Engineering topics

Yang, Eui-Hyeok

Publications and source records attributed to Yang, Eui-Hyeok.

25 records · Page 2

NASA NTRS2003

Miniature Inchworm Actuators Fabricated by Use of LIGA

Miniature inchworm actuators that would have relatively simple designs have been proposed for applications in which there are requirements for displacements of the order of microns or tens of microns and for the ability to hold their positions when electric power is not applied. The proposed actuators would be members of the class of microelectromechanical systems (MEMS), but would be designed and fabricated following an approach that is somewhat unusual for MEMS. Like other MEMS actuators, the proposed inchworm actuators could utilize thermoplastic, bimetallic, shape-memory-alloy, or piezoelectric actuation principles. The figure depicts a piezoelectric inchworm actuator according to the proposal. As in other inchworm actuators, linear motion of an extensible member would be achieved by lengthening and shortening the extensible member in synchronism with alternately clamping and releasing one and then the other end of the member. In this case, the moving member would be the middle one; the member would be piezoelectric and would be shortened by applying a voltage to it. The two outer members would also be piezoelectric; the release of the clamps on the upper or lower end would be achieved by applying a voltage to the electrodes on the upper or lower ends, respectively, of these members. Usually, MEMS actuators cannot be fabricated directly on the side walls of silicon wafers, yet the geometry of this actuator necessitates such fabrication. The solution, according to the proposal, would be to use the microfabrication technique known by the German acronym LIGA - "lithographie, galvanoformung, abformung," which means lithography, electroforming, molding. LIGA involves x-ray lithography of a polymer film followed by selective removal of material to form a three-dimensional pattern from which a mold is made. Among the advantages of LIGA for this purpose are that it is applicable to a broad range of materials, can be used to implement a variety of designs, including those of structures >1 mm high, affords submicron precision, and is amenable to mass production at relatively low unit cost. Fabrication of the proposed actuators would involve some technological risks - in particular, in the integration of electrode connection lines and placement of actuator elements. It will also be necessary to perform an intensive study of the feasibility of growing piezoelectric crystals onto LIGA molds.

Yang, Eui-Hyeok↗

NASA NTRS2003

A Reactive-Ion Etch for Patterning Piezoelectric Thin Film

Reactive-ion etching (RIE) under conditions described below has been found to be a suitable means for patterning piezoelectric thin films made from such materials as PbZr(1-x)Ti(x)O3 or Ba(x)Sr(1.x)TiO3. In the original application for which this particular RIE process was developed, PbZr(1-x)Ti(x)O3 films 0.5 microns thick are to be sandwiched between Pt electrode layers 0.1 microns thick and Ir electrode layers 0.1 microns thick to form piezoelectric capacitor structures. Such structures are typical of piezoelectric actuators in advanced microelectromechanical systems now under development or planned to be developed in the near future. RIE of PbZr(1-x)Ti(x)O3 is usually considered to involve two major subprocesses: an ion-assisted- etching reaction, and a sputtering subprocess that removes reactive byproducts. RIE is favored over other etching techniques because it offers a potential for a high degree of anisotropy, high-resolution pattern definition, and good process control. However, conventional RIE is not ideal for patterning PbZr(1-x)Ti(x)O3 films at a thickness as great as that in the original intended application. In order to realize the potential benefits mentioned above, it is necessary to optimize process conditions . in particular, the composition of the etching gas and the values of such other process parameters as radio-frequency power, gas pressure, gas-flow rate, and duration of the process. Guidelines for determining optimum conditions can be obtained from experimental determination of etch rates as functions of these parameters. Etch-gas mixtures of BCl3 and Cl2, some also including Ar, have been found to offer a high degree of selectivity as needed for patterning of PbZr(1-x)Ti(x)O3 films on top of Ir electrode layers in thin-film capacitor structures. The selectivity is characterized by a ratio of approx.10:1 (rate of etching PbZr(1-x)Ti(x)O3 divided by rate of etching Ir and IrO(x)). At the time of reporting the information for this article, several experiments on RIE in BCl3 and Cl2 (and sometimes Ar) had demonstrated the 10:1 selectivity ratio, and further experiments to enhance understanding and obtain further guidance for optimizing process conditions were planned.

