110–140-GHz Wide-IF-Band 65-nm CMOS Receiver Design for Fusion Plasma Diagnostics
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Engineering topics
Publications and source records attributed to Ye, Yu.
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To efficiently determine the plasma electron density fluctuations using the MIR diagnostic technique, a 55–75 GHz 65 nm-CMOS transmitter has been developed where four separate intermediate frequency (IF) signals are up-converted, amplified, and then combined to generate an 8-tone RF output; a broadband 90 nm-CMOS receiver has also been constructed, which consists of an RF-low noise amplifier (LNA), mixer, and IF amplifier. The circuits and their corresponding modules will soon be deployed on the DIII-D and NSTX-U fusion devices. A 110–140 GHz 65 nm-CMOS receiver has also been designed, which is suitable for measuring the deep-core temperature fluctuations in the DIII-D tokamak using the electron cyclotron emission imaging diagnostic system. In addition to the RF-LNA/balun, mixer, and IF amplifier, an LO balun/tripler and driving amplifier are now included in this highly integrated circuit chip. By adopting the microwave and millimeterwave system-on-chip concept in the front-end system design, this paper demonstrates that compact transmitter and receiver modules can be easily built, which, in turn, facilitates array implementation and maintenance.
Our current understanding of the electronic state of iron in lower-mantle minerals leads to a considerable disagreement in bulk sound speed with seismic measurements if the lower mantle has the same composition as the upper mantle (pyrolite). In the modeling studies, the content and oxidation state of Fe in the minerals have been assumed to be constant throughout the lower mantle. Here, we report high-pressure experimental results in which Fe becomes dominantly Fe 2+ in bridgmanite synthesized at 40–70 GPa and 2,000 K, while it is in mixed oxidation state (Fe 3+ /ΣFe = 60%) in the samples synthesized below and above the pressure range. Little Fe 3+ in bridgmanite combined with the strong partitioning of Fe 2+ into ferropericlase will alter the Fe content for these minerals at 1,100- to 1,700-km depths. Further, our calculations show that the change in iron content harmonizes the bulk sound speed of pyrolite with the seismic values in this region. Our experiments support no significant changes in bulk composition for most of the mantle, but possible changes in physical properties and processes (such as viscosity and mantle flow patterns) in the midmantle.
The quest for high-efficiency heat-to-electricity conversion has been one of the major driving forces toward renewable energy production for the future. Efficient thermoelectric devices require high voltage generation from a temperature gradient and a large electrical conductivity while maintaining a low thermal conductivity. For a given thermal conductivity and temperature, the thermoelectric power factor is determined by the electronic structure of the material. Low dimensionality (1D and 2D) opens new routes to a high power factor due to the unique density of states (DOS) of confined electrons and holes. The 2D transition metal dichalcogenide (TMDC) semiconductors represent a new class of thermoelectric materials not only due to such confinement effects but especially due to their large effective masses and valley degeneracies. Here, we report a power factor of MoS2 as large as 8.5 mW m –1 K –2 at room temperature, which is among the highest measured in traditional, gapped thermoelectric materials. To obtain these high power factors, we perform thermoelectric measurements on few-layer MoS 2 in the metallic regime, which allows us to access the 2D DOS near the conduction band edge and exploit the effect of 2D confinement on electron scattering rates, resulting in a large Seebeck coefficient. We conclude the demonstrated high, electronically modulated power factor in 2D TMDCs holds promise for efficient thermoelectric energy conversion.
A V-band power amplifier in a bulk 65 nm CMOS technology with a peak gain 14.5 dB and 3-dB bandwidth of 28.8 GHz (50.8–79.6 GHz) is presented. The techniques to boost bandwidth and power efficiency are presented. In addition, the design of dummy filling to satisfy manufacturing density requirements while having negligible effects on performances is discussed in details. The PA features a three stage transformer coupled differential architecture with integrated input and output baluns on-chip. The PA achieves a measured saturated output power of 15.1 dBm and output 1 dB compression power of 12.9 dBm at 65 GHz. The peak power-added efficiency is 18.9%. The entire PA occupies area of 0.31 mm 2 , while consuming 150 mW from a 1.25 V supply.
