Ex situ bismuth doping for efficient CdSeTe thin-film solar cells with open-circuit voltages exceeding 900 mV
We dope CdTe solar cells with Bi after the device structure is completed using a solution process.
CdTe solar cell↗
Engineering topics
Yan, Feng
Publications and source records attributed to Yan, Feng.
Antisolvent‐Mediated Air Quench for High‐Efficiency Air‐Processed Carbon‐Based Planar Perovskite Solar Cells
Perovskite solar cells (PSCs) have becoma a leading low‐cost photovoltaic technology, achieving power conversion efficiencies (PCEs) of up to 26.1%. However, their commercialization is hindered by stability issues and the need for controlled processing environments. Carbon‐electrode‐based PSCs (C‐PSCs) offer enhanced stability and cost‐effectiveness compared to traditional metal‐electrode PSCs, i.e., Au and Ag. However, processing challenges persist, particularly in air conditions where moisture sensitivity poses a significant hurdle. Herein, a novel air processing technique is presented for planar C‐PSCs that incorporates antisolvent vapors, such as chlorobenzene, into a controlled air‐quenching process. This method effectively mitigates moisture‐induced instability, resulting in champion PCEs exceeding 20% and robust stability under ambient conditions. The approach retains 80% of initial efficiency after 30 h of operation at maximum power point without encapsulation. This antisolvent‐mediated air‐quenching technique represents a significant advancement in the scalable production of C‐PSCs, paving the way for future large‐scale deployment.
14 SOLAR ENERGY↗
Double Perovskite Interlayer Stabilized Highly Efficient Perovskite Solar Cells
Metal halide perovskite solar cell (PSC) technology has an impressive power conversion efficiency (PCE) exceeding 26.1% and demonstrates cost-effective manufacturing. However, the stability of these PSCs poses a significant challenge, hindering their widespread manufacturing and commercialization. To tackle the degradation issue inherent in PSCs, surface passivation techniques, particularly employing a thin layer of two-dimensional (2D) perovskites, create a 2D/3D heterostructure. Beyond this, the exploration of metal halide double perovskites adds a new dimension to the chemical and band gap phase space of materials for optoelectronic applications. In this study, we leverage a wide band gap double perovskite interlayer to enhance the stability of 3D metal halide perovskite. Specifically, the double perovskite nanoparticle Cs 2 AgBiBr 6 , with its substantial band gap of 2.2 eV and exceptional air stability, is utilized. Through optimization, a Cs 2 AgBiBr 6 -treated PSC achieves an open-circuit voltage of 1.12 V and an impressive PCE of 19.52%. Additionally, the Cs 2 AgBiBr 6 passivation layer proves to be effective in bolstering the stability of PSCs. This work demonstrates an additional strategy and design motif to simultaneously increase the PCE of PSCs along with achieving improved stability.
14 SOLAR ENERGY↗
Use of carbon electrodes to reduce mobile ion concentration and improve reliability of metal halide perovskite photovoltaics
Ion migration is one of the prime reasons for the rapid degradation of metal halide perovskite solar cells (PSCs), and we report on a method for quantifying mobile ion concentration (No) using a transient dark current measurement. We perform both ex-situ and in-situ measurements on PSCs and study the evolution of No in films and devices under a range of temperatures. We also study the effect of device architecture, top electrode chemistry, and metal halide perovskite composition and dimensionality on No. Two-dimensional perovskites are shown to reduce the ion concentration along with inert C electrodes that do not react with halides by ~99% while also improving mechanical reliability by ~250%. We believe this work can provide design guidelines for the development of stable PSCs through the lens of minimizing mobile ions and their evolution over time under operational conditions.
14 SOLAR ENERGY↗
AlGaN Ultraviolet Detectors for Dual-Band UV Detection
This innovation comprises technology that has the ability to measure at least two ultraviolet (UV) bands using one detector without relying on any external optical filters. This allows users to build a miniature UVA and UVB monitor, as well as to develop compact, multicolor imaging technologies for flame temperature sensing, air-quality control, and terrestrial/counter-camouflage/biosensing applications.
Miko, Laddawan↗
Bias Selectable Dual Band AlGaN Ultra-violet Detectors
Bias selectable dual band AlGaN ultra-violet (UV) detectors, which can separate UV-A and UV-B using one detector in the same pixel by bias switching, have been designed, fabricated and characterized. A two-terminal n-p-n photo-transistor-like structure was used. When a forward bias is applied between the top electrode and the bottom electrode, the detectors can successfully detect W-A and reject UV-B. Under reverse bias, they can detect UV-B and reject UV-A. The proof of concept design shows that it is feasible to fabricate high performance dual-band UV detectors based on the current AlGaN material growth and fabrication technologies.
