Mapping spin interactions from conductance peak splitting in Coulomb blockade
Not provided.
Materials Science↗
Engineering topics
Zhang, Xiao-Guang
Publications and source records attributed to Zhang, Xiao-Guang.
Scattering solution of an interacting Hamiltonian for the electronic control of molecular spin qubits
We theoretically study how a scattered electron can entangle molecular spin qubits (MSQs). This requires solving the inelastic transport of a single electron through a scattering region described by a tight-binding interacting Hamiltonian. We accomplish this using a Green's-function solution. We can model realistic physical implementations of MSQs by parametrizing the tight-binding Hamiltonian with first-principles descriptions of magnetic anisotropy and exchange interactions. As a result, we find that, for two-MSQ systems with inversion symmetry, projective measurement of the spin degree of freedom of the scattered electron offers probabilistic control of the degree of entanglement between the MSQs.
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
Ampere field fluctuation from acoustic phonons as a possible source of spin decoherence
Here, we present a simple theory for estimating spin decoherence due to spin–phonon coupling in a lattice, and apply the theory to the Ampere field fluctuation from acoustic phonons. The Ampere field is generated by charge current loops around each lattice site due to acoustic phonon motion of the ions. The spin decoherence time due to the Ampere field fluctuation is estimated for NV centers and Mo impurities in SiC, and quantum dot qubits in Ge, GaAs, InAs, and InSb for temperature range 2 to 300 K. For most materials the estimated decoherence time is orders of magnitude longer than reported experimental values at the same temperature. The only exception is Mo impurity in SiC, for which the experimental decoherence time at 2 K is close to that due to Ampere field fluctuation.
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
Resistivity of Surface Steps in Bulk-Insulating Topological Insulators
Electron transport in topological insulators usually involves both topologically protected surface states and trivial electronic states in the bulk material. The surface transport is particularly interesting; however, it is also susceptible to atomic defects on the surfaces, such as vacancies, impurities, and step edges. Experimental determination of scattering effects of these surface defects requires both nanoscale spatial resolution and the ability to decipher surface transport from bulk transport. Here we directly measure the resistivity of individual surface steps in the surface dominating transport process of topological insulator Bi 2 Te 2 Se. A variable probe-spacing transport spectroscopy with a multiprobe scanning tunneling microscope is used to differentiate the surface conductance from bulk conductance, allowing the identification of a surface dominant transport regime. The technique also reveals a deviation from ideal 2D transport at atomic steps. Then, a multi-probe scanning tunneling potentiometry is employed to visualize the electrochemical potentials across individual step edges. A quantitative analysis of the potential distributions enables us to acquire a resistivity of 0.530 mΩ · cm for the one quintuple-layer atomic step. The result indicates that atomic defects, despite preserving the time-reversal symmetry, can still significantly affect the transport in topological insulators.
36 MATERIALS SCIENCE↗
Single-molecule magnet Mn 12 on GaAs-supported graphene: Gate field effects from first principles
In this work, we study gate field effects on the Mn 12 O 12 (COOH) 16 (H 2 O) 4 | graphene | GaAs heterostructure via first-principles calculations. We find that under moderate doping levels electrons can be added to but not taken from the single-molecule magnet Mn 12 O 12 (COOH) 16 (H 2 O) 4 (Mn 12 ). The magnetic anisotropy energy (MAE) of Mn 12 decreases as the electron doping level increases, due to electron transfer from graphene to Mn 12 and change in the band alignment between Mn 12 and graphene. At an electron doping level of -5.00×10 13 cm -2 , the MAE decreases by about 18% compared with zero doping. The band alignment between graphene and GaAs is more sensitive to electron doping than to hole doping, since the valence band of GaAs is close to the Fermi level. The GaAs substrate induces a small band gap in the supported graphene under zero gate field and a nearly strain-free configuration. Finally, we propose a vertical tunnel junction for probing the gate dependence of MAE via electron transport measurements.
77 NANOSCIENCE AND NANOTECHNOLOGY↗
First-principles theory for Schottky barrier physics
We develop a first-principles theory for Schottky barrier physics. The Poisson equation is solved selfconsistently with the electrostatic charge density over the entire barrier using the density functional theory (DFT) electronic structure converged locally, allowing computation of a Schottky barrier entirely from DFT involving thousands of atomic layers in the semiconductor (SC). Here, the induced charge in the bulk consists of conduction and valence band charges from doping and band bending, as well as charge from the evanescent states in the gap of the SC. The Schottky barrier height (SBH) is determined when the induced charge density and the induced electrostatic potential reach self-consistency. Tests on the GaAs-graphene and Si/Al heterostructures yield SBH, width, along with depletion and inversion layers obtained self-consistently as functions of temperature and bulk doping.
36 MATERIALS SCIENCE↗
Modeling carrier mobility in graphene as a sensitive probe of molecular magnets
Carrier mobility in graphene on a GaAs substrate and its change due to the adsorption of molecular magnets, Mn 12 and [Mn 3 ] 2 , on the surface of graphene, is calculated from first principles. Phonon limited mobility is also calculated for comparison. For Mn 12 adsorption on graphene, the mobility is compared for different organic ligands of Mn 12 (-H, -CH 3 , and - CHCl 2 ), while for [Mn 3 ] 2 dimers, the mobility is calculated for different linkers that yield the ferromagnetic and anti-ferromagnetic configurations of [Mn 3 ] 2 , as well as for different orientations of the molecule. Significant changes in carrier mobility due to the adsorption of the molecules and due to differences in linkers suggest mobility measurement as a possible sensitive probe of magnetic molecules.
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
Long-Range Magnetic Exchange Pathways in Complex Clusters from First Principles
Not provided.
Chemistry↗