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Xiang, Xia

Publications and source records attributed to Xiang, Xia.

Electrostatic Asymmetry of Wurtzite Nanocrystals and Resulting Photocatalytic Properties

Efficient light absorption and high energy of charge carriers of zinc cadmium sulfide (ZCS) make this semiconductor attractive for many photocatalytic reactions. Despite marked successes in shape-controlled synthesis of ZCS central to their photocatalytic performance, recombination of charge carriers as they migrate through the nanoscale particles results in losses of excitation energy, markedly reducing the photocatalytic activity of ZCS and other heterogeneous photocatalysts. Here, in this study, we show that the electrostatic asymmetry of nanostructures, previously discovered for nearly spherical nanoparticles, also manifests in wurtzite ZCS with planar geometry. The electrostatic asymmetry assists charge separation and substantially increases the yield of photocatalytic reactions in monocrystalline ZCS. The synthesized ZCS nanorods and nanoplates with identical chemical composition were found to have markedly different photocatalytic activity for evolution of hydrogen in water. Despite much smaller specific surface areas, the ~500 nm wide nanoplates displayed a hydrogen evolution rate 12 times higher than the ~35 nm long nanorods, also outperforming other ZCS photocatalysts. Experimental and computational data indicate that the homo- and heterojunction-free ZCS nanoplates with continuous wurtzite lattice behave essentially as nanoscale dipoles with intrinsic dipole moment as high as 48.39 D per unit cell. Electric-field-directed migration of charge carriers stimulates their localization on opposite parts of the nanoplates. Direct imaging of the intraparticle electrical field using off-axis electron holography confirmed their electrostatic asymmetry. Polarization-enhanced charge separation provides a new pathway to efficient and stable photocatalysts for sustainable energy technologies.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Theory of suppressing avalanche process of carrier in short pulse laser irradiated dielectrics

A theory for controlling avalanche process of carrier during short pulse laser irradiation is proposed. We show that avalanche process of conduction band electrons (CBEs) is determined by the occupation number of phonons in dielectrics. The theory provides a way to suppress avalanche process and a direct judgment for the contribution of avalanche process and photon ionization process to the generation of CBEs. The obtained temperature dependent rate equation shows that the laser induced damage threshold of dielectrics, e.g., fused silica, increase nonlinearly with the decreases of temperature. Present theory predicts a new approach to improve the laser induced damage threshold of dielectrics.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Nonlinear luminescence response of CaF{sub 2}:Eu and YAlO{sub 3}:Ce to single-ion excitation

Understanding scintillation physics and nonproportionality is essential to accelerate materials discovery that has been restricted due to the difficulties inherent to large crystal growth and complex nature of gamma-solid interaction. Taking advantage of less restrictive growth and deposition techniques for smaller crystal sizes or thin films and better fundamental understanding of ion-solid interactions, a unique ion approach is demonstrated to effectively screen candidate scintillators with relatively small size and evaluate their nonlinear scintillation response. Response of CaF{sub 2}:Eu and YAlO{sub 3}:Ce scintillators to single ions of H{sup +}, He{sup +}, and O{sup 3+} are measured by the corresponding pulse height over a continuous energy range using a time-of-flight–scintillator–photoelectric multiplier tube apparatus. Nonlinear response of the scintillators under ionizing ion irradiation is quantitatively evaluated by considering the energy partitioning process. In a differential energy deposition region with negligible displacement damage, the low, medium and high excitation energy deposition density (D{sub exci}) can be produced by energetic H{sup +}, He{sup +} and O{sup 3+} ions, respectively, and significantly different impacts on the response characteristics of these two benchmark scintillators are observed. For CaF{sub 2}:Eu, the scintillation efficiency under ion irradiation monotonically decreases with increasing excitation-energy density. In contrast, the response efficiency of YAlO{sub 3}:Ce scintillation initially increases with excitation-energy density at low excitation-energy densities, goes through a maximum, and then decreases with further increasing excitation-energy density. The fundamental mechanism causing these different response behaviours in the scintillators is based on the competition between the scintillation response and the nonradiative quenching process under different excitation densities, which is also the main origin of the nonlinear response of the scintillators to irradiation.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Theory of absorption rate of carriers in fused silica under intense laser irradiation

A quantum non-perturbation theory for phonon-assisted photon absorption of conduction band electron in intense laser was developed. By carrying out the calculation in fused silica at wavelengths from ultraviolet to infrared in terawatt intensity laser, we show that the Non-perturbation approach can make a uniform description of energy absorption rate at both short wavelengths and long wavelengths on TW / cm2 intensity laser.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗

Damage evolution in Au-implanted Ho2Ti2O7 titanate pyrochlore

Damage evolution at room temperature in Ho2Ti2O7 single crystals is studied under 1 MeV Au2+ ion irradiation by Rutherford backscattering spectroscopy along the <001> direction. For a better determination of ion-induced disorder profile, an iterative procedure and a Monte Carlo code (McChasy) were used to analyze ion channeling spectra. A disorder accumulation model, with contributions from the amorphous fraction and the crystalline disorder, is fit to the Ho damage accumulation data. The damage evolution behavior indicates that the relative disorder on the Ho sublattice follows a nonlinear dependence on dose and that defect-stimulated amorphization is the primary amorphization mechanism. Similar irradiation behavior previously was observed in Sm2Ti2O7. A slower damage accumulation rate for Ho2Ti2O7, as compared with damage evolution in Sm2Ti2O7, is mainly attributed to a lower effective cross section for defect-simulated amorphization.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