Low-background InSb array development
Photovoltaic indium antimonide (PV InSb) detector technology has matured over the past several years to enable a wide variety of applications to use this high-performance detector material to advantage. The operating conditions for most of the applications to date for back-side illuminated PV InSb arrays have encompassed focal plane temperatures ranging from 40 to approximately 95 K, with the majority in the narrower range between 60 and 80 K. Background flux conditions have ranged from 10 to the 10th power ph/sq cm/sec to 10 to the 16th power ph/sq cm/sec, most typically between 10 to the 12th power and 10 to the 14th power ph/sq cm/sec. Appropriately, the array parameters were optimized for maximum performance over these temperature and background ranges. The key parameters which were peaked in this process were the resistance-area product of the detectors and their quantum efficiency. The Space Infrared Telescope Facility (SIRTF) Infrared Array Camera requirements, however, present very low temperature and background operating conditions, plus the need for very high signal to noise ratios. Preliminary analysis indicates that back-side illuminated PV InSb arrays can be optimized for operation under these conditions, and some performance projections will be presented.