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Zhang, Limin

Publications and source records attributed to Zhang, Limin.

Atomistic simulation of brittle-to-ductile transition in silicon carbide embedded with nano-sized helium bubbles

In this study, the tensile response of cubic silicon carbide (SiC) bulk containing cavities (voids and He bubbles) has been investigated using molecular dynamic simulations. The formation of cavities in SiC leads to a significant degradation in the mechanical properties of SiC with more influence on material fracture than initial elastic deformation. The brittle-to-ductile transition occurs in cavity-embedded SiC as the pressure in He bubbles increases. This is associated with the deformation mechanism that bond breaking at a low He bubble pressure transfers to extensive dislocation activities at a higher He bubble pressure. The cavities can effectively concentrate stress around them in the direction perpendicular to the tension, which leads to preferred cracking in the region with a higher tensile stress. The failure mechanism as revealed by this study improves understanding of property degradation in SiC that may be useful for applications of SiC in advanced nuclear energy systems.

73 NUCLEAR PHYSICS AND RADIATION PHYSICS↗

Behavior of helium cavities in ion-irradiated W-Ni-Fe ductile-phase toughened tungsten

This study reports on the distribution of helium (He) cavities in a hot-rolled W-Ni-Fe ductile-phase toughened tungsten (DPT W) composite irradiated to a dose and a helium concentration that are comparable to those in the material after 5-year irradiation in a conceptual fusion power plant. Here, the DPT W sample consists of W particles embedded in a ductile-phase NiFeW matrix with a nominal composition of 90W-7Ni-3Fe by weight. It was hot-rolled to a thickness reduction by 87% (87R DPT W). Sequential irradiation of the material with 1.2 MeV Ni + ions to a fluence of 2.15×10 16 Ni + /cm 2 and 90 keV He + ions to 6.5×10 15 He + /cm 2 was performed at 973 K. Larger He cavities with a lower number density are observed in NiFeW than W. Helium cavities are aggregated preferentially along the NiFeW/W interphase boundary. This behavior is not observed along the W/W grain boundary under the same irradiation conditions. A similar distribution of He cavities with comparable sizes is observed in 87R DPT W irradiated with He + ions only, suggesting that the He cavity distribution is not significantly affected by pre-irradiation of Ni + ions at 973 K. The data from this study does not provide any evidence for formation of visible voids or Ni precipitates in W phase irradiated with Ni + ions only. Diffusion and clustering of He atoms and mobile vacancies during ion irradiation at 973 K are responsible for the formation and growth of the He cavities.

36 MATERIALS SCIENCE↗

Temperature dependence of irradiation-induced nanocrystallization in amorphous silicon carbide

Ion irradiation induced nucleation and growth in amorphous SiC at elevated temperatures are investigated in this study. Both as-deposited amorphous and Kr ion irradiation-amorphized SiC films are used for the investigation. Similar behavior of particle precipitation in the two types of the films is observed. It is found that the threshold temperature for nucleation is between 550 and 700 K, which is considerably higher than the critical temperature for full amorphization in SiC irradiated with Kr ions. There is a temperature regime up to at least 900 K, where the growth rates are only weakly dependent of the irradiation temperature. This temperature regime is potentially useful to tailor the size and density of nanocrystalline SiC precipitates by optimizing the ion irradiation conditions.

Ion irradiation, Nucleation and Growth, Silicon Ca↗

Modified bornite materials with high electrochemical performance for sodium and lithium storage

Mineral-based functional materials have attracted enormous attention due to the advantages of high production, good material consistency, environmental friendliness, and low cost. However, the efficient utilization of natural minerals for high-performance energy storage is rarely reported. Here, we demonstrate a mineral-derived anode material Cu 5 FeS 4 coated with carbon for both sodium-ion and lithium-ion batteries. The findings show that ball milling bornite in the presence of polyvinylpyrrolidone followed by optimal-temperature carbonization results in S, N-codoped Cu 5 FeS 4 particles with the desired surface properties, enhanced electronic conductivity, and abundant active sites that deliver high reversible capacity and maintain superior long-term cycling performance at a high current density of 2.0 A g –1 . This work sheds light on potential energy storage use cases for naturally abundant mineral-based materials.

25 ENERGY STORAGE↗

Amorphization resistance of nanocrystalline 3C-SiC implanted with H2+ ions

Compared to single-crystal SiC, nanocrystalline SiC with high densities of stacking faults has been reported to be much more resistant to amorphization under self-ion and electron irradiations. This study examines H2+ ion irradiation-induced amorphization in nanocrystalline 3C-SiC with dense stacking faults using transmission electron microscopy. The results show that full amorphization at room temperature occurs at a comparable dose to that for its single-crystal SiC counterpart under the identical irradiation conditions. Both materials are amorphized as a result of local damage accumulation. The formation of the nucleation sites for amorphization is not appreciably affected by the presence of stacking faults and grain boundaries. The behavior may be attributed to the significant chemical effects that may completely immobilize the point defects in SiC at room temperature. The results suggest cautions be excised to use nanocrystalline SiC materials in high H irradiation environment at room temperature. Further studies of the H behavior at elevated temperatures are warranted.

