Engineering topics

Yang, Jie

Publications and source records attributed to Yang, Jie.

11 records

DOE OSTI2024

Ultraviolet Laser Activation of Phosphorus-Doped Polysilicon Layers for Crystalline Silicon Solar Cells

In crystalline silicon photovoltaics (c-Si PV), a pulsed laser can be used as a substitute for a high-temperature furnace dopant diffusion/activation step. In contrast to furnace-based activation, lasers can be used to achieve highly localized doping with controlled dopant concentrations, useful in advanced architectures such as the interdigitated back contact (IBC) solar cell. In this study, a pulsed ultraviolet (UV) laser is utilized for phosphorus dopant activation within a low-pressure chemical vapor deposited (LPCVD) polycrystalline silicon (poly-Si) passivated contact layer. The highest implied open-circuit voltage iV oc values achieved using this approach reach 726 mV. However, this comes at the expense of high specific contact resistivities ρ c , which is attributed to a lower dopant concentration across the poly-Si(n + )/SiO x /c-Si interface. Regardless, the optimum iV oc , ρ c combination is measured at a laser fluence of 0.78 J cm -2 producing values of 712 mV and 89 mΩ-cm 2 , respectively. These values are still compatible with high-efficiency solar cell designs, underscoring the feasibility and effectiveness of this approach.

14 SOLAR ENERGY↗

DOE OSTI2024

UV-Induced Reaction Pathways in Bromoform Probed with Ultrafast Electron Diffraction

For many chemical reactions, it remains notoriously difficult to predict and experimentally determine the rates and branching ratios between different reaction channels. This is particularly the case for reactions involving short-lived intermediates, whose observation requires ultrafast methods. The UV photochemistry of bromoform (CHBr 3 ) is among the most intensely studied photoreactions. Yet, a detailed understanding of the chemical pathways leading to the production of atomic Br and molecular Br 2 fragments has proven challenging. In particular, the role of isomerization and/or roaming and their competition with direct C–Br bond scission has been a matter of continued debate. Here, in this work, gas-phase ultrafast megaelectronvolt electron diffraction (MeV-UED) is used to directly study structural dynamics in bromoform after single 267 nm photon excitation with femtosecond temporal resolution. The results show unambiguously that isomerization contributes significantly to the early stages of the UV photochemistry of bromoform. In addition to direct C–Br bond breaking within <200 fs, formation of iso-CHBr 3 (Br-CH-Br-Br) is observed on the same time scale and with an isomer lifetime of >1.1 ps. The branching ratio between direct dissociation and isomerization is determined to be 0.4 ± 0.2:0.6 ± 0.2, i.e., approximately 60% of molecules undergo isomerization within the first few hundred femtoseconds after UV excitation. The structure and time of formation of iso-CHBr 3 compare favorably with the results of an ab initio molecular dynamics simulation. The lifetime and interatomic distances of the isomer are consistent with the involvement of a roaming reaction mechanism.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

DOE OSTI2024

Bulk high-temperature superconductivity in pressurized tetragonal La 2 PrNi 2 O 7

The Ruddlesden–Popper (R–P) bilayer nickelate, La 3 Ni 2 O 7 , was recently found to show signatures of high-temperature superconductivity (HTSC) at pressures above 14 GPa . Subsequent investigations achieved zero resistance in single-crystalline and polycrystalline samples under hydrostatic pressure conditions. Yet, obviousdiamagnetic signals, the other hallmark of superconductors, are still lacking owing to the flamentary nature with low superconducting volume fraction. The presence of a new 1313 polymorph and competing R–P phases obscured proper identification of the phase for HTSC. Thus, achieving bulk HTSC and identifying the phase at play are the most prominent tasks. Here we address these issues in the praseodymium (Pr)-doped La 2 PrNi 2 O 7 polycrystalline samples. We find that substitutions of Pr for La efectively inhibit the intergrowth of diferent R–P phases, resulting in a nearly pure bilayer structure. For La 2 PrNi 2 O 7 , pressure-induced orthorhombic to tetragonalstructural transition takes place at P c ≈ 11 GPa, above which HTSC emerges gradually on further compression. The superconducting transition temperatures at 18–20 GPa reach $T$ $^{onset}_{c}$ = $82.5$ $K$ and $T$ $^{zero}_{c}$ = $60$ $K$, which are the highest values, to our knowledge, among known nickelate superconductors. Importantly, bulk HTSC was testified by detecting clear diamagnetic signals below about 75 K with appreciable superconducting shielding volume fractions at a pressure of above 15 GPa. Further, our results not only resolve the existing controversies but also provide directions for exploring bulk HTSC in the bilayer nickelates.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

DOE OSTI2024

Tracking dissociation pathways of nitrobenzene via mega-electron-volt ultrafast electron diffraction

As the simplest nitroaromatic compound, nitrobenzene is an interesting model system to explore the rich photochemistry of nitroaromatic compounds. Previous investigations of nitrobenzene's photochemical dynamics have probed structural and electronic properties. These investigations paint, at times, a convoluted and sometimes contradictory description of the photochemical landscape. Here, we investigate the ultrafast dynamics of nitrobenzene triggered by photoexcitation at 267 nm for the first time using a structural probe with femtosecond time resolution. Our probe complements previous measurements of nitrobenzene's electronic structure evolution and aids in determining the photochemical dynamics with less ambiguity. We employ megaelectronvolt ultrafast electron diffraction to follow nitrobenzene's structural evolution within the first 5 ps after photoexcitation. We observe ground state recovery within 160 ± 60 fs through nonadiabatic dynamics. Based on comparisons of the experimental signal with molecular dynamics simulations, we exclude a significant population of the triplet manifold. Furthermore, we do not observe fragmentation of nitrobenzene within the investigated time window, which indicates that previously observed photofragmentation reactions take place in the vibrationally 'hot' ground state on timescales considerably beyond 5 ps.

