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Zhu, S.

Publications and source records attributed to Zhu, S..

At least 19 records

Material exploration towards high quality factor microwave resonators

Niobium and aluminum have been widely used to realize superconducting resonators and qubits. However, the native oxide at the metal air interface limits the devices results. This layer is highly disordered, and it induces losses limiting the performances of the resonators or qubits. Recently, tantalum led to great improvement in qubit relaxation time. This improvement has been attributed to a thinner and less disordered oxide layer compared to Nb and Al. This study is aimed to limit the formation of the oxide layer, by the introduction of novel superconducting materials such as rhenium or by encapsulating the Nb surface with other superconducting materials such as Ta, Al, Re or other non-superconducting materials such as Au. To better understand the results, we are realizing these studies on coplanar waveguide resonators where the relation between surface losses and quality factor is clear. We are also analyzing different fabrication techniques to completely characterize our devices, linking material properties to the performances. In this work we are also varying the participation ratio of the devices in order to extract with higher fidelity and precision the losses introduced by the involved interfaces.

Crisa, F.↗

Lifetimes of excited states in $^{16}$C as a benchmark for ab initio developments

Lifetimes of higher-lying states ($2_2^+$ and $4_1^+$) in 16 C have been measured, employing the Gammasphere and Microball detector arrays, as key observables to test and refine ab initio calculations based on interactions developed within chiral Effective Field Theory. The presented experimental constraints to these lifetimes of $\tau ({2_2^+}) = [244, 446]\,~\textrm{fs}$ and $\tau ({4_1^+}) = [1.8, 4]\,~\textrm{ps}$, combined with previous results on the lifetime of the $2_1^+$ state of 16 C, provide a rather complete set of key observables to benchmark the theoretical developments. We present No-Core Shell-Model calculations using state-of-the-art chiral 2- (NN) and 3-nucleon (3N) interactions at next-to-next-to-next-to-leading order for both the NN and the 3N contributions and a generalized natural-orbital basis (instead of the conventional harmonic-oscillator single-particle basis) which reproduce, for the first time, the experimental findings remarkably well. The level of agreement of the new calculations as compared to the CD-Bonn meson-exchange NN interaction is notable and presents a critical benchmark for theory.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗

Precise measurements of the γ -ray intensities following the β decay of Ce 144 and Nd 147

For many fission products, the γ rays emitted following β decay provide an easily detectable signature that can be used to identify their quantities and distributions in a sample. As a result, γ-ray spectroscopy is often exploited to study fission-product yields, provided sufficiently accurate information on the γ-ray intensities is available. Further, in many cases, the uncertainties in the existing nuclear data are large enough that they compromise the precision achievable for modern experiments and applications. In this paper, we present high-precision results for the absolute γ-ray emission intensities for the most intense transitions in the β decays of 144 Ce and 147 Nd. We measured these intensities to ≲1% accuracy by producing radiopure samples with fission-product beams at CARIBU and detecting the emitted radiation with a 4⁢πβ counter and a meticulously efficiency-calibrated high purity germanium detector at Texas A&M University.

73 NUCLEAR PHYSICS AND RADIATION PHYSICS↗

Transient Torque Method: A Fast and Nonintrusive Technique to Simultaneously Determine Viscosity and Electrical Conductivity of Semiconducting and Metallic Melts

A transient torque method was developed to rapidly and simultaneously determine the viscosity and electrical conductivity of liquid metals and molten semiconductors. The experimental setup of the transient torque method is similar to that of the oscillation cup method. The melt sample is sealed inside a fused silica ampoule, and the ampoule is suspended by a long quartz fiber to form a torsional oscillation system. A rotating magnetic field is used to induce a rotating flow in the conductive melt, which causes the ampoule to rotate around its vertical axis. A sensitive angular detector is used to measure the deflection angle of the ampoule. Based on the transient behavior of the deflection angle as the rotating magnetic field is applied, the electrical conductivity and viscosity of the melt can be obtained simultaneously by numerically fitting the data to a set of governing equations. The transient torque viscometer was applied successfully to measure the viscosity and electrical conductivity of high purity mercury at 53.4 C. The results were in excellent agreement with published data. The method is nonintrusive; capable of rapid measurement of the viscosity of toxic, high vapor pressure melts at elevated temperatures. In addition, the transient torque viscometer can also be operated as an oscillation cup viscometer to measure just the viscosity of the melt or as a rotating magnetic field method to determine the electrical conductivity of a melt or a solid if desired.