Amorphization, ion irradiation, SiC↗

Combined Effects of Fe(III)-Bearing Clay Minerals and Organic Ligands on U(VI) Bioreduction and U(IV) Speciation

Reduction of U(VI) to U(IV) drastically reduces its solubility and has been proposed as a method for remediation of uranium contamination. However, much is still unknown about the kinetics, mechanisms, and products of U(VI) bioreduction in complex systems. In this work, U(VI) bioreduction experiments were conducted with Shewanella putrefaciens strain CN32 in the presence of clay minerals and two organic ligands: citrate and EDTA. In reactors with U and Fe(III)-clay minerals, the rate of U(VI) bioreduction was enhanced due to the presence of ligands, likely because soluble Fe 3+ - and Fe 2+ -ligand complexes served as electron shuttles. In the presence of citrate, bioreduced U(IV) formed a soluble U(IV)-citrate complex in experiments with either Fe-rich or Fe-poor clay mineral. In the presence of EDTA, U(IV) occurred as a soluble U(IV)-EDTA complex in Fe-poor montmorillonite experiments. However, U(IV) remained associated with the solid phase in Fe-rich nontronite experiments through the formation of a ternary U(IV)-EDTA-surface complex, as suggested by the EXAFS analysis. Our study indicates that organic ligands and Fe(III)-bearing clays can significantly affect the microbial reduction of U(VI) and the stability of the resulting U(IV) phase.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Raman study of amorphization in nanocrystalline 3C-SiC irradiated with C+ and He+ ions

This study examines C+ and He+ ion irradiation induced amorphization processes in 3C-SiC nanograins embedded in an amorphous SiC matrix. Raman spectroscopy and Rutherford backscattering spectrometry are used for damage characterization. SiC grains with an average size of either ~6 or ~20 nm were observed to be fully amorphized to a lower dose at room temperature compared to their monocrystalline counterpart under the identical irradiation condition. In addition to damage accumulation induced amorphization in the grains, preferential amorphization at the crystalline/amorphous interfaces could play a significant role. This interface-driven amorphization proceeds at comparable rates for C+ and He+ ion irradiations. The results may have an important implication for nanocrystalline SiC to be applied in advanced nuclear reactors.

Amorphization, Ion irradiation, Silicon carbide, N↗

Rapid fabrication of vascularized and innervated cell-laden bone models with biomimetic intrafibrillar collagen mineralization

Bone tissue, by definition, is an organic–inorganic nanocomposite, where metabolically active cells are embedded within a matrix that is heavily calcified on the nanoscale. Currently, there are no strategies that replicate these definitive characteristics of bone tissue. Here we describe a biomimetic approach where a supersaturated calcium and phosphate medium is used in combination with a non-collagenous protein analog to direct the deposition of nanoscale apatite, both in the intra- and extrafibrillar spaces of collagen embedded with osteoprogenitor, vascular, and neural cells. This process enables engineering of bone models replicating the key hallmarks of the bone cellular and extracellular microenvironment, including its protein-guided biomineralization, nanostructure, vasculature, innervation, inherent osteoinductive properties (without exogenous supplements), and cell-homing effects on bone-targeting diseases, such as prostate cancer. Ultimately, this approach enables fabrication of bone-like tissue models with high levels of biomimicry that may have broad implications for disease modeling, drug discovery, and regenerative engineering.

59 BASIC BIOLOGICAL SCIENCES↗

Grain size variation in nanocrystalline silicon carbide irradiated at elevated temperatures

This study reports on ion irradiation-induced grain growth in nanocrystalline SiC films on Si substrates. The SiC grains with average size ranging from ~2 to 20 nm were embedded in amorphous SiC matrices. Irradiation was performed using 5 MeV Xe23+ ions to 115 ions/nm2 at 700 K. The irradiated films were characterized using x-ray diffraction, transmission electron microscopy and Raman spectroscopy. Significant grain growth is observed for smaller grains that tend to saturate at ~8 nm. In contrast, irradiation of larger grains (~20 nm in size) leads to a decrease in the grain size, which could be associated with the production of lattice disorder within the grains. Homonuclear C-C bonds in the irradiated amorphous SiC matrix are found to be graphitized. This bonding transformation could limit or inhibit grain growth and contribute to the size saturation. The results from this study may suggest nanocrystalline SiC as a promising candidate structural or cladding material for applications in advanced nuclear reactors.

