Ultrawide Bandgap AlGaN Transistors for High Operating Temperature Electronics
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Engineering topics
Publications and source records attributed to Yen, Sean.
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A maze-based switch generally having three functional blocks is disclosed. The first functional block handles communications by accepting an entered maze pattern from an external system controller and outputting the entered maze pattern (and optionally its directional complement) to the second functional block. The second functional block stores the maze pattern (and optionally its directional complement) to a permanent storage element and outputs the stored, entered maze pattern and its directional complement to a series of transistors in the third functional block. The third functional block is an electronic maze in which a correct maze pattern and its directional complement must be received by the transistors for the transistors to pass electrical power through the electronic maze to a connected element. The third functional block may alternatively be implemented with optical elements, optoelectronic elements, microelectromechanical elements, or elements formed by other microsystem technologies.
GOMACtech conference
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Aluminum scandium nitride (Al 1-x Sc x N/AlScN) (x = 0.32) Lamb wave resonators (LWR) have been fabricated and tested to demonstrate electromechanical coupling coefficients (k t 2 ) in excess of 10%. The resonators exhibited an average k t 2 and unloaded quality factor (Q u ) of 10.28% and 711, respectively, when calculated from the measured data. Applying the Butterworth Van-Dyke (BVD) model to the measured data enabled the extraction of the resonator's lumped element parameters to calculate the motional quality factor (Q m ), which neglects the contributions of the electrical traces. For the best measured resonator response, results from the BVD model showed a Q m of 1184 and a resulting figure-of-merit (FOM = K 2 ·Q m ) of 100. Comparing the response of similar AlScN and AlN resonators shows that the AlScN LWR has a significantly lower motional resistance (R m ), suggesting that AlScN has a strong potential for use in piezoelectric microelectromechanical oscillators.
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There is provided a near-zero-power wakeup system in which a MEMS sensor for mechanical or acoustic signals is coupled to a very-low-power complementary metal oxide semiconductor (CMOS) application-specific integrated circuit (ASIC). Power consumption can be minimized by operating the ASIC with sub-threshold gate voltages.
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