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Zhang, Hanyu

Publications and source records attributed to Zhang, Hanyu.

At least 19 records
All sourcesNASA NTRSDOE OSTI
DOE OSTI2024

Manifold Learning: What, How, and Why

Manifold learning (ML), also known as nonlinear dimension reduction, is a set of methods to find the low-dimensional structure of data. Dimension reduction for large, high-dimensional data is not merely a way to reduce the data; the new representations and descriptors obtained by ML reveal the geometric shape of high-dimensional point clouds and allow one to visualize, denoise, and interpret them. This review presents the underlying principles of ML, its representative methods, and their statistical foundations, all from a practicing statistician's perspective. It describes the trade-offs and what theory tells us about the parameter and algorithmic choices we make in order to obtain reliable conclusions.

Mathematics↗
DOE OSTI2024

Actuating Liquid Crystals Rapidly and Reversibly by Using Chemical Catalysis

Abstract Microtubules and catalytic motor proteins underlie the microscale actuation of living materials, and they have been used in reconstituted systems to harness chemical energy to drive new states of organization of soft matter (e.g., liquid crystals (LCs)). Such materials, however, are fragile and challenging to translate to technological contexts. Rapid (sub‐second) and reversible changes in the orientations of LCs at room temperature using reactions between gaseous hydrogen and oxygen that are catalyzed by Pd/Au surfaces are reported. Surface chemical analysis and computational chemistry studies confirm that dissociative adsorption of H 2 on the Pd/Au films reduces preadsorbed O and generates 1 ML of adsorbed H, driving nitrile‐containing LCs from a perpendicular to a planar orientation. Subsequent exposure to O 2 leads to oxidation of the adsorbed H, reformation of adsorbed O on the Pd/Au surface, and a return of the LC to its initial orientation. The roles of surface composition and reaction kinetics in determining the LC dynamics are described along with a proof‐of‐concept demonstration of microactuation of beads. These results provide fresh ideas for utilizing chemical energy and catalysis to reversibly actuate functional LCs on the microscale.

Chemistry↗
DOE OSTI2023

The DESI One-Percent Survey: exploring a generalized SHAM for multiple tracers with the UNIT simulation

We perform SubHalo Abundance Matching (SHAM) studies on UNIT simulations with {σ, V ceil , v smear }-SHAM and {σ, V ceil , $f$ sat }-SHAM. They are designed to reproduce the clustering on 5–30 h -1 Mpc of luminous red galaxies (LRGs), emission-line galaxies (ELGs), and quasi-stellar objects (QSOs) at 0.4 < z < 3.5 from DESI (Dark Energy Spectroscopic Instrument) One Percent Survey. V ceil is the incompleteness of the massive host (sub)haloes and is the key to the generalized SHAM. v smear models the clustering effect of redshift uncertainties, providing measurements consistent with those from repeat observations. A free satellite fraction $f$ sat is necessary to reproduce the clustering of ELGs. We find ELGs present a more complex galaxy–halo mass relation than LRGs reflected in their weak constraints on σ. LRGs, QSOs, and ELGs show increasing V ceil values, corresponding to the massive galaxy incompleteness of LRGs, the quenched star formation of ELGs and the quenched black hole accretion of QSOs. For LRGs, a Gaussian v smear presents a better profile for subsamples at redshift bins than a Lorentzian profile used for other tracers. The impact of the statistical redshift uncertainty on ELG clustering is negligible. The best-fitting satellite fraction for DESI ELGs is around 4 per cent, lower than previous estimations for ELGs. The mean halo mass log 10 ($\langle$M vir $\rangle$) in h -1 M ⊙ for LRGs, ELGs, and QSOs are 13.16 ± 0.01, 11.90 ± 0.06, and 12.66 ± 0.45, respectively. Our generalized SHAM algorithms facilitate the production of multitracer galaxy mocks for cosmological tests.