Grain growth, ion irradiation, SiC↗

Ion irradiation induced nucleation and growth of nanoparticles in amorphous silicon carbide at elevated temperatures

Ion irradiation induced crystallization in as-deposited amorphous SiC films is investigated using grazing-angle incidence x-ray diffraction (GIXRD), transmission electron microscopy (TEM) and Raman spectroscopy. Irradiation with 5 MeV Xe to fluence of 115 Xe/nm2 at 700 K results in a homogenous distribution of 3C-SiC grains with an average crystallite size of ~5.7 nm over the entire film thickness (~1 µm). The nucleation and growth processes exhibit a weak dependence on dose in displacements per atom (dpa) in the dose range from 6 to 20 dpa. A transformation of homonuclear C-C bonds from sp3 to sp2 hybridization is observed in the irradiated films, which may be partly responsible for the observed grain size saturation. The results from this study may have a significant impact on synthesis of nanograins in amorphous SiC and other similar materials with effective control of grain size and density by ion irradiation.

phase transformation, SiC, ion irradiation↗

Lattice damage and compositional changes in Xe ion irradiated In{sub x}Ga{sub 1-x}N (x = 0.32−1.0) single crystals

Lattice disorder and compositional changes in In{sub x}Ga{sub 1-x}N (x = 0.32, 0.47, 0.7, 0.8, and 1.0) films on GaN/Al{sub 2}O{sub 3} substrates, induced by room-temperature irradiation of 5 MeV Xe ions, have been investigated using both Rutherford backscattering spectrometry under ion-channeling conditions and time-of-flight secondary ion mass spectrometry. The results show that for a fluence of 3 × 10{sup 13 }cm{sup −2}, the relative level of lattice disorder in In{sub x}Ga{sub 1-x}N increases monotonically from 59% to 90% with increasing indium concentration x from 0.32 to 0.7; a further increase in x up to 1.0 leads to little increase in the disorder level. In contrast to Ga-rich In{sub x}Ga{sub 1-x}N (x = 0.32 and 0.47), significant volume swelling of up to ∼25% accompanied with oxidation in In-rich In{sub x}Ga{sub 1-x}N (x = 0.7, 0.8, and 1.0) is observed. In addition, irradiation-induced atomic mixing occurs at the interface of In-rich In{sub x}Ga{sub 1-x}N and GaN. The results from this study indicate an extreme susceptibility of the high In-content In{sub x}Ga{sub 1-x}N to heavy-ion irradiation, and suggest that cautions must be exercised in applying ion-implantation techniques to these materials at room temperature. Further studies of the irradiation behavior at elevated temperatures are warranted.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Grain growth of nanocrystalline 3C-SiC under Au ion irradiation at elevated temperatures

Nanocrystalline silicon carbide (SiC) represents an excellent model system for a fundamental study of interfacial (grain boundary) processes under nuclear radiation, which are critical to the understanding of the response of nanostructured materials to high-dose irradiation. This study reports on a comparison of irradiation effects in cubic phase SiC (3C-SiC) grains of a few nanometers in size and single-crystal 3C-SiC films under identical Au ion irradiation to a range of doses at 700 K. In contrast to the latter, in which lattice disorder is accumulated to a saturation level without full amorphization, the average grain size of the former increases with dose following a power-law trend. In addition to coalescence, the grain grows through atomic jumps and mass transport, where irradiation induced vacancies at grain boundaries assist the processes. It is found that a higher irradiation temperature leads to slower grain growth and a faster approach to a saturation size of SiC nanograins. The results could potentially have a positive impact on structural components of advanced nuclear energy systems.

Environmental Molecular Sciences Laboratory↗

A survey on resource allocation in high performance distributed computing systems

An efficient resource allocation is a fundamental requirement in high performance computing (HPC) systems. Many projects are dedicated to large-scale distributed computing systems that have designed and developed resource allocation mechanisms with a variety of architectures and services. In our study, through analysis, a comprehensive survey for describing resource allocation in various HPCs is reported. The aim of the work is to aggregate under a joint framework, the existing solutions for HPC to provide a thorough analysis and characteristics of the resource management and allocation strategies. Resource allocation mechanisms and strategies play a vital role towards the performance improvement of all the HPCs classifications. Therefore, a comprehensive discussion of widely used resource allocation strategies deployed in HPC environment is required, which is one of the motivations of this survey. Moreover, we have classified the HPC systems into three broad categories, namely: (a) cluster, (b) grid, and (c) cloud systems and define the characteristics of each class by extracting sets of common attributes. All of the aforementioned systems are cataloged into pure software and hybrid/hardware solutions. The system classification is used to identify approaches followed by the implementation of existing resource allocation strategies that are widely presented in the literature.

97 MATHEMATICS AND COMPUTING↗