Engineering topics

Zeller, John W.

Publications and source records attributed to Zeller, John W..

5 records

NASA NTRS2020

Development of High-Performance Graphene-HgCdTe Detector Technology for Mid-Wave Infrared Applications

A high-performance graphene-based HgCdTe detector technology is being developed for sensing over the mid-wave infrared (MWIR) band for NASA Earth Science, defense, and commercial applications. This technology involves the integration of graphene into HgCdTe photodetectors that combines the best of both materials and allows for higher MWIR(2-5 m) detection performance compared to photodetectors using only HgCdTe material. The interfacial barrier between the HgCdTe-based absorber and the graphene layer reduces recombination of photogenerated carriers in the detector. The graphene layer also acts as high mobility channel that whisks away carriers before they recombine, further enhancing the detector performance. Likewise, HgCdTe has shown promise for the development of MWIR detectors with improvements in carrier mobility and lifetime. The room temperature operational capability of HgCdTe-based detectors and arrays can help minimize size, weight, power and cost for MWIR sensing applications such as remote sensing and earth observation, e.g., in smaller satellite platforms. The objective of this work is to demonstrate graphene-based HgCdTe room temperature MWIR detectors and arrays through modeling, material development, and device optimization. The primary driver for this technology development is the enablement of a scalable, low cost, low power, and small footprint infrared technology component that offers high performance, while opening doors for new earth observation measurement capabilities.

Sood, Ashok K.↗

NASA NTRS2019

GaN/AlGaN Avalanche Photodiode Detectors for High Performance Ultraviolet Sensing Applications

The shorter wavelengths of the ultraviolet (UV) band enable detectors to operate with increased spatial resolution, variable pixel sizes, and large format arrays, benefitting a variety of NASA, defense, and commercial applications. AlxGa1-xN semiconductor alloys, which have attracted much interest for detection in the UV spectral region, have been shown to enable high optical gains, high sensitivities with the potential for single photon detection, and low dark current performance in ultraviolet avalanche photodiodes (UV-APDs). We are developing GaN/AlGaN UV-APDs with large pixel sizes that demonstrate consistent and uniform device performance and operation. These UV-APDs are fabricated through high quality metal organic chemical vapor deposition (MOCVD) growth on lattice-matched, low dislocation density GaN substrates with optimized material growth and doping parameters. The use of these low defect density substrates is a critical element to realizing highly sensitive UV-APDs and arrays with suppressed dark current under high electric fields.Optical gains greater than 5X10 (exp 6) with enhanced quantum efficiencies over the 350-400 nm spectral range have been demonstrated, enabled by a strong avalanche multiplication process. Furthermore, we are developing 6X6 arrays of devices to test high gain UV-APD array performance at ~355 nm. These variable-area GaN/AlGaN UV-APD detectors and arrays enable advanced sensing performance over UV bands of interest with high resolution detection for NASA Earth Science applications.

Sood, Ashok K.↗

NASA NTRS2019

Development of High-Performance Detector Technology for UV and IR Applications

Sensing and imaging for ultraviolet (UV) and infrared (IR) bands has many applications for NASA, defense, and commercial systems. Recent work has involved developing UV avalanche photodiode (UVAPD) arrays with high gain for high resolution imaging. Various GaN/AlGaN p-i-n UV-APDs have been fabricated from epitaxial structures grown by metalorganic chemical vapor deposition (MOCVD) on GaN substrates with avalanche gains greater than 5×105, and high responsivities. Similarly, the IR spectral band is useful for measuring ocean temperatures, atmospheric aerosols, forest fires, etc. We are also developing room temperature operating graphene-enhanced PbSe midwave infrared (MWIR) detectors and focal plane arrays (FPAs). These compact and low-cost MWIR sensors can benefit various NASA remote sensing applications. Here we present recent results from these high performance UV- and IR-band detector and FPA technologies.

Sood, Ashok K.↗

NASA NTRS2019

High Performance GaN/AlGaN Ultraviolet Avalanche Photodiode Detector Technologies

Detection of ultraviolet (UV) bands provides distinct advantages for NASA, defense, and commercial applications, including increased spatial resolution, small pixel sizes, and large format arrays. AlxGa1-xN semiconductor alloys have attracted great interest for detection in the UV spectral region because of their potential for high optical gain, high sensitivity, and low dark current performance in ultraviolet avalanche photodiodes (UV-APDs). We are developing GaN/AlGaN UV-APDs that demonstrate consistent and reliable UV-APD performance and operation. For these UV detectors we have measured gains of above 5×10(exp 6) and high quantum efficiencies at ~350 nm enabled by a strong avalanche multiplication process. These UV-APDs are fabricated through high quality metal organic chemical vapor deposition (MOCVD) growth on lattice-matched, low dislocation density GaN substrates with optimized GaN/AlGaN UV-APD material growth and doping parameters. The high performance, variable-area GaN/AlGaN UV-APD detectors and arrays can be customized to a wide variety of sizes including large-area formats to enable sensing and high-resolution detection over UV bands of interest.

Sood, Ashok K.↗

NASA NTRS2018

Development of High Performance Detector Technology for UV and Near IR Applications

Sensing and imaging for ultraviolet (UV) and nearinfrared (NIR) bands has many applications forNASA, defense, and commercial systems. Recentwork has involved developing UV avalanchephotodiode (UV-APD) arrays with high gain for highresolution imaging. Various GaN/AlGaN p-i-n (PIN)UV-APDs have been fabricated from epitaxialstructures grown by MOCVD on GaN substrates withavalanche gains higher than 5 x 10(exp 5), and significantlyhigher responsivities. Likewise, the SiGe materialsystem allows the demonstration of high-performancedetector array technology that covers the 0.5 to 1.7 mwavelength range for visible and NIR bands ofinterest. We have utilized SiGe fabrication technologyto develop Ge based PIN detector devices on 300 mmSi wafers. We will discuss the theoretical andexperimental results from electrical and opticalcharacterization of the detector devices with variousn+ region doping concentrations to demonstrate low dark currents below 1 uA at -1 V and high photocurrent. Recent results from these detectorarrays for UV and NIR detection will be presented.

IR↗