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Zhao, Weiwei

Publications and source records attributed to Zhao, Weiwei.

4 records
All sourcesNASA NTRSDOE OSTI
DOE OSTI2024

Effective Modulation of Interlayer Excitons in WSe 2 /WS 2 Heterostructures by Plasmon–Exciton Interaction

Effective charge transfer and carrier separation at the interface are paramount for optimizing the performance of devices based on van der Waals heterostructures. In this investigation, surface plasmons generated by gold nanoparticles are employed to modulate the photocarrier dynamics in WSe 2 /WS 2 heterostructures. The results of pump-probe measurements reveal that the efficiency of carrier transfer across the WSe 2 /WS 2 heterostructure interface can be significantly enhanced via energy transfer mechanisms mediated by gold plasmons. Moreover, the electric field engendered by the plasmonic oscillations can modulate the dipole moment of the interlayer exciton. These well-aligned excitons avoid the annihilation and the extension of the lifetime of the excitons with increased pump power is realized by screening effect. The findings presented herein offer valuable insights for the active manipulation of charge transfer and extend our understanding of the integral role played by plasmon-exciton coupling in mediating charge separation in van der Waals heterostructures.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2021

Interface-induced sign reversal of the anomalous Hall effect in magnetic topological insulator heterostructures

The Berry phase picture provides important insights into the electronic properties of condensed matter systems. The intrinsic anomalous Hall (AH) effect can be understood as the consequence of non-zero Berry curvature in momentum space. Here, we fabricate TI/magnetic TI heterostructures and find that the sign of the AH effect in the magnetic TI layer can be changed from being positive to negative with increasing the thickness of the top TI layer. Our first-principles calculations show that the built-in electric fields at the TI/magnetic TI interface influence the band structure of the magnetic TI layer, and thus lead to a reconstruction of the Berry curvature in the heterostructure samples. Based on the interface-induced AH effect with a negative sign in TI/V-doped TI bilayer structures, we create an artificial “topological Hall effect”-like feature in the Hall trace of the V-doped TI/TI/Cr-doped TI sandwich heterostructures. Our study provides a new route to create the Berry curvature change in magnetic topological materials that may lead to potential technological applications.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Recent Progress on Topological Structures in Ferroic Thin Films and Heterostructures

Topological spin/polarization structures in ferroic materials continue to draw great attention as a result of their fascinating physical behaviors and promising applications in the field of high-density nonvolatile memories as well as future energy-efficient nanoelectronic and spintronic devices. Such developments have been made, in part, based on recent advances in theoretical calculations, the synthesis of high-quality thin films, and the characterization of their emergent phenomena and exotic phases. Herein, progress over the last decade in the study of topological structures in ferroic thin films and heterostructures is explored, including the observation of topological structures and control of their structures and emergent physical phenomena through epitaxial strain, layer thickness, electric, magnetic fields, etc. First, the evolution of topological spin structures (e.g., magnetic skyrmions) and associated functionalities (e.g., topological Hall effect) in magnetic thin films and heterostructures is discussed. Then, the exotic polar topologies (e.g., domain walls, closure domains, polar vortices, bubble domains, and polar skyrmions) and their emergent physical properties in ferroelectric oxide films and heterostructures are explored. Lastly, a brief overview and prospectus of how the field may evolve in the coming years is provided.

36 MATERIALS SCIENCE↗