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Yang, H.

Publications and source records attributed to Yang, H..

At least 55 records · Page 3
All sourcesNASA NTRSDOE OSTI
DOE OSTI2014

Dynamical Casimir–Polder force on a partially dressed atom in a cavity comprising a dielectric

We put a two-level atom into a cavity comprising a dielectric with output coupling. An analytical expression of the dynamical Casimir–Polder force in such a system is obtained when the system starts from a partially dressed state. And the effects of several relevant parameters of the system on the time-dependent force are also discussed. -- Highlights: •We get the dynamical CP force on a partially dressed atom in a dielectric cavity. •The force in this cavity is larger than that in infinite dielectric space. •The force is not symmetric with respect to the center of the cavity. •The oscillating time of the force increases with the cavity size.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2013

Carrier capture dynamics of single InGaAs/GaAs quantum-dot layers

Using 800 nm, 25-fs pulses from a mode locked Ti:Al{sub 2}O{sub 3} laser, we have measured the ultrafast optical reflectivity of MBE-grown, single-layer In{sub 0.4}Ga{sub 0.6}As/GaAs quantum-dot (QD) samples. The QDs are formed via two-stage Stranski-Krastanov growth: following initial InGaAs deposition at a relatively low temperature, self assembly of the QDs occurs during a subsequent higher temperature anneal. The capture times for free carriers excited in the surrounding GaAs (barrier layer) are as short as 140 fs, indicating capture efficiencies for the InGaAs quantum layer approaching 1. The capture rates are positively correlated with initial InGaAs thickness and annealing temperature. With increasing excited carrier density, the capture rate decreases; this slowing of the dynamics is attributed to Pauli state blocking within the InGaAs quantum layer.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2012

Microstructure and micro-Raman studies of nitridation and structure transition of gallium oxide nanowires

Here we present a detailed study on nitridation and structure transition in monoclinic gallium oxide ({beta}-Ga{sub 2}O{sub 3}) nanowires grown on Si substrates with chemical vapor phase epitaxy. The nanowires were systematically nitridated at different temperatures. Their morphologies and microstructures were precisely characterized using field-emission scanning electron microscopy (SEM), high-resolution transmission electron microscopy (HRTEM), and confocal micro-Raman spectroscopy. It is found that heat treatment of Ga{sub 2}O{sub 3} nanowires in the gas of ammonia results in rich substructures including the Ga{sub 2}O{sub 3} phase, the crystalline GaN phase, and other meta structures. The identification of these structures helps to understand some interesting phenomena observed in nanostructures, such as the microstructural origin of the unknown Raman lines in GaN nanowires. - Highlights: Black-Right-Pointing-Pointer Nitridation and structure transition of Ga{sub 2}O{sub 3} significantly depend on temperature. Black-Right-Pointing-Pointer G-N bonds form at lower temperatures but the Ga{sub 2}O{sub 3} lattice is still dominant. Black-Right-Pointing-Pointer Amorphous GaN coexists with crystalline Ga{sub 2}O{sub 3} at higher temperatures. Black-Right-Pointing-Pointer Crystalline GaN with distinct morphology is obtained at much higher temperatures.

36 MATERIALS SCIENCE↗