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Yariv, Amnon

Publications and source records attributed to Yariv, Amnon.

Optical resonator

The invention discloses a semi-ring Fabry-Perot (SRFP) optical resonator structure comprising a medium including an edge forming a reflective facet and a waveguide within the medium, the waveguide having opposing ends formed by the reflective facet. The performance of the SRFP resonator can be further enhanced by including a Mach-Zehnder interferometer in the waveguide on one side of the gain medium. The optical resonator can be employed in a variety of optical devices. Laser structures using at least one SRFP resonator are disclosed where the resonators are disposed on opposite sides of a gain medium. Other laser structures employing one or more resonators on one side of a gain region are also disclosed.

Taghavi-Larigani, Shervin

Tunable semiconductor lasers

Tunable semiconductor lasers are disclosed requiring minimized coupling regions. Multiple laser embodiments employ ring resonators or ring resonator pairs using only a single coupling region with the gain medium are detailed. Tuning can be performed by changing the phase of the coupling coefficient between the gain medium and a ring resonator of the laser. Another embodiment provides a tunable laser including two Mach-Zehnder interferometers in series and a reflector coupled to a gain medium.

Taghavi-Larigani, Shervin

Optical resonator and laser applications

The invention discloses a semi-ring Fabry-Perot (SRFP) optical resonator structure comprising a medium including an edge forming a reflective facet and a waveguide within the medium, the waveguide having opposing ends formed by the reflective facet. The performance of the SRFP resonator can be further enhanced by including a Mach-Zehnder interferometer in the waveguide on one side of the gain medium. The optical resonator can be employed in a variety of optical devices. Laser structures using at least one SRFP resonator are disclosed where the resonators are disposed on opposite sides of a gain medium. Other laser structures employing one or more resonators on one side of a gain region are also disclosed.

Taghavi-Larigani, Shervin

Fundamental limits to performance of quantum well infrared detectors

Radiometric, density of states (material), and thermal considerations are used to obtain the figure of merit of the quantum-well GaAs/GaAlAs infrared detectors described by Smith et. al. The results are compared with HgCdTe, the present industry standard, as well as with recent experiments at other laboratories.

Yariv, Amnon

Diffraction-Coupled, Phase-Locked Semiconductor Laser Array

Stable, narrow far field produced. Array of lasers fabricated on single chip. Individual laser waveguides isolated from each other except in end portions, where diffraction coupling takes place. Radiation pattern far from laser array has single, sharp central lobe when all lasers operate in phase with each other. Shape of lobe does not vary appreciably with array current. Applications include recording, printing, and range finding.

Katz, Joseph

Phase-Locked Semiconductor Lasers With Separate Contacts

Individual current feeds enable better uniformity and flexible control. Separate contacts for lasers in array enable control of output radiation pattern and compensation of manufacturing nonuniformities among lasers. Concept of separate current control described for two-laser array in "Semiconductor Laser Phased Array" (NPO-15963).

Katz, Joseph

Tunable superlattice p-i-n photodetectors: Characteristics, theory, and applications

Extended measurements and theory on the recently developed monolithic wavelength demultiplexer consisting of voltage-tunable superlattice p-i-n photodetectors in a waveguide configuration are discussed. It is shown that the device is able to demultiplex and detect two optical signals with a wavelength separation of 20 nm directly into different electrical channels at a data rate of 1 Gb/s and with a crosstalk attenuation varying between 20 and 28 dB, depending on the polarization. The minimum acceptable crosstalk attenuation at a data rate of 100 Mb/s is determined to be 10 dB. The feasibility of using the device as a polarization angle sensor for linearly polarized light is also demonstrated. A theory for the emission of photogenerated carriers out of the quantum wells is included, since this is potentially a speed limiting mechanism in these detectors. It is shown that a theory of thermally assisted tunneling by polar optical phonon interaction is able to predict emission times consistent with the observed temporal response.

Larsson, Anders

Diode-Laser Array Suppresses Extraneous Modes

Diode parameters varied to shape output beam. Array of phase-locked GaAs/GaAIAs diode lasers produces light beam with one main radiation lobe. Physical parameters of laser diodes differ from each other in way that favors oscillation in fundamental supermode, suppressing oscillation in higher-order modes.

Kapon, Elyahou

Tunable Dual Semiconductor Laser

Parallel lasers interact in shared space to alter output wavelength. New device consists of two stripe lasers in aluminum gallium arsenide chip. Parallel stripes close enough so light from lower laser coupled into upper laser and vice versa. Lasers operated by low-duty-cycle current pulses. Lasing threshold of each about 100 mA. Currents controlled independently. Useful in optical communications systems employing wavelength-division multiplexing.

Mukai, Seiji