Young, Matthew R. | Search NASA

DOE OSTI2022

AlInP-passivated III–V solar cells grown by dynamic hydride vapor-phase epitaxy

We report the development of AlInP-passivated solar cells grown by dynamic hydride vapor-phase epitaxy (D-HVPE) with AM1.5G efficiencies of 26.0% for single-junction (1J) GaAs cells and 28.0% for GaInP/GaAs (2J) tandems. We compare the device performance of solar cells passivated with AlInP versus control cells passivated with GaInP, which has already enabled near-unity carrier collection in GaAs solar cells. 1J devices passivated with either AlInP or GaInP have an identical open-circuit voltage (V OC ) of 1.06 V and long-wavelength current collection near 95%, indicating that both window materials provide a similar degree of passivation. Adding AlInP passivation to each solar cell structure improves the current collection by 1.3 and 1 mA/cm 2 for the 1J and 2J, respectively. The AlInP also results in a top cell V OC boost of ~40 mV relative to a tandem device passivated only by a thin, highly doped GaInP emitter. Secondary-ion mass spectrometry measurements indicate that although O and Si both incorporate in the AlInP window, they do not appear in the subsequently grown absorber layers and do not impact its ability to passivate the front surface. We expect that these achievements, along with continued optimization, will enable parity of hydride vapor-phase epitaxy (HVPE)-grown device efficiencies with state-of-the-art devices grown by other epitaxial methods in the near future.

14 SOLAR ENERGY↗

DOE OSTI2022

Setting boundaries on the recipe for a successful RbF post-deposition treatment of CIGS

RbF post-deposition treatments have been explored in the literature for increasing the open-circuit voltage, fill factor, and hence the efficiency of Cu(In,Ga)Se 2 solar cells. However, given the few papers documenting the experimental steps, it was difficult to quickly reproduce the results. This contribution describes some of the optimization steps that led to a successful RbF PDT based on device performance. Here we present results that put boundaries on the temperatures of the RbF cell and the lamp (for sample heating) setpoint. The best recipe for our specific growth process is documented in detail so that others may copy the procedure and possibly arrive at a successful RbF PDT in a reasonable time.

14 SOLAR ENERGY↗

DOE OSTI2022

Potential-induced degradation of Cu(In,Ga)Se 2 can occur by shunting the front i-ZnO and by damaging the p-n junction

In this work we test field-relevant potential-induced degradation (PID) behavior by encapsulating laboratory Cu(In,Ga)Se 2 (CIGS) solar cells and applying +1000 V uniformly on the face of the front glass. In this configuration, we find that K-rich borosilicate glass reduces the extent of PID relative to Na-rich soda-lime glass. We also find that the standard testing protocol of stressing cells at short-circuit leads to faster PID than stressing cells at open-circuit. We characterize two types of CIGS PID: The first, front shunting PID, is driven by front-glass stress and occurs when alkali metal cations accumulate in the i-ZnO buffer, where they increase shunt conductance to reduce fill factor. The second, p-n junction PID, results from back-glass stress as alkali metal cations pile up near the CIGS surface/CdS buffer, where they reduce charge carrier concentration, open-circuit voltage, and fill factor to degrade efficiency ~160 times faster than front shunting PID.

14 SOLAR ENERGY↗

DOE OSTI2021

Improvement of Front-Junction GaInP by Point-Defect Injection and Annealing: Preprint

Traditional front junction GaInP solar cells are radiation tolerant and can have good diffusion length, but have limited voltage and thus efficiency. Here, we investigate the impact of annealing on GaInP device performance. First, Zn-doped GaInP/AlGaInP double heterojunction structures are studied in order to investigate the impact of annealing in a simple structure. While standard anneals lower diffusion length and lifetime, annealing after injecting point-defects improves material quality, presumably by eliminating sources of non-radiative recombination. Atomic ordering is reduced by the anneal, which raises the device bandgap and requires consideration. These results can be used to improve front junction device performance while controlling the bandgap. Then, GaInP front-junction devices are created using anneals with and without point-defect injection. Voc and EQE trends follow the diffusion length and lifetime trends from the DH structures. Baseline devices have Woc of 0.484 V, raising to 0.504 V after a high temperature anneal. However, injecting point defects prior to the anneal results in a front junction device with Woc of 0.405 V and a diffusion length greater than 8 micrometers. Optimized front-junction GaInP devices with an ARC have ~20% efficiency without a rear reflector.

anneal↗

DOE OSTI2021

Inverted metamorphic GaInAs solar cell grown by dynamic hydride vapor phase epitaxy

