Search NASA⌕ Search

Engineering topics

Yoo, Jae-Hyuck

Publications and source records attributed to Yoo, Jae-Hyuck.

Breakdown characteristics analysis of kV-class vertical GaN PIN rectifiers by wafer-level sub-bandgap photoluminescence mapping

This work reports analysis of the reverse-bias breakdown characteristics of homojunction gallium nitride (GaN) p–i–n (PIN) rectifiers fabricated on bulk GaN substrates. Sub-bandgap photoluminescence mapping at room temperature as a contactless, non-destructive wafer inspection method was performed to analyze the impact of material properties on grown GaN PIN diodes and to study the correlation between defect types and breakdown characteristics of vertical GaN PIN rectifiers. Under the sub-bandgap excitation, yellow luminescence is dominant. The premature breakdown characteristics of the fabricated kV-class vertical GaN PIN rectifiers with nitrogen-implanted floating guard rings are found to be associated with material defects and deep level complexes. Photoluminescence mapping has demonstrated its effectiveness in quantitative analysis of dislocations and other types of defects.

42 ENGINEERING↗

Enhanced laser-induced damage performance of all-glass metasurfaces for energetic pulsed laser applications

To fabricate optical components with surface layers compatible with high power laser applications that may operate as antireflective coatings, polarization rotators, or harness physical anisotropy for other uses, metasurfaces are becoming an appealing candidate. In this study, a large-beam (1.05 cm diameter) 351-nm laser-induced damage testing was done on an all-glass metasurface structure composed of cone-like features with a subwavelength spacing of adjacent features. These structures were fabricated on untreated fused silica glass and damage tested, as were structures that were fabricated on fused silica glass that experienced a preliminary etching process to remove the surface Beilby layer that is characteristic of polished fused silica. The laser-induced damage onset for structures on untreated fused silica glass was 19.3 J∙cm -2 , while the sample that saw an initial pretreatment etch exhibited an improved damage onset of 20.4 J∙cm -2 , only 6% short of the reference pretreated glass damage onset of 21.7 J∙cm -2 . For perspective, the National Ignition Facility (NIF) operational average fluence at this wavelength and pulse length is about 10 J/cm2. At a fluence of 25.5 J∙cm -2 , the reference (pretreated) fused silica initiated 5.2 damage sites per mm 2 , while the antireflective metasurface sample with a preliminary etching process treatment initiated 9.8 damage sites per mm 2 . In conclusion, these findings demonstrate that substrate-engraved metasurfaces are compatible with high energy and power laser applications, further broadening their application space.

36 MATERIALS SCIENCE↗

1.2-kV Vertical GaN PIN Rectifier With Ion-Implanted Floating Guard Rings

Here, this work reports on the fabrication and properties of a homojunction gallium nitride (GaN) p-i-n (PIN) rectifier fabricated on a free-standing GaN substrate. Uniform device performance is achieved with breakdown voltage (BV) >1.2 kV and low ON-resistance × area ( R ON A ). The statistics of the BV measurements show 58.5% of devices achieve BV >1.3 kV, and 71.1% of devices achieve BV >1.2 kV, as attributed to high quality and control in both epitaxial growth and device process. At room temperature, R ON A is 0.23 mΩ∙ cm 2 at a current density ( J ) of 6.9 kA/cm2. The corresponding Baliga’s figure of merit is >5.97 GW/cm 2 . Temperature-dependent reverse I – V measurements were performed and show a positive temperature coefficient of 0.42 V/K, indicating the avalanche capability of reverse breakdown. Further analysis with the Poole-Frenkel model on the temperature-dependent measurement suggested that a trap-assisted tunneling process contributed to the reverse leakage current. Floating guard rings (FGRs) formed by nitrogen implantation serve as an effective edge termination technique in these GaN PIN rectifiers, resulting in uniform performance in both forward and reverse bias.