79 ASTRONOMY AND ASTROPHYSICS↗
DOE OSTI2023

The DESI One-Percent survey: exploring the Halo Occupation Distribution of Emission Line Galaxies with AbacusSummit simulations

The One-Percent survey of the Dark Energy Spectroscopic Instrument collected ~ 270k emission line galaxies (ELGs) at 0.8 < z < 1.6. The high completeness of the sample allowed the clustering to be measured down to scales never probed before, 0.04 Mpc/h in rp for the projected 2-point correlation function (2PCF) and 0.17 Mpc/h in galaxy pair separation s for the 2PCF monopole and quadrupole. The most striking feature of the measurements is a strong signal at the smallest scales, below 0.2 Mpc/h in rp and 1 Mpc/h in s. We analyse these data in the halo occupation distribution framework. We consider different distributions for central galaxies, a standard power law for satellites with no condition on the presence of a central galaxy and explore several extensions of these models. For all considered models, the mean halo mass of the sample is found to be log10 $\langle$Mh$\rangle$ ~ 11.9. We obtain a satellite mean occupation function which agrees with physically motivated ELG models only if we introduce central-satellite conformity, meaning that the satellite occupation is conditioned by the presence of central galaxies of the same type. To achieve in addition a good modelling of the clustering between 0.1 and 1 Mpc/h in rp, we allow for ELG positioning outside of the halo virial radius and find 0.5% of ELGs residing in the outskirts of halos. Furthermore, the satellite velocity dispersion inside halos is found to be ~ 30% larger than that of the halo dark matter particles. These are the main findings of our work. Here we investigate assembly bias as a function of halo concentration, local density or local density anisotropies and observe no significant change in our results. We split the data sample in two redshift bins and report no significant evolution with redshift. Lastly, changing the cosmology in the modelling impacts only slightly our results.

79 ASTRONOMY AND ASTROPHYSICS↗
DOE OSTI2023

Drift kinetic effects on plasma response to resonant magnetic perturbation for EU DEMO design

Abstract A systematic investigation of the plasma response to an externally applied resonant magnetic perturbation (RMP) field, for the purpose of controlling edge localized modes, is carried out for an EU DEMO reference plasma. Particular emphasis is placed on the role of kinetic effects associated with both thermal particles and fusion-born alphas. The single fluid, resistive model predicts a large peak amplification of the n = 1 ( n is the toroidal mode number) plasma response to the target equilibrium, which is found to be close to the Troyon no-wall limit. A more advanced response model, including kinetic resonances between the RMP perturbation and drift motions of thermal and energetic particles, on the other hand, finds a strong suppression of the n = 1 field amplification. A major role is played by the precessional drift resonance of fusion-born alphas. A strong parallel sound wave damping model is found to well reproduce the full kinetic response results for the DEMO plasma, in terms of both the resonant field response amplitude and the plasma displacement. Finally, both fluid and kinetic models produce similar responses for the n = 2 and 3 RMP fields for the considered DEMO plasma, whilst kinetic effects again become important for the n = 4 RMP due to proximity of the reference plasma to the no-wall limit for the n = 4 ideal kink instability.

Physics↗
DOE OSTI2022

Ultrastrong Coupling of Band‐Nested Excitons in Few‐Layer Molybdenum Disulphide

Abstract The 2D transition‐metal dichalcogenides (2D TMDCs) are an intriguing platform for studying strong light–matter interactions because they combine the electronic properties of conventional semiconductors with the optical resonances found in organic systems. However, the coupling strengths demonstrated in strong exciton–polariton coupling in the 2D TMDCs remain much lower than those found in organic systems. In this paper, a new approach is taken by utilizing the large oscillator strength of the above‐band gap C exciton in few‐layer molybdenum disulphide (FL‐MoS 2 ). A k ‐space Rabi splitting of 293 meV is shown when coupling FL‐MoS 2 C excitons to surface plasmon polaritons at room temperature. This value is 11% of the uncoupled exciton energy (2.67 eV or 464 nm), ≈2× what is typically seen in the TMDCs, placing the system in the ultrastrong coupling regime. The results take a step toward finally achieving the efficient quantum coherent processes of ultrastrong coupling in a CMOS‐compatible system—the 2D TMDCs—in the visible spectrum.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Stabilizing the heavily-doped and metallic phase of MoS 2 monolayers with surface functionalization

