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Yang, Zhendong

Publications and source records attributed to Yang, Zhendong.

Integrated ELM and divertor power flux control using RMPs with low input torque in EAST in support of the ITER research plan

Experiments have been carried out at the EAST tokamak to study ITER-relevant scenario integration issues, related to edge localized mode (ELM) control in H-mode plasmas by the application of three-dimensional (3D) resonant magnetic perturbations (RMPs), which have a large impact on the execution of the ITER research plan. The EAST experiments have successfully demonstrated ELM suppression at normalized torque inputs similar to ITER. The application of RMP fields with high toroidal mode number (n = 4) reduces the impact of ELM control on energy and particle confinement compared to those use lower n (n = 1, 2) RMPs. Injection of successive pellets is found to be effective in increasing the plasma density in ELM-suppressed H-modes and reducing the divertor power without triggering large ELMs at EAST. Access to high recycling and radiative divertor conditions while maintaining ELM suppression has been demonstrated in EAST by the use of gas fuelling and neon impurity seeding. Both approaches have been found to be effective in reducing power fluxes to the divertor strike points in near-separatrix lobes for both n = 2 and n = 4 RMPs. Furthermore, reduction of power fluxes in off-separatrix lobes is only effective for n = 4 RMP application, which is consistent with magnetic topology modelling (including plasma response) results showing a shallow penetration into the confined plasma region of field lines connected to these lobes compared to n = 2. The EAST results support the use of high n 3D fields for ELM suppression in ITER high Q DT scenarios since they provide optimum integration features regarding energy and particle confinement, pellet fuelling, radiative divertor operation while eliminating ELM transient power loads and being compatible with low torque input.

pellet fuelling↗

Rolled-up electromagnetic component for on-chip applications and method of making a rolled-up electromagnetic component

A rolled-up electromagnetic component for on-chip applications comprises: a multilayer sheet in a rolled configuration comprising at least one turn about a longitudinal axis; a core defined by a first turn of the rolled configuration; and a soft magnetic material disposed within the core, where the multilayer sheet comprises a conductive pattern layer on a strain-relieved layer. A method of making a rolled-up electromagnetic component for on-chip applications includes forming a rolled-up device comprising: a multilayer sheet in a rolled configuration having at least one turn about a longitudinal axis, where the multilayer sheet comprises a conductive pattern layer on a strain-relieved layer; and a core defined by a first turn of the rolled configuration. The method further includes introducing a soft magnetic material into the core.

Li, Xiuling↗

Monolithic mtesla-level magnetic induction by self-rolled-up membrane technology

Monolithic strong magnetic induction at the mtesla to tesla level provides essential functionalities to physical, chemical, and medical systems. Current design options are constrained by existing capabilities in three-dimensional (3D) structure construction, current handling, and magnetic material integration. We report here geometric transformation of large-area and relatively thick (~100 to 250 nm) 2D nanomembranes into multiturn 3D air-core microtubes by a vapor-phase self-rolled-up membrane (S-RuM) nanotechnology, combined with postrolling integration of ferrofluid magnetic materials by capillary force. Hundreds of S-RuM power inductors on sapphire are designed and tested, with maximum operating frequency exceeding 500 MHz. An inductance of 1.24 μH at 10 kHz has been achieved for a single microtube inductor, with corresponding areal and volumetric inductance densities of 3 μH/mm 2 and 23 μH/mm 3 , respectively. The simulated intensity of the magnetic induction reaches tens of mtesla in fabricated devices at 10 MHz.

42 ENGINEERING↗