Ringwoodite ({gamma}-Mg{sub 2}SiO{sub 4}) is the stable polymorph of olivine in the transition zone between 525-660 km depth, and can incorporate weight percent amounts of H{sub 2}O as hydroxyl, with charge compensated mainly by Mg vacancies (Mg{sup 2+} = 2H{sup +}), but also possibly as (Si{sup 4+} = 4H{sup +} and Mg{sup 2+} + 2H{sup +} = Si{sup 4+}). We synthesized pure Mg ringwoodite containing 2.5(3) wt% H{sub 2}O, measured by secondary ion mass spectrometry (SIMS), and determined its compressibility at 300 K by single-crystal and powder X-ray diffraction (XRD), as well as its thermal expansion behavior between 140 and 740 K at room pressure. A third-order Birch-Murnaghan equation of state (BM3 EOS) fits values of the isothermal bulk modulus K{sub T0} = 159(7) GPa and (dK{sub T}/dP){sub P = 0} = K' = 6.7(7) for single-crystal XRD; K{sub T0} = 161(4) GPa and K' = 5.4(6) for powder XRD, with K{sub T0} = 160(2) GPa and K' = 6.2(3) for the combined data sets. At room pressure, hydrous ringwoodite breaks down by an irreversible unit-cell expansion above 586 K, which may be related to dehydration and changes in the disorder mechanisms. Single-crystal intensity data were collected at various temperatures up to 736 K, and show that the cell volume V(cell) has a mean thermal expansion coefficient {alpha}{sub V0} of 40(4) x 10{sup -6}/K (143-736 K), and 29(2) x 10{sup -6}/K (143-586 K before irreversible expansion). V(Mg) have {alpha}{sub 0} values of 41(3) x 10{sup -6}/K (143-736 K), and V(Si) has {alpha}{sub 0} values of 20(3) x 10{sup -6}/K (143-586 K) and 132(4) x 10{sup -6}K (586-736 K). Based on the experimental data and previous work from {sup 29}Si NMR, we propose that during the irreversible expansion, a small amount of H{sup +} cations in Mg sites transfer to Si sites without changing the cubic spinel structure of ringwoodite, and the substituted Si{sup 4+} cations move to the normally vacant octahedral site at (1/2, 1/2, 0). Including new SIMS data on this and several Mg-ringwoodite samples from previous studies, we summarize volume-hydration data and show that the Mg{sup 2+} = 2H{sup +} dominates up to about 2 wt% H{sub 2}O, where a discontinuity in the volume vs. H{sub 2}O content trend suggests that other hydration mechanisms become important at very high H{sub 2}O contents.
Second-harmonic generation (SHG) has found extensive applications from hand-held laser pointers to spectroscopic and microscopic techniques. Recently, some cleavable van der Waals (vdW) crystals have shown SHG arising from a single atomic layer, where the SH light elucidated important information such as the grain boundaries and electronic structure in these ultra-thin materials. However, despite the inversion asymmetry of the single layer, the typical crystal stacking restores inversion symmetry for even numbers of layers leading to an oscillatory SH response, drastically reducing the applicability of vdW crystals such as molybdenum disulfide (MoS 2 ). Here, we probe the SHG generated from the noncentrosymmetric 3R crystal phase of MoS 2 . We experimentally observed quadratic dependence of second-harmonic intensity on layer number as a result of atomically phase-matched nonlinear dipoles in layers of the 3R crystal that constructively interfere. By studying the layer evolution of the A and B excitonic transitions in 3R-MoS 2 using SHG spectroscopy, we also found distinct electronic structure differences arising from the crystal structure and the dramatic effect of symmetry and layer stacking on the nonlinear properties of these atomic crystals. The constructive nature of the SHG in this 2D crystal provides a platform to reliably develop atomically flat and controllably thin nonlinear media.