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Zhang, Fengyan

Publications and source records attributed to Zhang, Fengyan.

Optimization of sputtering NiOx films for perovskite solar cell applications

Highlights: • NiO{sub x} HTLs were fabricated by three kinds of magnetron sputtering techniques. • Chemical composition, lattice strain and energy levels of NiO{sub x} films were studied and compared. • PSCs based on sputtered NiO{sub x} HTL achieved highest PCE of 16.3% with negligible hysteresis. • Compared with PEDOT:PSS HTL, PSCs based on NiO{sub x} HTL exhibited enhanced stability in air. - Abstract: In this work, we systematically investigated the properties of three kinds of NiO{sub x} films prepared by magnetron sputtering either NiO or Ni target under direct current (DC) or radio frequency (RF) power without any preheating. Those NiO{sub x} films were found to be different in composition ratios, lattice strain and energy levels, thus showing different optical and carrier transport properties. By RF power source, sputtering Ni target in pure O{sub 2} atmosphere led to NiO{sub x} film with relatively good crystallization and surface properties compared with other two types of NiO{sub x} films. These NiO{sub x} films were further introduced into CH{sub 3}NH{sub 3}PbI{sub 3} based planar p-i-n heterojunction perovskite solar cells (PSCs) as the hole transport layers (HTL). It is revealed that PSCs based on NiO{sub x} HTL prepared by sputtering Ni target in pure O{sub 2} atmosphere achieved a highest power conversion efficiency of 16.3% with negligible hysteresis. Compared with devices with PEDOT:PSS HTL, PSCs based on magnetron sputtered NiO{sub x} HTL presented substantially improved stability in air. The results provide theoretical and experimental guidance on selecting NiO{sub x} HTLs fabricated by magnetron sputtering techniques.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Methods for forming particles

Single source precursors or pre-copolymers of single source precursors are subjected to microwave radiation to form particles of a I-III-VI.sub.2 material. Such particles may be formed in a wurtzite phase and may be converted to a chalcopyrite phase by, for example, exposure to heat. The particles in the wurtzite phase may have a substantially hexagonal shape that enables stacking into ordered layers. The particles in the wurtzite phase may be mixed with particles in the chalcopyrite phase (i.e., chalcopyrite nanoparticles) that may fill voids within the ordered layers of the particles in the wurtzite phase thus produce films with good coverage. In some embodiments, the methods are used to form layers of semiconductor materials comprising a I-III-VI.sub.2 material. Devices such as, for example, thin-film solar cells may be fabricated using such methods.

14 SOLAR ENERGY↗