Yang, Eui-Hyeok↗

NASA NTRS2003

Silicon Membrane Mirrors with Electrostatic Shape Actuators

Efforts are under way to develop deformable mirrors equipped with microscopic electrostatic actuators that would be used to maintain their reflective surfaces in precise shapes required for their intended applications. Unlike actuators that depend on properties of materials (e.g., piezoelectric and electrostrictive actuators), electrostatic actuators are effective over a wide temperature range. A mirror of the present type would be denoted a MEMSDM (for microelectromechanical system deformable mirror). The reflective surface of such a mirror would be formed on a single-crystal silicon membrane that would be attached by posts to a silicon actuator membrane that would, in turn, be attached by posts to a rigid silicon base (see figure). The actuator membrane would serve as the upper electrode of a capacitor. Multiple lower electrodes, each occupying a conveniently small fraction of the total area, would be formed on an electrically insulating oxide layer on the base, thereby defining a multiplicity of actuator pixels. The actuator membrane would be corrugated in a pattern that would impart mechanical compliance needed for relaxation of operational and fabrication-induced stresses and to minimize the degree of nonlinearity of deformations. The compliance afforded by the corrugations would also help to minimize the undesired coupling of deformations between adjacent pixels (a practical goal being to keep the influence coefficient between adjacent pixels below 10 percent).

Yang, Eui-Hyeok↗

NASA NTRS2003

Micro-Ball-Lens Optical Switch Driven by SMA Actuator

The figure is a simplified cross section of a microscopic optical switch that was partially developed at the time of reporting the information for this article. In a fully developed version, light would be coupled from an input optical fiber to one of two side-by-side output optical fibers. The optical connection between the input and the selected output fiber would be made via a microscopic ball lens. Switching of the optical connection from one output fiber to another would be effected by using a pair of thin-film shape-memory-alloy (SMA) actuators to toggle the lens between two resting switch positions. There are many optical switches some made of macroscopic parts by conventional fabrication techniques and some that are microfabricated and, hence, belong to the class of microelectromechanical systems (MEMS). Conventionally fabricated optical switches tend to be expensive. MEMS switches can be mass-produced at relatively low cost, but their attractiveness has been diminished by the fact that, heretofore, MEMS switches have usually been found to exhibit high insertion losses. The present switch is intended to serve as a prototype of low-loss MEMS switches. In addition, this is the first reported SMA-based optical switch. The optical fibers would be held in V grooves in a silicon frame. The lens would have a diameter of 1 m; it would be held by, and positioned between, the SMA actuators, which would be made of thin films of TiNi alloy. Although the SMA actuators are depicted here as having simple shapes for the sake of clarity of illustration, the real actuators would have complex, partly net-like shapes. With the exception of the lens and the optical fibers, the SMA actuators and other components of the switch would be made by microfabrication techniques. The components would be assembled into a sandwich structure to complete the fabrication of the switch. To effect switching, an electric current would be passed through one of the SMA actuators to heat it above its transition temperature, thereby causing it to deform to a different "remembered" shape. The two SMA actuators would be stiff enough that once switching had taken place and the electrical current was turned off, the lens would remain latched in the most recently selected position. In a test, the partially developed switch exhibited an insertion loss of only -1.9 dB and a switching contrast of 70 dB. One the basis of prior research on SMA actuators and assuming a lens displacement of 125 m between extreme positions, it has been estimated that the fully developed switch would be capable of operating at a frequency as high as 10 Hz.

