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Young, B. A.

Publications and source records attributed to Young, B. A..

Observation of Long-Lived UV-Induced Fluorescence from Environmental Materials Using the HVeV Detector as Developed for SuperCDMS

Here, we describe recent experiments using a SuperCDMS HVeV single-charge sensitive detector illuminated with an ultraviolet LED (275 nm) and a monochromatic laser(650 nm) using a dual fiber optic system installed in a small dilution refrigerator at Stanford University. We observed a population of fluorescence background events after UV exposure but not after exposure to the laser source. The fluorescence was likely due to scattered UV photons absorbed outside the detector. We discuss the possibility of fluorescence being a contributor to the low energy excess background observed in above-ground Dark Matter experiments.

36 MATERIALS SCIENCE↗

Photoelectric absorption cross section of silicon near the bandgap from room temperature to sub-Kelvin temperature

The use of cryogenic silicon as a detector medium for dark matter searches is gaining popularity. Many of these searches are highly dependent on the value of the photoelectric absorption cross section of silicon at low temperatures, particularly near the silicon bandgap energy, where the searches are most sensitive to low mass dark matter candidates. While such cross section data have been lacking from the literature, previous dark matter search experiments have attempted to estimate this parameter by extrapolating it from higher temperature data. However, discrepancies in the high temperature data have led to order-of-magnitude differences in the extrapolations. In this paper, we resolve these discrepancies by using a novel technique to make a direct, low temperature measurement of the photoelectric absorption cross section of silicon at energies near the bandgap (1.2 eV–2.8 eV).

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗

High-field spatial imaging of charge transport in silicon at low temperature

We present direct imaging measurements of charge transport across a 1 cm × 1 cm × 4 mm-thick crystal of high purity silicon (~15 kΩ-cm) at temperatures of 5 K and 500 mK. We use these data to measure lateral diffusion of electrons and holes as a function of the electric field applied along the [111] crystal axis and to verify our low-temperature Monte Carlo software. The range of field strengths in this paper exceed those used in our previous study [R. A. Moffatt et al., Appl. Phys. Lett. 114, 032104 (2019)] by a factor of 10 and now encompass the region in which some recent silicon dark matter detectors operate [R. Agnese et al., Phys. Rev. Lett. 121, 051301 (2018)]. Finally, we also report on a phenomenon of surface charge trapping, which can reduce expected charge collection.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗

Modeling of Impact Ionization and Charge Trapping in SuperCDMS HVeV Detectors

A model for charge trapping and impact ionization, and an experiment to measure these parameters is presented for the SuperCDMS HVeV detector. A procedure to isolate and quantify the main sources of noise (bulk and surface charge leakage) in the measurements is also describe. This sets the stage to precisely measure the charge trapping and impact ionization probabilities in order to incorporate this model into future dark matter searches.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗

Search for Low-Mass Dark Matter with CDMSlite Using a Profile Likelihood Fit

The Cryogenic Dark Matter Search low ionization threshold experiment (CDMSlite) searches for interactions between dark matter particles and germanium nuclei in cryogenic detectors. The experiment has achieved a low energy threshold with improved sensitivity to low-mass (<10 GeV/c2) dark matter particles. We present an analysis of the final CDMSlite data set, taken with a different detector than was used for the two previous CDMSlite data sets. This analysis includes a data "salting" method to protect against bias, improved noise discrimination, background modeling, and the use of profile likelihood methods to search for a dark matter signal in the presence of backgrounds. We achieve an energy threshold of 70 eV and significantly improve the sensitivity for dark matter particles with masses between 2.5 and 10 GeV/c2 compared to previous analyses. We set an upper limit on the dark matter-nucleon scattering cross section in germanium of 5.4×10-42 cm2 at 5 GeV/c2, a factor of ~2.5 improvement over the previous CDMSlite result.

Agnese, R↗

Spatial imaging of charge transport in silicon at low temperature

Here, we present direct imaging measurements of charge transport across a 1cm x 1cm x 4mm crystal of high purity silicon (~20kΩ cm) at temperatures between 500 mK and 5K.We use these data to determine the intervalley scattering rate of electrons as a function of the electric field applied along the $\langle$111$\rangle$ crystal axis, and we present a phenomenological model of intervalley scattering which explains the constant scattering rate seen at low-voltage for cryogenic temperatures. We also demonstrate direct imaging measurements of effective hole mass anisotropy, which is strongly dependent on both temperature and electric field strength. The observed effects can be explained by a warping of the valence bands for carrier energies near the spin-orbit splitting energy in silicon.

36 MATERIALS SCIENCE↗

Error-Correcting Codes for Code-Division Multiplexed TES Detectors

Transition edge sensors (TESs) have proven to be highly sensitive and versatile X-ray spectrometers. Upcoming missions, including Athena X-IFU, will rely on highly multiplexed focal planes where more than 32 TES pixels are read out using a single SQUID amplifier channel. We have implemented an error correction algorithm for code-division multiplexed TES signals that can compensate for potential failures of individual SQUID readout channels and that is both scalable and easily implemented in hardware. We present this algorithm for error correction and show results of laboratory tests to assess algorithm performance at recovering TES channels after a SQUID failure.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗

A Spread-Spectrum SQUID Multiplexer

The transition-edge sensor (TES) is a mature, high-resolution x-ray spectrometer technology that provides a much higher efficiency than dispersive spectrometers such as gratings and crystal spectrometers. As larger arrays are developed, time-division multiplexing schemes operating at MHz frequencies are being replaced by microwave SQUID multiplexers using frequency-division multiplexing at GHz frequencies. However, the multiplexing factor achievable with microwave SQUIDs is limited by the high slew rate on the leading edge of x-ray pulses. In this paper, we propose a new multiplexing scheme for high-slew-rate TES x-ray calorimeters: the spread-spectrum SQUID multiplexer, which has the potential to enable higher multiplexing factors, especially in applications with lower photon-arrival rates.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