Engineering topics
Publications and source records attributed to Yang, Chan-Lon.
New configurations proposed for quantum-well devices. Simplifies alignment, increases sensitivity, and opens up more possibilities in design of quantum-well detectors of infrared radiation. In detector made according to proposed concept, light incident broadside on front surface absorbed. No special waveguide structures required.
The infrared intersubband absorption process in quantum well systems with anisotropic bulk effective masses, which usually occurs in indirect semiconductors was analyzed. It is found that the anisotropic effective mass can be utilized to provide allowed intersubband transitions at normal incidence to the quantum well growth direction. This transition is known to be forbidden for cases of isotropic effective mass. This property can be exploited for infrared sensor application of quantum well structures by allowing direct illumination of large surface areas without using special waveguide structures. The 10-micron intersubband absorption in quantum wells made of the silicon-based system Si/Si(1-x)Ge(x) was calculated. It is found that it is readily possible to achieve an absorption constant of the order of 10,000/cm in these Si quantum wells with current doping technology.