42 ENGINEERING↗

Wide-field probing of silica laser-induced damage precursors by photoluminescence photochemical quenching

Here, we describe a wide-field approach to probe transient changes in photoluminescence (PL) of defects on silica surfaces. This technique allows simultaneous capture of spatially resolved PL with spontaneous quenching behavior. We attribute the quenching of PL intensity to photochemical reactions of surface defects and/or subsurface fractures with ambient molecules. Such quenching curves can be accurately reproduced by our theoretical model using two quenchable defect populations with different reaction rates. The fitting parameters of our model are spatially correlated to fractures in silica where point defects and mechanical stresses are known to be present, potentially indicating regions prone to laser-induced damage growth. We believe that our approach allows rapid spatial resolved identification of damage prone morphology, providing a new pathway to fast, non-destructive predictions of laser-induced damage growth.

47 OTHER INSTRUMENTATION↗

Few-cycle optical field breakdown and damage of gallium oxide and gallium nitride

Both gallium oxide and gallium nitride have great potential for use as high power transparent conducting oxide materials for a wide range of optoelectronic applications. It is, therefore, important to determine the dynamic optical field breakdown for these materials. Here, we report laser damage thresholds for Ga 2 O 3 and GaN using 9 fs few-cycle pulses with a center wavelength near 760 nm. We determine laser-induced damage thresholds (LIDTs) for both single pulse and multi-pulse exposures, with multi-pulse LIDT showing significant reduction compared to single pulse LIDT (in some cases, >50%), possibly due to laser-induced defects. We show that Ga 2 O 3 and GaN have an ultrafast optical field breakdown of 23 and 18 GV/m when nearly polarized along their [010] and [111] planes, respectively, extending their suitability for high power applications to the ultrashort pulse regime. To accurately characterize the excited carrier density criteria in which apparent laser damage occurs, carrier excitation dynamics for the entire laser pulse interaction were simulated using a modified Keldysh ionization model. For the measured single-shot threshold fluences, the plasma critical density was surpassed by 2 orders of magnitude and 2D finite-difference time-domain simulations were employed to understand the pulse interaction near the surface.

Tripepi, Michael↗

Channel Scaling Dependent Photoresponse of Copper-Based Flexible Photodetectors Fabricated Using Laser-Induced Oxidation

Copper (Cu) oxide compounds (Cu x O), which include cupric (CuO) and cuprous (Cu 2 O) oxide, have been recognized as a promising p-channel material with useful photovoltaic properties and superior thermal conductivity. Typically, deposition methods or thermal oxidation can be used to obtain Cu x O. However, these processes are difficult to apply to flexible substrates because plastics have a comparatively low glass transition temperature. Also, additional patterning steps are needed to fabricate applications. In this work, we fabricated a metal–semiconductor–metal photodetector using laser-induced oxidation of thin Cu films under ambient conditions. Raman spectroscopy, scanning electron microscopy–energy-dispersive X-ray spectroscopy, and atomic force microscopy were used to study the composition and morphology of our devices. Moreover, the photoresponse of this device is reported herein. We performed an in-depth analysis of the relationship between the channel size and number of carriers using scanning photocurrent microscopy. The carrier transport behaviors were identified; the photocurrent decreased as the length and width of the channel increased. Furthermore, we verified the suitability of the device as a flexible photodetector using a variety of bending tests. Our in-depth analysis of this Cu-based flexible photodetector could play an important role in understanding the mechanisms of other flexible photovoltaic applications.

36 MATERIALS SCIENCE↗

Large aperture and durable glass-engraved optical metasurfaces using nanoparticle etching masks: prospects and future directions

Abstract Metasurfaces (MSs), or surfaces consisting of engineered spatially oriented sub-wavelength elements—also known as meta-atoms—are quickly becoming a burgeoning field of interest due to their seemingly unparalleled control over the propagation of light. This article will discuss the emergence of a MS technology that is based on dewetting thin metal films to form dry etching masks for MS fabrication. The novelty this process presents is the ability to spatially vary mask features—which translates into spatially varying index of the finished surface—in a way that, rather than writing subwavelength elements one-by-one, writes entire areas at once to provide a route to easily scale the process up to meter-sized optics. Glass-engraved MSs have shown to be laser damage resistant, with damage thresholds close to the parent substrate damage thresholds. Furthermore, these surfaces have proven to be mechanically durable and capable of handling normal loads two orders of magnitude higher than that of an average fingerprint pressure. This indicates that accidental handling contact is not detrimental to the MS optical performance. Also discussed are the foreseeable technological challenges, potential solutions for those obstacles, and some currently unexplored directions for future efforts.

