Gluon skewed generalized parton distributions of proton from a light-front Hamiltonian approach
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Zhang, Pengxiang↗
Engineering topics
Zhang, Pengxiang
Publications and source records attributed to Zhang, Pengxiang.
Opposing Hysteresis Patterns in Flow and Outflow Macroscopic Fundamental Diagrams and Their Implications
Two key aggregated traffic models are the relationship between average network flow and density (known as the network or flow macroscopic fundamental diagram [flow-MFD]) and the relationship between trip completion and density (known as network exit function or the outflow-MFD [o-FMD]). The flow- and o-MFDs have been shown to be related by average network length and average trip distance under steady-state conditions. However, recent studies have demonstrated that these two relationships might have different patterns when traffic conditions are allowed to vary: the flow-MFD exhibits a clockwise hysteresis loop, while the o-MFD exhibits a counter-clockwise loop. One recent study attributes this behavior to the presence of bottlenecks within the network. The present paper demonstrates that this phenomenon may arise even without bottlenecks present and offers an alternative, but more general, explanation for these findings: a vehicle’s entire trip contributes to a network’s average flow, while only its end contributes to the trip completion rate. This lag can also be exaggerated by trips with different lengths, and it can lead to other patterns in the o-MFD such as figure-eight patterns. A simple arterial example is used to demonstrate this explanation and reveal the expected patterns, and they are also identified in real networks using empirical data. Then, simulations of a congestible ring network are used to unveil features that might increase or diminish the differences between the flow- and o-MFDs. Finally, more realistic simulations are used to confirm that these behaviors arise in real networks.
42 ENGINEERING↗
Variable spin-charge conversion across metal-insulator transition
The charge-to-spin conversion efficiency is a crucial parameter in determining the performance of many useful spintronic materials. Usually, this conversion efficiency is predetermined by the intrinsic nature of solid-state materials, which cannot be easily modified without invoking chemical or structural changes in the underlying system. Here we report on successful modulation of charge-spin conversion efficiency via the metal-insulator transition in a quintessential strongly correlated electron compound vanadium dioxide (VO2). By employing ferromagnetic resonance driven spin pumping and the inverse spin Hall effect measurement, we find a dramatic change in the spin pumping signal (decrease by > 80%) and charge-spin conversion efficiency (increase by five times) upon insulator to metal transition. The abrupt change in the structural and electrical properties of this material therefore provides useful insights on the spin related physics in a strongly correlated material undergoing a phase transition.
36 MATERIALS SCIENCE↗