Yan, Feng↗
SiC-based Photo-detectors for UV, VUV, EUV and Soft X-ray Detection
A viewgraph presentation describing an ideal Silicon Carbide detector for ultraviolet, vacuum ultraviolet, extreme ultraviolet and soft x-ray detection is shown. The topics include: 1) An ideal photo-detector; 2) Dark current density of SiC photodiodes at room temperature; 3) Dark current in SiC detectors; 4) Resistive and capacitive feedback trans-impedance amplifier; 5) Avalanche gain; 6) Excess noise; 7) SNR in single photon counting mode; 8) Structure of SiC single photon counting APD and testing structure; 9) Single photon counting waveform and testing circuit; 10) Amplitude of SiC single photon counter; 11) Dark count of SiC APD photon counters; 12) Temperature-dependence of dark count rate; 13) Reduce the dark count rate by reducing the breakdown electric field; 14) Spectrum range for SiC detectors; 15) QE curves of Pt/4H-SiC photodiodes; 16) QE curve of SiC; 17) QE curves of SiC photodiode vs. penetration depth; 18) Visible rejection of SiC photodiodes; 19) Advantages of SiC photodiodes; 20) Competitors of SiC detectors; 21) Extraterrestrial solar spectra; 22) Visible-blind EUV detection; 23) Terrestrial solar spectra; and 24) Less than 1KeV soft x-ray detection.
Yan, Feng↗
Demonstration of the First 4H-SiC EUV Detector with Large Detection Area
Ultraviolet (UV) and Extreme Ultraviolet (EUV) detectors are very attractive in astronomy, photolithography and biochemical applications. For EUV applications, most of the semiconductor detectors based on PN or PIN structures suffer from the very short penetration depth. Most of the carries are absorbed at the surface and recombined there due to the high surface recombination before reach the depletion region, resulting very low quantum efficiency. On the other hand, for Schottky structures, the active region starts from the surface and carriers generated from the surface can be efficiently collected. 4H-Sic has a bandgap of 3.26eV and is immune to visible light background noise. Also, 4H-Sic detectors usually have very good radiation hardness and very low noise, which is very important for space applications where the signal is very weak. The E W photodiodes presented in this paper are based on Schottky structures. Platinum (Pt) and Nickel (Ni) are selected as the Schottky contact metals, which have the highest electron work functions (5.65eV and 5.15eV, respectively) among all the known metals on 4H-Sic.
Xin, Xiaobin↗
Development of Ultra-High Sensivity Silicon Carbide Detectors
A variety of silicon carbide (SiC) detectors have been developed to study the sensitivity of SiC ultraviolet (UV) detectors, including Schottky photodiodes, p-i-n photodiodes, avalanche photodiodes (APDs), and single photon-counting APDs. Due to the very wide bandgap and thus extremely low leakage current, Sic photo-detectors showed excellent sensitivity. The specific detectivity, D*, of SiC photodiodes are orders of magnitude higher than that of their competitors, such as Si photodiodes, and comparable to the D* of photomultiplier tubes (PMTs). To pursue the ultimate detection sensitivity, SiC APDs and single photon-counting avalanche diodes (SPADs) have also been fabricated. By operating the SiC APDs at a linear mode gain over 10(exp 6), SPADs in UV have been demonstrated. SiC UV detectors have great potential for use in solar blind UV detection and biosensing. Moreover, SiC detectors have excellent radiation hardness and high temperature tolerance which makes them ideal for extreme environment applications such as in space or on the surface of the Moon or Mars.
Yan, Feng↗
4H-SiC UV Photo Detector with Large Area and Very High Specific Detectivity
Pt/4H-SiC Schottky photodiodes have been fabricated with the device areas up to 1 sq cm. The I-V characteristics and photo-response spectra have been measured and analyzed. For a 5 mm x 5 mm area device leakage current of 1 x 10(exp 15)A at zero bias and 1.2 x 10(exp 14)A at -IV have been established. The quantum efficiency is over 30% from 240nm to 320nm. The specific detectivity, D(sup *), has been calculated from the directly measured leakage current and quantum efficiency data and are shown to be higher than 10(exp 15) cmHz(sup 1/2)/W from 210nm to 350nm with a peak D(sup *) of 3.6 x 10(exp 15)cmH(sup 1/2)/W at 300nm.
Yan, Feng↗