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Yao, Y

Publications and source records attributed to Yao, Y.

9 records
All sourcesNASA NTRSDOE OSTI
DOE OSTI2014

TU-F-18A-07: To Explore the More Realistic Energy Responses of the In-Depth Photon Counting Detectors

Purpose: We study the effect of the secondary photon events on modeling the energy response functions of the In-depth photon counting X-ray detectors (PCXD) and the potential impact of the spectral distortion on material decompositions. Methods: Square-shape wafers of three potential PCXD materials were constructed (5-by-20-by-30 mm{sup 3} for Si, 4-by-20-by-5 mm{sup 3} for GaAs and 4-by-20-by-3 mm{sup 3} for CdTe), with pixel size of 5-by-4 mm{sup 2} for Si and 5-by-5 mm{sup 2} for GaAs and CdTe. The depth direction (z-direction) was segmented into 5 layers with exponentially increasing thicknesses of each layer. X-rays from 10keV to 120keV with 20000 photons per keV bin was simulated to characterize the energy response function of each PCXD using Geant4. Secondary photons events were recorded and we omitted the photons exiting the detector. The Energy Response Functions (ERFs) from the Monte Carlo (MC) simulations were compared with those from a semi-ideal model developed earlier. Results: For Si, detection of secondary events in the center detector were minimal due to the long aspect ratio of the detector, which results in the agreement between the theoretical prediction and the MC simulation with and without the secondary photons. For CdTe, the secondary photons captured by the center pixel were important, leading to obvious disagreement between the analytical and the simulated ERF. After correction for secondary events, the two curves were more similar except for the escape peaks which are not correctly portrayed by the semi-ideal model. For GaAs, the behavior is in between Si and CdTe. Conclusion: Given the complexity of the In-Depth PCXD's geometry, the uniform semi-ideal model does not fully characterize the ERF at each layer. Therefore, more realistic models need to be explored for better modeling of the spectral distortion.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2013

Electromagnetic Properties of (Gd, Y)Ba2Cu3Ox Superconducting Tapes With High Levels of Zr Addition

The dependence of the critical current density (J(c)) on the orientation of applied magnetic fields was studied in Zr-doped (Gd, Y)Ba2Cu3Ox tapes fabricated by metal organic chemical vapor deposition. The in-field performance of J(c) of (Gd, Y)Ba2Cu3Ox tapes with Zr-doping levels of 7.5-30 at.% was investigated up to 5 T over a temperature range of 40-77 K. The highest critical currents (I-c) at H parallel to c and the highest values of minimum Ic in angular dependence measurements were achieved in the tapes with 20% Zr doping over a broad range of temperature and magnetic field conditions measured. The electromagnetic properties have been related to the changes in BaZrO3 content and microstructure.

Liu, Y↗
DOE OSTI2013

Enhanced critical currents in (Gd,Y)Ba2Cu3Ox superconducting tapes with high levels of Zr addition

The critical current and structural properties of (Gd,Y)BaCuO tapes made by metal organic chemical vapor deposition (MOCVD) with Zr addition levels up to 30 at.% have been investigated. The reduction in critical current beyond the previously optimized Zr addition level of 7.5 at.% was found to be due to structural deterioration of the (Gd,Y)Ba2Cu3Ox film. By a modified MOCVD process,enhanced critical current densities have been achieved with high levels of Zr addition,including 3.83 MA cm(-2) in 15 at.% Zr- added 1.1 mu m thick film at 77 K in zero magnetic field. Critical currents as high as 1072 A/ 12 mm have been reached in (Gd,Y) BaCuO tapes with 15 at.% Zr addition at 30 K in a field of 3 T applied perpendicular to the tape,corresponding to a pinning force value of 268 GN m(-3). The enhanced critical currents achievable with a high density of nanoscale defects by employing high levels of second- phase additions enable the performance targets needed for the use of HTS tapes in coil applications involving high magnetic fields at temperatures below 50 K to be met.

Selvamanickam, V↗
DOE OSTI2012

The low-temperature, high-magnetic-field critical current characteristics of Zr-added (Gd, Y)Ba2Cu3Ox superconducting tapes

Critical current performances of state-of-the-art Zr-added (Gd, Y)BaCuO tapes have been investigated over a temperature range of 20-77 K, in magnetic fields up to 9 T and over a wide angular range of magnetic field orientations. The peak in critical current that is commonly observed in the field orientation perpendicular to the tape in BaZrO3 (BZO) containing superconducting tapes is found to vanish at 30 K in magnetic fields at 1-9 T. While the critical current of 15% Zr-added tapes was about 40% lower than that of 7.5% Zr-added tapes at 77 K, the pinning force values of the former were found to be 18-23% higher than those of the latter in the temperature range of 20-40 K and in magnetic fields of 3-5 T. The results from this study emphasize the importance of optimization of coated conductor fabrication processes for optimum performance not just in low magnetic fields at 77 K but also at the operating conditions of low temperatures and high magnetic fields that are of interest, especially for rotating superconducting machinery applications.

Selvamanickam, V↗
DOE OSTI2012

The benchmark of gutzwiller density functional theory in hydrogen systems

We propose an approximate form of the exchange-correlation energy functional for the Gutzwiller density functional theory. It satisfies certain physical constraints in both weak and strong electron correlation limits. We benchmark the Gutzwiller density functional approximation in the hydrogen systems, where the static correlation error is shown to be negligible. The good transferability is demonstrated by applications to the hydrogen molecule and some crystal structures.

08 HYDROGEN↗