Yang, Eui-Hyeok↗

NASA NTRS2003

Wafer-Level Membrane-Transfer Process for Fabricating MEMS

A process for transferring an entire wafer-level micromachined silicon structure for mating with and bonding to another such structure has been devised. This process is intended especially for use in wafer-level integration of microelectromechanical systems (MEMS) that have been fabricated on dissimilar substrates. Unlike in some older membrane-transfer processes, there is no use of wax or epoxy during transfer. In this process, the substrate of a wafer-level structure to be transferred serves as a carrier, and is etched away once the transfer has been completed. Another important feature of this process is that two electrodes constitutes an electrostatic actuator array. An SOI wafer and a silicon wafer (see Figure 1) are used as the carrier and electrode wafers, respectively. After oxidation, both wafers are patterned and etched to define a corrugation profile and electrode array, respectively. The polysilicon layer is deposited on the SOI wafer. The carrier wafer is bonded to the electrode wafer by using evaporated indium bumps. The piston pressure of 4 kPa is applied at 156 C in a vacuum chamber to provide hermetic sealing. The substrate of the SOI wafer is etched in a 25 weight percent TMAH bath at 80 C. The exposed buried oxide is then removed by using 49 percent HF droplets after an oxygen plasma ashing. The SOI top silicon layer is etched away by using an SF6 plasma to define the corrugation profile, followed by the HF droplet etching of the remaining oxide. The SF6 plasma with a shadow mask selectively etches the polysilicon membrane, if the transferred membrane structure needs to be patterned. Electrostatic actuators with various electrode gaps have been fabricated by this transfer technique. The gap between the transferred membrane and electrode substrate is very uniform ( 0.1 m across a wafer diameter of 100 mm, provided by optimizing the bonding control). Figure 2 depicts the finished product.

Yang, Eui-Hyeok↗

NASA NTRS2002

A Piezoelectric Unimorph Deformable Mirror Concept by Wafer Transfer for Ultra Large Space Telescopes

Future concepts of ultra large space telescopes include segmented silicon mirrors and inflatable polymer mirrors. Primary mirrors for these systems cannot meet optical surface figure requirements and are likely to generate over several microns of wavefront errors. In order to correct for these large wavefront errors, high stroke optical quality deformable mirrors are required. JPL has recently developed a new technology for transferring an entire wafer-level mirror membrane from one substrate to another. A thin membrane, 100 mm in diameter, has been successfully transferred without using adhesives or polymers. The measured peak-to-valley surface error of a transferred and patterned membrane (1 mm x 1 mm x 0.016 mm) is only 9 nm. The mirror element actuation principle is based on a piezoelectric unimorph. A voltage applied to the piezoelectric layer induces stress in the longitudinal direction causing the film to deform and pull on the mirror connected to it. The advantage of this approach is that the small longitudinal strains obtainable from a piezoelectric material at modest voltages are thus translated into large vertical displacements. Modeling is performed for a unimorph membrane consisting of clamped rectangular membrane with a PZT layer with variable dimensions. The membrane transfer technology is combined with the piezoelectric bimorph actuator concept to constitute a compact deformable mirror device with a large stroke actuation of a continuous mirror membrane, resulting in a compact A0 systems for use in ultra large space telescopes.

continuous mirror↗

NASA NTRS2001

A Wafer Transfer Technology for MEMS Adaptive Optics

Adaptive optics systems require the combination of several advanced technologies such as precision optics, wavefront sensors, deformable mirrors, and lasers with high-speed control systems. The deformable mirror with a continuous membrane is a key component of these systems. This paper describes a new technique for transferring an entire wafer-level silicon membrane from one substrate to another. This technology is developed for the fabrication of a compact deformable mirror with a continuous facet. A 1 (mu)m thick silicon membrane, 100 mm in diameter, has been successfully transferred without using adhesives or polymers (i.e. wax, epoxy, or photoresist). Smaller or larger diameter membranes can also be transferred using this technique. The fabricated actuator membrane with an electrode gap of 1.5 (mu)m shows a vertical deflection of 0.37 (mu)m at 55 V.

Micro Electro Mechanical Systems (MEMS)↗