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Engineering topics

Yang, J. Joshua

Publications and source records attributed to Yang, J. Joshua.

Intrinsically stretchable neuromorphic devices for on-body processing of health data with artificial intelligence

For leveraging wearable technologies to advance precision medicine, personalized and learning-based analysis of continuously acquired health data is indispensable, for which neuromorphic computing could provide the most efficient implementation of artificial intelligence (AI) data processing. For realizing on-body neuromorphic computing, skin-like stretchability is required, but yet to be combined with the suite of desired neuromorphic metrics, including linear, symmetric weight update, and sufficient state retention, for achieving high computing efficiency. Here, we report an intrinsically stretchable neuromorphic device based on an electrochemical transistor, which provides a large number (>800) of states, linear/symmetric weight update, excellent switching endurance (>100 million), good state retention (>10 4 s), together with high stretchability of 100% strain. Further integration into a prototype array successfully realized the implementation of vector-matrix multiplication even at 100% strain. Finally, we demonstrate the feasibility of implementing AI-based classification of health signals (as exemplified by electrocardiograms) with a high accuracy that is minimally influenced by the stretched state of the neuromorphic hardware. Finally, this work breaks the ground for combining AI data analysis into skin-like wearable electronics for achieving human-integrated/mimetic intelligent systems.

60 APPLIED LIFE SCIENCES↗

Engineering Tunneling Selector to Achieve High Non-linearity for 1S1R Integration

Memristor devices have been extensively studied as one of the most promising technologies for next-generation non-volatile memory. However, for the memristor devices to have a real technological impact, they must be densely packed in a large crossbar array (CBA) exceeding Gigabytes in size. Devising a selector device that is CMOS compatible, 3D stackable, and has a high non-linearity (NL) and great endurance is a crucial enabling ingredient to reach this goal. Tunneling based selectors are very promising in these aspects, but the mediocre NL value limits their applications in large passive crossbar arrays. In this work, we demonstrated a trilayer tunneling selector based on the Ge/Pt/TaN 1+x /Ta 2 O 5 /TaN 1+x /Pd layers that could achieve a NL of 3 × 10 5 , which is the highest NL achieved using a tunnel selector so far. The record-high tunneling NL is partially attributed to the bottom electrode's ultra-smoothness (BE) induced by a Ge/Pt layer. We further demonstrated the feasibility of 1S1R (1-selector 1-resistor) integration by vertically integrating a Pd/Ta 2 O 5 /Ru based memristor on top of the proposed selector.

77 NANOSCIENCE AND NANOTECHNOLOGY↗

Low Current and Analog Memristor with Ru as Mobile Species

The switching parameters and device performance of memristors are predominately determined by their mobile species and matrix materials. Devices with oxygen or oxygen vacancies as the mobile species usually exhibit a great retention but also need a relatively high switching current (e.g., >30 mu A), while devices with Ag or Cu as cation mobile species do not require a high switching current but usually show a poor retention. Here, Ru is studied as a new type of mobile species for memristors to achieve low switching current, fast speed, good reliability, scalability, and analog switching property simultaneously. An electrochemical metallization-like memristor with a stack of Pt/Ta2O5/Ru is developed. Migration of Ru ions is revealed by energy-dispersive X-ray spectroscopy mapping and in situ transmission electron microscopy within a sub-10 nm active device area before and after switching. The results open up a new avenue to engineer memristors for desired properties.

analog switching↗