MBT monolayer (MBT-ML) and reveal their spin-dependent transport properties by means of the first-principles calculations. The pn -junction diodes and sub-3-nm pin -junction field-effect transistors (FETs) show a strong rectifying effect and a spin filtering effect, with an ideality factor n close to 1 even at a reasonably high temperature. In addition, the pip - and nin -junction FETs give an interesting negative differential resistive (NDR) effect. The gate voltages can tune currents through these FETs in a large range. Furthermore, the MBT-ML has a strong response to light. Our results uncover the multifunctional nature of MBT-ML, pave the road for its applications in diverse next-generation semiconductor spin electric devices.