Engineering topics
Xi, Jianqi
Publications and source records attributed to Xi, Jianqi.
Atomistic simulations of He bubbles in Beryllium
Formation of He bubbles can have a significant effect on the microstructural evolution and properties of irradiated materials. In this report, we use atomistic simulations based on machine learning potentials to investigate the fundamental behavior of He bubbles in Be, with a specific focus on the shape, stability, and diffusivity of bubbles. Stability of He bubbles is quantified in terms of formation energies, which are determined as a function of the ratio of He/V. We find that He bubbles become unstable with respect to plastic deformation through punch-out dislocations around the bubble when the He/V ratio is larger than ~1.25, and the punch-out process induces the change of the regular bubble shape. In general, the bubble shape of He in Be is found to be ellipsoid-like. It is also found that for a fixed He/V ratio, the bubble attracts vacancies to become larger in size. If the bubble size is constant, the bubble attracts additional He atoms until the punch-out reaction occurs. The dominant diffusion mechanism of He bubbles changes from surface diffusion to volume diffusion as the temperature is increased, with a crossover occurring at about 900 K.
Control of Surface Chemical Reactions through Solid Stiffness
Control of surface reactions is commonly achieved by modification of surface electronic structures. Here, we discover an alternative pathway for controlling surface reactions by tuning the mechanical stiffness of the underlying material. We find that in addition to the typically assumed surface electronic contribution right at the reactive site, the contribution from the deformation of the bulk region plays a vital role in controlling surface reactions. The underlying mechanism is an elastic relaxation of the solid, which depends on the material’s stiffness and can be modified by tuning bulk stoichiometry. The effect of bulk stiffness on surface reactions has been demonstrated by considering hydrogen scission reaction and oxygen incorporation reaction during corrosion of amorphous SiC in water and air, respectively. Finally, our results imply that tuning of bulk stiffness by modifying stoichiometry can provide an effective method for controlling surface reactions.
Defect recovery processes in Cr-B binary and Cr-Al-B MAB phases: structure-dependent radiation tolerance
Not Available
Defect chemistry of Cr-B binary and Cr-Al-B MAB phases: Effects of covalently bonded B networks
Transition metal borides, which are three-dimensional (3D) layered materials containing covalently bonded B networks, have shown a number of excellent properties, such as radiation resistance and the ability to act as a diffusion barrier in integrated circuits. However, defect behavior, which controls many of the materials’ properties, has remained unknown in these materials. In this work, we investigate the effects of the B networks on the defect chemistry in both binary borides (CrB, Cr 3 B 4 , Cr 2 B 3 ) and ternary MAB phases (Cr 2 AlB 2 , Cr 3 AlB 4 , Cr 4 AlB 6 ) using first-principles calculations. We find that increasing the number of B rings in the structure leads to lower formation energies and higher concentrations of Frenkel pairs. The results can be explained by the fact that the strongest Cr-B bond is weakened when borides have more B rings, leading to a reduction in the formation energy of Cr and B vacancies. Also, the bonds associated with Cr atoms bonded within B rings are softer in structures containing more B rings, which allows Cr interstitials to form with a lower energy cost and contributes to an increase in the concentration of Cr interstitials.
Enhancing the phase stability of ceramics under radiation via multilayer engineering
This study provides a strategy to improve the phase stability of ceramic material under radiation through interface engineering.
Deciphering water-solid reactions during hydrothermal corrosion of SiC
Not provided.
Defect behavior and radiation tolerance of MAB phases (MoAlB and Fe2AlB2) with comparison to MAX phases
MAB phases are a new class of layered ternary materials that have already shown a number of outstanding properties. Here, we investigate defect evolution and radiation tolerance of two MAB phases, MoAlB and Fe 2 AlB 2 , using a combination of experimental characterization and first-principles calculations. We find that Fe 2 AlB 2 is more tolerant to radiation-induced amorphization than MoAlB, both at 150 °C and at 300 °C. The results can be explained by the fact that the Mo Frenkel pair is unstable in MoAlB and as a result, irradiated MoAlB is expected to have a significant concentration of Mo Al antisites, which are difficult to anneal even at 300 °C. We find that the tolerance to radiation-induced amorphization of MAB phases is lower than in MAX phases, but it is comparable to that of SiC. However, MAB phases do not show radiation-induced cracking which is observed in MAX phases under the same irradiation conditions. This research suggests that MAB phases might be a promising class of materials for applications that involve radiation.
High toughness carbon-nanotube-reinforced ceramics via ion-beam engineering of interfaces
Not Available
Effects of point defects on oxidation of 3C–SiC
The influence of implantation-induced point defects (PDs) on SiC oxidation is investigated via molecular dynamics simulations. PDs generally increase the oxidation rate of crystalline grains. Particularly, accelerations caused by Si antisites and vacancies are comparable, and followed by Si interstitials, which are higher than those by C antisites and C interstitials. However, in the grain boundary (GB) region, defect contribution to oxidation is more complex, with C antisites decelerating oxidation. Here, the underlying reason is the formation of a C-rich region along the oxygen diffusion pathway that blocks the access of O to Si and thus reduces the oxidation rate, as compared to the oxidation along a GB without defects.
An Unexpected Role of H During SiC Corrosion in Water
During aqueous corrosion, atoms in the solid react chemically with oxygen, leading either to the formation of an oxide film or to the dissolution of the host material. Commonly, the first step in corrosion involves an oxygen atom from the dissociated water that reacts with the surface atoms and breaks near-surface bonds. In contrast, hydrogen on the surface often functions as a passivating species. Here, we discovered that the roles of O and H are reversed in the early corrosion stages on a Si-terminated SiC surface. O forms stable species on the surface, and chemical attack occurs by H that breaks the Si–C bonds. Here, this so-called hydrogen scission reaction is enabled by a newly discovered metastable bridging hydroxyl group that can form during water dissociation. The Si atom that is displaced from the surface during water attack subsequently forms H 2 SiO 3 , which is a known precursor to the formation of silica and silicic acid. This study suggests that the roles of H and O in oxidation need to be reconsidered.