We present an inverted metamorphic rear heterojunction ~1.0 eV GaInAs solar cell deposited by dynamic hydride vapor phase epitaxy (D-HVPE) with high growth rate. This device uses a Ga 1-x In x P compositionally graded buffer (CGB) to bridge the lattice constant gap between the GaAs substrate and the Ga0.71In0.29As emitter layer. High-resolution x-ray diffraction and transmission electron microscopy confirm that the Ga 0.71 In 0.29 As emitter is grown lattice-matched to the in-plane lattice constant of the CGB with minimal generation of defects at the GaInAs/GaInP interface. The device contains a threading dislocation density of 2.3 × 10 6 cm -2 , a level that enables high-performance minority carrier devices and is comparable to previously demonstrated GaInP CGBs grown by D-HVPE. The device exhibits an open-circuit voltage of 0.589 V under a one-sun AM1.5G illumination condition and a bandgap-voltage offset of 0.407 V, indicating metamorphic epitaxial performance nearly equal to state-of-the-art devices. We analyze the dark current of the device and determine that reducing recombination in the depletion region, which can be achieved by reducing the threading dislocation density and optimizing the device doping density, will improve the device performance. Furthermore, the CGB and device layers, comprising ~8 µm of thickness, are grown in under 10 min, highlighting the ability of D-HVPE to produce high-quality metamorphic devices of all types with the potential for dramatically higher throughput compared to present technology.

14 SOLAR ENERGY↗

DOE OSTI2021

Improvement of Front-Junction GaInP by Point-Defect Injection and Annealing

Traditional front junction GaInP solar cells are radiation tolerant and can have good diffusion length, but have limited voltage and thus efficiency. Here, we investigate the impact of annealing on GaInP device performance. First, Zn-doped GaInP/AlGaInP double heterojunction structures are studied in order to investigate the impact of annealing in a simple structure. While standard anneals lower diffusion length and lifetime, annealing after injecting point-defects improves material quality, presumably by eliminating sources of non-radiative recombination. Atomic ordering is reduced by the anneal, which raises the device bandgap and requires consideration. These results can be used to improve front junction device performance while controlling the bandgap. Then, GaInP front-junction devices are created using anneals with and without point-defect injection. Voc and EQE trends follow the diffusion length and lifetime trends from the DH structures. Baseline devices have Woc of 0.484 V, raising to 0.504 V after a high temperature anneal. However, injecting point defects prior to the anneal results in a front junction device with Woc of 0.405 V and a diffusion length greater than 8 micrometers. Optimized front-junction GaInP devices with an ARC have ~20% efficiency without a rear reflector.

anneal↗

DOE OSTI2021

Design and Demonstration of AlxIn1-xP Multiple Quantum Well Light-Emitting Diodes

Direct bandgap AlxIn1-xP alloys offer an advantage for red and amber light-emitting diode (LED) operation over conventional (AlxGa1-x)0.5In0.5P alloys due to their higher direct bandgap energies. However, the coupled variation of its bandgap energy and lattice constant present challenges for fabricating quantum well-based LED devices on GaAs substrates. Here, we present the design and demonstration of AlxIn1-xP red and amber LEDs incorporating multiple quantum well structures. Strain balancing the quantum well layers and manipulating the AlxIn1-xP conduction band energy through control of spontaneous atomic ordering produce structures with higher electron confinement barriers than comparable (AlxGa1-x)0.5In0.5P LEDs. We also discuss future improvements that must be made to realize high efficiency red and amber LEDs.

36 MATERIALS SCIENCE↗

DOE OSTI2020

Six-junction III–V solar cells with 47.1% conversion efficiency under 143 Suns concentration

Single-junction flat-plate terrestrial solar cells are fundamentally limited to about 30% solar-to-electricity conversion efficiency, but multiple junctions and concentrated light make much higher efficiencies practically achievable. Until now, four-junction III–V concentrator solar cells have demonstrated the highest solar conversion efficiencies. Here, we demonstrate 47.1% solar conversion efficiency using a monolithic, series-connected, six-junction inverted metamorphic structure operated under the direct spectrum at 143 Suns concentration. Furthermore, when tuned to the global spectrum, a variation of this structure achieves a 1-Sun global efficiency of 39.2%. Nearly optimal bandgaps for six junctions were fabricated using alloys of III–V semiconductors. To develop these junctions, it was necessary to minimize threading dislocations in lattice-mismatched III–V alloys, prevent phase segregation in metastable quaternary III–V alloys and understand dopant diffusion in complex structures. Further reduction of the series resistance within this structure could realistically enable efficiencies over 50%.

14 SOLAR ENERGY↗