74 ATOMIC AND MOLECULAR PHYSICS↗

DOE OSTI2024

A global urban heat island intensity dataset: Generation, comparison, and analysis

The urban heat island (UHI) effect, a phenomenon of local warming over urban areas, is the most well-known impact of urbanization on climate. Globally consistent estimates of the UHI intensity (UHII) are crucial for examining this phenomenon across time and space. However, publicly available UHII datasets are limited and have several constraints: (1) they are for clear-sky surface UHII, not all-sky surface UHII and canopy (air temperature) UHII; (2) the estimation methods often neglect anthropogenic disturbance, introducing uncertainties in the estimated UHII. To address these issues, this study proposes a new dynamic equal-area (DEA) method that can minimize the influence of various confounding factors on UHII estimates through a dynamic cyclic process. Utilizing the DEA method and leveraging various gridded temperature data, we develop a global-scale (>10,000 cities), long-term (over 20 years by month), and multi-faceted (clear-sky surface, all-sky surface, and canopy) UHII dataset. Further, based on these estimates, we provide a comprehensive analysis of the UHII and its trends in global cities. The UHII is found to be greater than zero in >80% of cities, with global annual average magnitudes around 1.0 °C (day) and 0.8 °C (night) for surface UHII, and close to 0.5 °C for canopy UHII. Furthermore, an interannual upward trend in UHII is observed in >60% of cities, with global annual average trends exceeding 0.1 °C/decade (day) and over 0.06 °C/decade (night) for surface UHII, and slightly surpassing 0.03 °C/decade for canopy UHII. Notably, there exists a positive correlation between the magnitude and trend of UHII, suggesting that cities with stronger UHII tend to experience faster growth in UHII. Additionally, discrepancies in UHII are found between different temperature data, stemming not only from distinctions in data types (surface or air temperature) but also from differences in data acquisition times (Terra or Aqua), weather conditions (clear-sky or all-sky), and processing methodologies (with or without gap filling). Overall, our proposed method, dataset, and analysis results have the potential to provide valuable insights for future urban climate studies. The UHII dataset is publicly available at https://doi.org/10.6084/m9.figshare.24821538.

54 ENVIRONMENTAL SCIENCES↗

NASA NTRS2018

Spreading Sequence System for Full Connectivity Relay Network

Fully connected uplink and downlink fully connected relay network systems using pseudo-noise spreading and despreading sequences subjected to maximizing the signal-to-interference-plus-noise ratio. The relay network systems comprise one or more transmitting units, relays, and receiving units connected via a communication network. The transmitting units, relays, and receiving units each may include a computer for performing the methods and steps described herein and transceivers for transmitting and/or receiving signals. The computer encodes and/or decodes communication signals via optimum adaptive PN sequences found by employing Cholesky decompositions and singular value decompositions (SVD). The PN sequences employ channel state information (CSI) to more effectively and more securely computing the optimal sequences.

Kwon, Hyuck M.↗

NASA NTRS2015

Extreme-Environment Silicon-Carbide (SiC) Wireless Sensor Suite

Phase II objectives: Develop an integrated silicon-carbide wireless sensor suite capable of in situ measurements of critical characteristics of NTP engine; Compose silicon-carbide wireless sensor suite of: Extreme-environment sensors center, Dedicated high-temperature (450 deg C) silicon-carbide electronics that provide power and signal conditioning capabilities as well as radio frequency modulation and wireless data transmission capabilities center, An onboard energy harvesting system as a power source.

Yang, Jie↗

NASA NTRS2003

Multi-layer assemblies with predetermined stress profile and method for producing same

Multi-layer assemblies of polysilicon thin films having predetermined stress characteristics and techniques for forming such assemblies are disclosed. In particular, a multi-layer assembly of polysilicon thin films may be produced that has a stress level of zero, or substantially so. The multi-layer assemblies comprise at least one constituent thin film having a tensile stress and at least one constituent thin film having a compressive stress. The thin films forming the multi-layer assemblies may be disposed immediately adjacent to one another without the use of intermediate layers between the thin films. Multi-layer assemblies exhibiting selectively determinable overall bending moments are also disclosed. Selective production of overall bending moments in microstructures enables manufacture of such structures with a wide array of geometrical configurations.

Heuer, Arthur H.↗

NASA NTRS2002

Large area polysilicon films with predetermined stress characteristics and method for producing same

Heuer, Arthur H.↗

NASA NTRS2002

Low stress polysilicon film and method for producing same

Multi-layer assemblies of polysilicon thin films having predetermined stress characteristics and techniques for forming such assemblies are disclosed. In particular, a multi-layer assembly of polysilicon thin film may be produced that has a stress level of zero, or substantially so. The multi-layer assemblies comprise at least one constituent thin film having a tensile stress and at least one constituent thin film having a compressive stress. The thin films forming the multi-layer assemblies may be disposed immediately adjacent to one another without the use of intermediate layers between the thin films.

Heuer, Arthur H.↗

NASA NTRS2001

Low stress polysilicon film and method for producing same

Multi-layer assemblies of polysilicon thin films having predetermined stress characteristics and techniques for forming such assemblies are disclosed. In particular, a multi-layer assembly of polysilicon thin film may be produced that has a stress level of zero, or substantially so. The multi-layer assemblies comprise at least one constituent thin film having a tensile stress and at least one constituent thin film having a compressive stress. The thin films forming the multi-layer assemblies may be disposed immediately adjacent to one another without the use of intermediate layers between the thin films.

Heuer, Arthur H.↗