Probing charge trapping of high k dielectric stacks under ionizing radiation
Presentation for Rio Grande Symposium on Advanced Materials on Ocotber 21st
Engineering topics
Publications and source records attributed to Xiong, Jenny.
Presentation for Rio Grande Symposium on Advanced Materials on Ocotber 21st
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This abstract presents a comprehensive analysis of total ionizing dose (TID) response in GlobalFoundries’ 12LP 12nm bulk FinFET technology using 10keV X-rays. Devices with higher threshold voltages (VTs) demonstrated lower increases in off-state leakage current (IDS,OFF) post-irradiation, highlighting the mitigating role of high VT in TID response. Our data shows that transistors with fewer fins exhibit superior TID resistance, implying lower susceptibility to radiation effects. Our study also probed two bias conditions, "Gate-On" and "Pass-Gate," with the former displaying more severe TID degradation. Interestingly, p-type devices displayed negligible degradation, underscoring their inherent resilience to TID effects. Additionally, medium thick n-type devices echoed the fin-count-dependent TID response observed in other transistor types, further strengthening our findings. These results underscore the importance of strategic transistor selection and design for enhancing the TID resilience of future CMOS FinFET architectures, particularly critical in radiation-intense environments.
During this LDRD project, our team developed a technology which enables the fabrication of novel nanostructures replicating seashell – “nature’s toughest material”. The resulting coatings exhibit high thermal stability up to 1650°C, which exceeds the hardness of Spectra® by ~44%, as well as the compressive strength of aluminum by ~57%. Coatings made with this technology are stronger, environmentally friendly, more sustainable, and more versatile than other comparable materials. Beryllium wafers, the current, most favorable shielding material in terms of thermal and mechanical properties, are very toxic and cost hundreds of times more than the new material developed in this project. The coatings on silicon wafer and stainless steel, respectively, have been tested as ride-along on the Z machine and clearly outperform the bare substrate. Use of this technology will have a profound global impact for pulsed power and fusion energy development, debris mitigation for spacecraft and satellites, durability of drill bits used in deep well drilling and tunnel boring operations, thermal protection of aircraft and manned spacecraft, and various other thermal and mechanical protection applications.
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Abstract not provided.