Li, C.↗

Transient Torque Method: A Fast and Non-Intrusive Technique to Simultaneously Determine Viscosity and Electrical Conductivity of Semiconducting and Metallic Melts

A transient torque method was developed to rapidly and simultaneously determine the viscosity and electrical conductivity of semiconducting or metallic melts. The experimental setup is similar to that for the oscillation cup technique. The melt sample is sealed inside a fused silica ampoule, and the ampoule is suspended by a long quartz fiber to form a torsional oscillation system. A rotating magnetic field is used to induce a rotating flow in the conductive melt, which causes the ampoule to rotate along its axis. A sensitive angular detector is used to measure the deflection angle of the ampoule. Based on the transient behavior of the deflection angle as the rotating magnetic field is applied, the electrical conductivity and viscosity of the melt can be obtained simultaneously by numerically fitting the data to a set of governing equations. The transient torque viscometer was applied successfully to measure the viscosity and electrical conductivity of high purity mercury at 53.4 C. The results were in excellent agreement with the published data. The main advantage of the technique is that the measurement can be completed in one or two minutes, as opposed to the one or two-hour measurement time required by the oscillation cup technique. The method is non-intrusive; capable of rapid measurement of the viscosity of toxic, high vapor pressure melts at elevated temperatures. In addition, the transient torque viscometer can also be operated as an oscillation cup viscometer if desired.

Li, C.↗

Structural Fluctuations and Thermophysical Properties of Molten II-VI Compounds

The objectives of the project are to conduct ground-based experimental and theoretical research on the structural fluctuations and thermophysical properties of molten II-VI compounds to enhance the basic understanding of the existing flight experiments in microgravity materials science programs as well as to study the fundamental heterophase fluctuation phenomena in these melts by: 1) conducting neutron scattering analysis and measuring quantitatively the relevant thermophysical properties of the II-VI melts (such as viscosity, electrical conductivity, thermal diffusivity and density) as well as the relaxation characteristics of these properties to advance the understanding of the structural properties and the relaxation phenomena in these melts and 2) performing theoretical analyses on the melt systems to interpret the experimental results. All the facilities required for the experimental measurements have been procured, installed and tested. Thermal diffusivity of molten tellurium has been measured by a laser flash method in the temperature range of 500 C to 900 C. The measured diffusivity as a function of temperature agrees fairly well with published data. However, a relaxation phenomenon, which shows a slow drift of the measured thermal conductivity toward the equilibrium value after cooling of the melt, was observed for the first time. An apparatus based on the transient torque induced by a rotating magnetic field has been developed to determine the viscosity and electrical conductivity of semiconducting liquids. Viscosity measurements on molten tellurium showed a similar relaxation behavior to the measured diffusivity. The density and volume expansion coefficients for pure Te and HgTe melts were measured as a function of temperature using a pycnometric method. A density maximum was found for both melts but no relaxation behavior was observed. Neutron scattering experiments were performed on the HgTe and HgZnTe melts and the results on pair distribution showed better resolution than previously reported. A simple kinetic theory, which contains the formation reactions of Te polymerization that increases the molecular weight, was proposed to interpret the relaxation behavior of HgZnTe viscosity data.

Su, Ching-Hua↗

Transient Torque Technique for Viscosity and Electrical Conductivity Determination of Semiconducting Liquids

A novel apparatus based on transient torque technique is constructed in MSFC/NASA. The apparatus uses a 125um diameter quartz fiber as torsion wire. A high sensitive angular detector is implemented to measure the deflection angle of the crucible containing the liquid. A rotating magnetic field (RMF) is used to induce a rotating flow of a conducting or semiconducting melts. By measuring the magnitude and transient behavior of the induced deflection angle, the electrical conductivity and viscosity of the melt can be measured simultaneously. High purity elements namely Hg, Ga, Zn and Te are tested at room temperature and high temperature up to 900 C.