Monolayer molybdenum disulfide (MoS 2 ) is one of the most studied two-dimensional (2D) transition metal dichalcogenides that is being investigated for various optoelectronic properties, such as catalysis, sensors, photovoltaics, and batteries. One such property that makes this material attractive is the ease in which 2D MoS 2 can be converted between the semiconducting (2H) and metallic/semi-metallic (1T/1T') phases or heavily n-type doped 2H phase with ion intercalation, strain, or excess negative charge. Using n-butyl lithium (BuLi) immersion treatments, we achieve 2H MoS 2 monolayers that are heavily n-type doped with shorter immersion times (10–120 mins) or conversion to the 1T/1T' phase with longer immersion times (6–24 h); however, these doped/converted monolayers are not stable and promptly revert back to the initial 2H phase upon exposure to air. To overcome this issue and maintain the modification of the monolayer MoS 2 upon air exposure, we use BuLi treatments plus surface functionalization p-(CH 3 CH 2 ) 2 NPh-MoS 2 (Et 2 N-MoS 2 )—to maintain heavily n-type doped 2H phase or the 1T/1T' phase, which is preserved for over two weeks when on indium tin oxide or sapphire substrates. We also determine that the low sheet resistance and metallic-like properties correlate with the BuLi immersion times. These modified MoS 2 materials are characterized with confocal Raman/photoluminescence, absorption, x-ray photoelectron spectroscopy as well as scanning Kelvin probe microscopy, scanning electrochemical microscopy, and four-point probe sheet resistance measurements to quantify the differences in the monolayer optoelectronic properties. We will demonstrate chemical methodologies to control the modified monolayer MoS 2 that likely extend to other 2D transition metal dichalcogenides, which will greatly expand the uses for these nanomaterials.

2D TMDC↗
DOE OSTI2021

Humidity sensor

The present disclosure relates to a device that includes a light source, a detector; and a film having a first surface that includes a transition metal dichalcogenide, where the film is configured to interact with a volume of gas containing a concentration of water vapor, the light source is configured to shine a first light onto the first surface, the film is configured, as a result of the first light, to emit from the first surface a second light, the detector is configured to receive at least a portion of the second light, and the detector is configured to generate a signal proportional to an intensity of the second light.

Zhang, Hanyu↗
DOE OSTI2021

Probing Activities of Individual Catalytic Nanoflakes by Tunneling Mode of Scanning Electrochemical Microscopy

The tunneling mode of scanning electrochemical microscopy (SECM) was developed recently and applied to studies of charge-transfer reactions at single metal nanoparticles (NPs). When an SECM tip is brought within the tunneling distance from a conductive NP, the particle begins to act as a part of the nanoelectrode. Herein, we demonstrate the possibility of using carbon nanoelectrodes with a very thin insulating sheath for electrochemical tunneling experiments at flat samples. In this way, electrocatalytic activity, conductivity, and charging properties of and faradaic processes in layered nanomaterials can be characterized by single-nanoflake voltammetry without making direct ohmic contact with them. A broad applicability of tunneling SECM experiments is demonstrated by probing nanomaterials with different size, geometry, and electrocatalytic properties, including metallic/pseudo-metallic (1T/1T') and semiconducting (2H) MoS 2 nanoflakes, N-doped porous carbon catalyst, and MXene nanosheets. Further, the Tafel plots for the hydrogen evolution reaction (HER) and oxygen evolution reaction (OER) at individual nanoflakes are compared to analogous measurements for an ensemble of flakes attached to the surface of a macroscopic electrode. Moreover, we observed variations in catalytic activities of individual MXene flakes toward HER and OER caused by non-uniform doping.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2021

Atomlike interaction and optically tunable giant band-gap renormalization in large-area atomically thin MoS2

Coulomb interactions in atomically thin transition metal dichalcogenides can be dynamically engineered by exploiting the dielectric environment to control the optical and electronic properties. Here we demonstrate an optically tunable giant band-gap renormalization (BGR) ~1200 and 850 meV from the edge of the conduction band and complete suppression of the exciton absorption in large-area single-layer (1L) and three-layer (3L) MoS2, respectively. The observed giant BGR is two orders of magnitude larger than that in the conventional semiconductors, and it persists for tens of ps. Strikingly, our results demonstrate photoinduced transparency at the electronic band gap using an intense optical field at room temperature. Exciton bleach recovery in 1L and 3L show a contrasting fluence-dependent response, demonstrating the layer-dependent optical tuning of exciton lifetime in a way that would be both reversible and real time. We find that the optical band gap (exciton resonance peak) shows a transient redshift followed by an anomalous blueshift from the lowest energy point as a function of the photo-generated carrier density. The observed exciton energy shift is analogous to atom-atom interactions, and it varies as a Lennard-Jones like potential as a function of the interexciton separation.

