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Zhang, Enze

Publications and source records attributed to Zhang, Enze.

Improved modeling of detector response effects in phonon-based crystal detectors used for dark matter searches

Various dark matter search experiments employ phonon-based crystal detectors operated at cryogenic temperatures. Some of these detectors, including certain silicon detectors used by the SuperCDMS Collaboration, are able to achieve single-charge sensitivity when a voltage bias is applied across the detector. The total amount of phonon energy measured by such a detector is proportional to the number of electron-hole pairs created by the interaction. However, crystal impurities and surface effects can cause propagating charges to either become trapped inside the crystal or create additional unpaired charges, producing non-quantized measured energy as a result. A new analytical model for describing these detector response effects in phonon-based crystal detectors is presented. This model improves upon previous versions by demonstrating how the detector response, and thus the measured energy spectrum, is expected to differ depending on the source of events. Finally, we use this model to extract detector response parameters for SuperCDMS HVeV detectors, and illustrate how this robust modelling can help statistically discriminate between sources of events in order to improve the sensitivity of dark matter search experiments.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗

Tuning 2D magnetism in Fe 3+X GeTe 2 films by element doping

Two-dimensional (2D) ferromagnetic materials have been discovered with tunable magnetism and orbital-driven nodal-line features. Controlling the 2D magnetism in exfoliated nanoflakes via electric/magnetic fields enables a boosted Curie temperature (T C ) or phase transitions. One of the challenges, however, is the realization of high T C 2D magnets that are tunable, robust and suitable for large scale fabrication. Here, we report molecular-beam epitaxy growth of wafer-scale Fe 3+X GeTe 2 films with T C above room temperature. By controlling the Fe composition in Fe 3+X GeTe 2 , a continuously modulated T C in a broad range of 185–320 K has been achieved. This widely tunable T C is attributed to the doped interlayer Fe that provides a 40% enhancement around the optimal composition X = 2. We further fabricated magnetic tunneling junction device arrays that exhibit clear tunneling signals. Our results show an effective and reliable approach, i.e. element doping, to producing robust and tunable ferromagnetism beyond room temperature in a large-scale 2D Fe 3+X GeTe 2 fashion.

2D ferromagnetic material↗