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Zamperini, S.

Publications and source records attributed to Zamperini, S..

Modeling turbulent impurity transport in the SOL of DIII-D with a reduced model

A novel impurity transport model that approximates SOL turbulence as a fluctuating poloidal electric field is shown to be an acceptable replacement for the traditional approach of assigning an arbitrary radial diffusion coefficient to the impurity ions. The model is implemented in the DIVIMP impurity transport code and applied to an L-Mode tungsten divertor experiment on DIII-D. The poloidal electric field is represented as fluctuating between ±1000 V m –1 based on previous measurements. The resulting intermittent v r = E θ × B T transport causes ions to transport both into the core as well as into the far-SOL. Simultaneous agreement with estimates of the W density just inside the separatrix as well as in the far-SOL is obtained (n W ~ 10 14 m –3 and n W ~ 10 12 m –3 , respectively). Prompt re-deposition of the W ions was necessary to obtain agreement (f redep ~ 99%). Here, we conclude that simulating impurity transport using a physics-based approximation for turbulence in the SOL, versus arbitrarily assigning diffusion coefficients, may enable better reactor scale predictions of core impurity contamination.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗

SiC as a core-edge integrated wall solution in DIII-D

Silicon carbide (SiC) is a promising material for use in a fusion reactor due to its low hydrogenic diffusivity, high temperature strength and resilience under neutron irradiation. To assess SiC as a main wall material in DIII-D, simulations with TRIM.SP and DIVIMP are performed on a well-diagnosed L-mode discharge. The effective charge, Z eff , across the separatrix is used as a figure of merit in comparing SiC to the current graphite walls. It is found that SiC is expected to reduce Z eff , potentially by as much as ~50%. It is discussed how SiC may be expected to "self-condition" and create wall conditions similar to siliconization, further lowering Z eff due to efficient oxygen gettering. Furthermore, the potential benefits are reviewed and a path towards SiC walls in DIII-D is presented.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