Search NASA⌕ Search

Engineering topics

Zaluzec, N J

Publications and source records attributed to Zaluzec, N J.

7 records
All sourcesNASA NTRSDOE OSTI
DOE OSTI2010

Extracting physically interpretable data from electron energy-loss spectra.

Principal component analysis is routinely applied to analyze data sets in electron energy-loss spectroscopy (EELS). We show how physically meaningful spectra can be obtained from the principal components using a knowledge of the scattering of the probe electron and the geometry of the experiment. This approach is illustrated by application to EELS data for the carbon K edge in graphite obtained using a conventional transmission electron microscope. The effect of scattering of the probe electron is accounted for, yielding spectra which are equivalent to experiments using linearly polarized X-rays. The approach is general and can also be applied to EELS in the context of scanning transmission electron microscopy.

36 MATERIALS SCIENCE↗
DOE OSTI2010

Ion-beam irradiation of lanthanum compounds in the systems La{sub 2}O{sub 3}-Al{sub 2}O{sub 3} and La{sub 2}O{sub 3}-TiO{sub 2}

Thin crystals of La{sub 2}O{sub 3}, LaAlO{sub 3}, La{sub 2/3}TiO{sub 3}, La{sub 2}TiO{sub 5}, and La{sub 2}Ti{sub 2}O{sub 7} have been irradiated in situ using 1 MeV Kr{sup 2+} ions at the Intermediate Voltage Electron Microscope-Tandem User Facility (IVEM-Tandem), Argonne National Laboratory (ANL). We observed that La{sub 2}O{sub 3} remained crystalline to a fluence greater than 3.1x10{sup 16} ions cm{sup -2} at a temperature of 50 K. The four binary oxide compounds in the two systems were observed through the crystalline-amorphous transition as a function of ion fluence and temperature. Results from the ion irradiations give critical temperatures for amorphisation (T{sub c}) of 647 K for LaAlO{sub 3}, 840 K for La{sub 2}Ti{sub 2}O{sub 7}, 865 K for La{sub 2/3}TiO{sub 3}, and 1027 K for La{sub 2}TiO{sub 5}. The T{sub c} values observed in this study, together with previous data for Al{sub 2}O{sub 3} and TiO{sub 2}, are discussed with reference to the melting points for the La{sub 2}O{sub 3}-Al{sub 2}O{sub 3} and La{sub 2}O{sub 3}-TiO{sub 2} systems and the different local environments within the four crystal structures. Results suggest that there is an observable inverse correlation between T{sub c} and melting temperature (T{sub m}) in the two systems. More complex relationships exist between T{sub c} and crystal structure, with the stoichiometric perovskite LaAlO{sub 3} being the most resistant to amorphisation. - Graphical abstract: La{sub 2}TiO{sub 5} with atypical co-ordination for Ti, TiO{sub 5} is found to be different in radiation resistance to La{sub 2}Ti{sub 2}O{sub 7} and La{sub 2/3}TiO{sub 3}. Irradiation of La-Ti-O, and La-Al-O based systems has found that radiation damage resistance is related to the ability of the system to disorder.

36 MATERIALS SCIENCE↗
DOE OSTI2010

III-nitride nanopyramid light emitting diodes grown by organometallic vapor phase epitaxy.

Nanopyramid light emitting diodes (LEDs) have been synthesized by selective area organometallic vapor phase epitaxy. Self-organized porous anodic alumina is used to pattern the dielectric growth templates via reactive ion etching, eliminating the need for lithographic processes. (In,Ga)N quantum well growth occurs primarily on the six {l_brace}1{bar 1}01{r_brace} semipolar facets of each of the nanopyramids, while coherent (In,Ga)N quantum dots with heights of up to {approx}20 nm are incorporated at the apex by controlling growth conditions. Transmission electron microscopy (TEM) indicates that the (In,Ga)N active regions of the nanopyramid heterostructures are completely dislocation-free. Temperature-dependent continuous-wave photoluminescence of nanopyramid heterostructures yields a peak emission wavelength of 617 nm and 605 nm at 300 K and 4 K, respectively. The peak emission energy varies with increasing temperature with a double S-shaped profile, which is attributed to either the presence of two types of InN-rich features within the nanopyramids or a contribution from the commonly observed yellow defect luminescence close to 300 K. TEM cross-sections reveal continuous planar defects in the (In,Ga)N quantum wells and GaN cladding layers grown at 650-780 C, present in 38% of the nanopyramid heterostructures. Plan-view TEM of the planar defects confirms that these defects do not terminate within the nanopyramids. During the growth of p-GaN, the structure of the nanopyramid LEDs changed from pyramidal to a partially coalesced film as the thickness requirements for an undepleted p-GaN layer result in nanopyramid impingement. Continuous-wave electroluminescence of nanopyramid LEDs reveals a 45 nm redshift in comparison to a thin-film LED, suggesting higher InN incorporation in the nanopyramid LEDs. These results strongly encourage future investigations of III-nitride nanoheteroepitaxy as an approach for creating efficient long wavelength LEDs.

36 MATERIALS SCIENCE↗
DOE OSTI2010

Substantial crystalline topology in amorphous silicon.

Using electron correlograph analysis we show that coherent nanodiffraction patterns from sputtered amorphous silicon indicate that there is more local crystallinity in unannealed amorphous silicon than was previously suspected. By comparing with simulations for various models we show that within a typical unannealed amorphous silicon film a substantial volume fraction (>50%) is topologically crystalline with correlation lengths up to 2 nm. Electron correlograph analysis is a variant of the fluctuation electron microscopy technique and its sensitivity to local crystalline ordering is derived from its sensitivity to four-body correlations.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