47 OTHER INSTRUMENTATION↗

Tuning Gold Nanoparticle Size with Fixed Interparticle Spacing in Large-Scale Arrays: Implications for Plasmonics and Nanoparticle Etching Masks

Gold nanoparticles play an important role in plasmonic arrays, including, but not limited to, photovoltaic, biomedical, sensing, optical, and catalytic applications. For plasmonic arrays, control over spatial variables of the array, such as nanoparticle size and spacing, must be judiciously cared for. In this work, we present here a multistep deposit/dewet process for nanoparticle ensemble fabrication that exploits thermally driven solid-state diffusional dewetting, coupled with Ostwald ripening, to tune the nanoparticle size or area coverage for a particular particle–particle spacing. The initial dewetting process defines the spatial period of the array, with subsequent dewetting steps growing the nanoparticles while adhering to the “seeded” period from the first dewetting. Following the fifth deposit/dewet cycle, relative to the first cycle, the mean nanoparticle height exhibited a percent increase of 90 and 66% for 5 and 7.5 nm multistep deposit/dewet processes, respectively, while minimally impacting the ensemble period. This provides unprecedented control over the spatial parameters of large-scale nanoparticle ensembles for plasmonic and etching-mask applications where a particular particle size and spacing are desired. Due to the simplicity of the technique and its area scalability, the cyclic deposition/dewetting process is shown here to be a method that can be easily scaled up to apply to large-area (up to meter-size) applications.

36 MATERIALS SCIENCE↗

Laser-induced digital oxidation for copper-based flexible photodetectors

Copper oxide compounds (Cu x O) with bandgaps of 1.3–2.1 eV (CuO) and 2.1–2.6 eV (Cu 2 O) have been investigated as promising p-type semiconducting materials. Cu x O is generally obtained by deposition or thermal oxidation, but those methods are not optimal for flexible substrates. Furthermore, additional patterning steps are required to fabricate devices. In this work, we present an easy, controllable method to fabricate a metal-semiconductor-metal (MSM) photodetector using laser-induced oxidation of a thin Cu film. After laser irradiation, the Cu film is heated under ambient conditions, and this leads to a thermal oxidation reaction, in which Cu oxide is monolithically formed in the Cu film and a Cu-Cu x O-Cu MSM structure is produced. Since the laser offers localized heating, an arbitrary CuxO pattern can be written in the Cu film by spatially controlled heating. In addition, by optimizing the heating time, the laser-induced oxidation can be successfully performed even on a flexible substrate. To study the laser-induced oxidation, we examined the correlation between laser parameters and the oxidation pattern and analyzed the composition using scanning electron microscopy, Raman spectroscopy, and X-ray photoemission spectroscopy. Furthermore, we measured the transient photoresponse and employed scanning photocurrent microscopy to investigate the mechanism of carrier transport behavior.

36 MATERIALS SCIENCE↗

Coupling buried etalon layers to an engraved metasurface for durable and large-aperture meta-optics

Many optical applications that could potentially benefit from the design flexibility provided by the metasurface approach are being prohibited by the limited scalability of the fabrication and the robustness of the end-result structures when using a resonant meta-elements-based approach. In this study, an alternative demonstrated approach with superior scalability and robustness is substrate-engraved metasurfaces, based on medium mixing homogenization, yet it suffers from very limited optical response. Here we propose advancing this approach by coupling the metasurface with buried etalon layers, leading to enhancement in the optical response. A transfer matrix analysis is used to study the parameter space, predicting that the patterned reflectance values range of a beam shaper could be raised from only 4% to 30% when the metasurface is engraved in silica, and even up to 66% when engraved into higher-index oxides. Using the method proposed here, the phase difference range across the metasurface could be increased by 0.4 radians beyond the range achievable by a metasurface engraved in silica and could reach even higher values when embedded in higher-index materials. Full-wave numerical simulations are used to demonstrate a cylindrical metareflector and a metalens, further validating the analysis.

47 OTHER INSTRUMENTATION↗