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Zhao, Changying

Publications and source records attributed to Zhao, Changying.

Spectral phase singularity and topological behavior in perfect absorption

Perfect absorbers, which can achieve total absorption of all incoming energy, have been extensively studied in the last decades for various important technologies in general wave systems. Here, we show that perfect absorption (PA) is generically associated with topological spectral phase singularity (SPS), carrying conserved and tunable quantized topological invariants in spectral space. The order of topological invariant $\tilde{v}$ depends on the number of degenerate outgoing channels. Two commonly studied absorbers, mirror-backed and all-dielectric structures, are reexamined from a topological perspective to reveal the generation, evolution, and annihilation of SPSs with $\tilde{v}$ = ±1 or even high orders (i.e., $\tilde{v}$ = ±2,±4). A strategy based on charge conservation of SPSs to design dual-band perfect absorbers has been established. Our findings establish the topological origin of the robust existence of PA. More broadly, in this letter, we highlight topology as the fundamental property of conventional scattering behaviors. Finally, this insight could lead to opportunities in applications such as biosensing, topological metasurfaces, and micro/nano thermal radiation.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Inelastic phonon transport across atomically sharp metal/semiconductor interfaces

Understanding thermal transport across metal/semiconductor interfaces is crucial for the heat dissipation of electronics. The dominant heat carriers in non-metals, phonons, are thought to transport elastically across most interfaces, except for a few extreme cases where the two materials that formed the interface are highly dissimilar with a large difference in Debye temperature. In this work, we show that even for two materials with similar Debye temperatures (Al/Si, Al/GaN), a substantial portion of phonons will transport inelastically across their interfaces at high temperatures, significantly enhancing interface thermal conductance. Moreover, we find that interface sharpness strongly affects phonon transport process. For atomically sharp interfaces, phonons are allowed to transport inelastically and interface thermal conductance linearly increases at high temperatures. With a diffuse interface, inelastic phonon transport diminishes. Our results provide new insights on phonon transport across interfaces and open up opportunities for engineering interface thermal conductance specifically for materials of relevance to microelectronics.

42 ENGINEERING↗