2D semiconductors↗
DOE OSTI2021

Surface Conversion of Single-Crystal Bi 2 Se 3 to β-In 2 Se 3

In this work, we demonstrate that the surface layers of single-crystal layered-2D Bi 2 Se 3 can be converted to layered-2D rhombohedral ß-In 2 Se 3 by annealing under a trimethylindium (TMIn) flux. Samples were prepared in a metalorganic chemical vapor deposition (MOCVD) chamber, then transferred under vacuum to a surface analysis chamber for analysis with low-energy electron diffraction (LEED) and Auger electron spectroscopy. Additional ex situ characterization included x-ray diffraction, transmission-electron microscopy (TEM), energy dispersive x-ray spectroscopy (EDS) elemental mapping, and Raman spectroscopy. The resulting single-crystal ß-In 2 Se 3 adopts the rhombohedral crystal structure (space group R-3m) and orientation of the underlying Bi 2 Se 3 , and the excess Bi atoms generated by this process create an underlying region of Bi-rich Bi x Se y . Due to the difference in bandgap between Bi 2 Se 3 and In 2 Se 3 , this conversion reaction presents a pathway to lateral heterojunctions if only selected regions are converted by masking the surface to spatially define the TMIn exposure. The conversion may also have implications for heteroepitaxy, because the in-plane lattice constants of Bi 2 Se 3 and In 2 Se 3 (0001) surfaces match those of InP and GaAs (111), respectively, and the natural cleavage planes of a layered-2D crystal facilitate substrate removal and reuse.

14 SOLAR ENERGY↗
DOE OSTI2021

Functionalized metal chalcogenides of partially it crystalline phase

The present disclosure relates to a composition that includes a metal chalcogenide having a surface and a ligand, where the ligand is covalently bound to the surface. In some embodiments of the present disclosure, the metal chalcogenide may be defined by MXz, where Z is between 1 and 3, inclusively, M (a metal) includes at least one of Sc, Zr, Hf, Zr, Ti, Nb, Ta, V, Mo, Cr, Re, W, S, Pt, Fe, Cu, Sb, In, Zn, Cd, P, and/or Mn, and X (a chalcogenide) includes at least one of S, Se, and/or Te.

Zhang, Hanyu↗
DOE OSTI2021

Interplay between microstructure, defect states, and mobile charge generation in transition metal dichalcogenide heterojunctions

Two-dimensional transition metal dichalcogenides (2D-TMDCs) have gained attention for their promise in next-generation energy-harvesting and quantum computing technologies, but realizing these technologies requires a greater understanding of TMDC properties that influence their photophysics. To this end, we discuss here the interplay between TMDC microstructure and defects with the charge generation yield, lifetime, and mobility. As a model system, we compare monolayer-only and monolayer-rich MoS 2 grown by chemical vapor deposition, and we employ the TMDCs in Type-II charge-separating heterojunctions with semiconducting single-walled carbon nanotubes (s-SWCNTs). Our results suggest longer lifetimes and higher yields of mobile carriers in samples containing a small fraction of defect-rich multilayer islands on predominately monolayer MoS 2 . Compared to the monolayer-only heterojunctions, the carrier lifetimes increase from 0.73 μs to 4.71 μs, the hole transfer yield increases from 23% to 34%, and the electron transfer yield increases from 39% to 59%. We reach these conclusions using a unique combination of microwave photoconductivity (which probes only mobile carriers) along with transient absorption spectroscopy (which identifies spectral signatures unique to each material and type of photoexcited quasiparticle, but does not probe mobility). Overall, our results highlight the substantial changes in photophysics that can occur from small changes in TMDC microstructure and defect density, where the presence of defects does not necessarily preclude improvements in charge generation.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2020

Spatially Resolved Persistent Photoconductivity in MoS2–WS2 Lateral Heterostructures

The optical and electronic properties of 2D semiconductors are intrinsically linked via the strong interactions between optically excited bound species and free carriers. Here we use near-field scanning microwave microscopy (SMM) to image spatial variations in photoconductivity in MoS 2 –WS 2 lateral multijunction heterostructures using photon energy-resolved narrowband illumination. We find that the onset of photoconductivity in individual domains corresponds to the optical absorption onset, confirming that the tightly bound excitons in transition metal dichalcogenides can nonetheless dissociate into free carriers. These photogenerated carriers are most likely n-type and are seen to persist for up to days. Informed by finite element modeling we reveal that they can increase the carrier density by up to 200 times. This persistent photoconductivity appears to be dominated by contributions from the multilayer MoS 2 domains, and we attribute the flake-wide response in part to charge transfer across the heterointerface. Spatial correlation of our SMM imaging with photoluminescence (PL) mapping confirms the strong link between PL peak emission photon energy, PL intensity, and the local accumulated charge. This work reveals the spatially and temporally complex optoelectronic response of these systems and cautions that properties measured during or after illumination may not reflect the true dark state of these materials but rather a metastable charged state.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