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Zhigang, Chen

Publications and source records attributed to Zhigang, Chen.

Model for a transformer-coupled toroidal plasma source

A two-dimensional fluid plasma model for a transformer-coupled toroidal plasma source is described. Ferrites are used in this device to improve the electromagnetic coupling between the primary coils carrying radio frequency (rf) current and a secondary plasma loop. Appropriate components of the Maxwell equations are solved to determine the electromagnetic fields and electron power deposition in the model. The effect of gas flow on species transport is also considered. The model is applied to 1 Torr Ar/NH{sub 3} plasma in this article. Rf electric field lines form a loop in the vacuum chamber and generate a plasma ring. Due to rapid dissociation of NH{sub 3}, NH{sub x}{sup +} ions are more prevalent near the gas inlet and Ar{sup +} ions are the dominant ions farther downstream. NH{sub 3} and its by-products rapidly dissociate into small fragments as the gas flows through the plasma. With increasing source power, NH{sub 3} dissociates more readily and NH{sub x}{sup +} ions are more tightly confined near the gas inlet. Gas flow rate significantly influences the plasma characteristics. With increasing gas flow rate, NH{sub 3} dissociation occurs farther from the gas inlet in regions with higher electron density. Consequently, more NH{sub 4}{sup +} ions are produced and dissociation by-products have higher concentrations near the outlet.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗

Thermally oxidized formation of new Ge dots over as-grown Ge dots in the Si capping layer

A Si-capped Ge quantum dot sample was self-assembly grown via Stranski-Krastanov mode in a molecular beam epitaxy system with the Si capping layer deposited at 300 deg. C. After annealing the sample in an oxygen atmosphere at 1000 deg. C, a structure, namely two layers of quantum dots, was formed with the newly formed Ge-rich quantum dots embedded in the oxidized matrix with the position accurately located upon the as-grown quantum dots. It has been found that the formation of such nanostructures strongly depends upon the growth temperature and oxygen atmosphere. A growth mechanism was proposed to explain the formation of the nanostructure based on the Ge diffusion from the as-grown quantum dots, Ge segregation from the growing oxide, and subsequent migration/agglomeration.

36 MATERIALS SCIENCE↗