Li, C.↗

Technique for Determining the Viscosity and Electrical Conductivity of Semiconducting Liquids

A novel apparatus for determining the viscosity and electrical conductivity of semiconducting liquids has been developed at NASA/MSFC. The apparatus is based on the transient torque technique and utilizes a 125 micrometer diameter quartz fiber as a torsion wire and a sensitive angular detector to measure the deflection angle of the crucible containing the liquid. A rotating flow is induced in the semiconducting melt by the application of a rotating magnetic field and measurement of the magnitude and transient behavior of the induced deflection angle allows the simultaneous determination of the viscosity and electrical conductivity of the melt. Measurements at room temperature and up to 900 C were made on high purity melts.

Li, C.↗

Transport Phenomena of Off-Axis Sputtering Deposition

Various high quality epitaxial films, especially oxides, have been synthesized using off-axis sputtering deposition. In this presentation, we report the experiment results of ZnO films grown by the off-axis sputtering deposition. Films were synthesized in temperatures ranged from room temperature to 600 C, and pressures from 5 mTorr to 150 mTorr. Film growth rate was measured by surface profilometer, ellipsometer, and wavelength dispersive spectrometry. Due to the collisions between the sputtered species and the residue gases, the kinetic energy of species was reduced and the transport of depositing species changed from a ballistic movement for low pressure to a diffuse drift for high pressure in which the transport species were almost thermalized. The measurements show an increase of growth rates along the gravity vector when the Knodson (Knudsen??) number of transport species is less than 0.05, which suggests that gravity affected the transport characterization in off-axis sputtering deposition. Because the product of pressure (p) and travel distance (d) of sputtered species, p exceeds several mTorr-cm during film deposition, the classical simulations for sputtering process in high vacuum system may not be applied. Based on these experimental measurements, a transport process of the off-axis sputtering deposition is proposed. Several methods including the Monte Carlo method and gravity-driven flow dynamics simulation will be discussed.

Zhu, S.↗

Gravity Effects in Carbon Nanotube Growth by Thermal Chemical Vapor Deposition

Carbon nanotubes are synthesized using thermal chemical vapor deposition. The sizes of these carbon nanotubes (CNT) are quite uniform and the length of the tube is up to several tens of micrometers. With the substrate surface normal either along or against the gravity vector, different growth orientations of CNT are observed by scanning electron microscopy although the Raman spectra are similar for samples synthesized at different locations. These results suggest the gravitation effects in the growth of long and small diameter CNT.

Zhu, S.↗

Synthesis of Carbon Nanotubes Array by CVD

Since the properties of multi-wall carbon nanotubes (MWCNT) are superior in many devices such as electronics and sensors, many efforts have been involved in synthesizing particular structural or dimensional MWCNT. Uniform aligned MWCNT array is one of the prototype structures for devices such as filed emission device and microelectromechanical systems in which a large length to diameter ratio may also be required. Most aligned MWCNT recently synthesized by plasma enhanced chemical vapor deposition (CVD) have cone shaped structures. This presentation will illustrate aligned MWCNT array synthesized on silicon substrates using thermal CVD that could produce MWCNT with uniform diameter. An array of nickel particles was used as catalyst for MWCNT growth. A thin Ti or Au buffer layer was coated on the substrate prior to depositing nickel particles. Because the MWCNT size depends on the catalyst particle size, the nickel particle size annealed at various temperatures was investigated. MWCNT were grown on the substrate in the temperature range of 700 C - 1000 C and the pressure range of 1 to 300 torr. Methane and hydrogen gases with methane content of 1 - 10 % were used for the MWCNT synthesis. Morphology, length and diameter of MWCNT were determined by scanning electron microscopy and Raman spectroscopy. The detailed results of synthesis and characterizations will be discussed in the presentation.

Zhu, S.↗

Controlling Growth Orientation of Phthalocyanine Films by Electrical Fields

Organic Phthalocyanine films have many applications ranging from data storage to various non-linear optical devices whose quality is affected by the growth orientation of Phthalocyanine films. Due to the structural and electrical properties of Phthalocyanine molecules, the film growth orientation depends strongly on the substrate surface states. In this presentation, an electrical field up to 4000 V/cm is introduced during film growth. The Phthalocyanine films are synthesized on quartz substrates using thermal evaporation. An intermediate layer is deposited on some substrates for introducing the electrical field. Scanning electron microscopy, x-ray diffraction, and Fourier transform infrared spectroscopy are used for measuring surface morphology, film structure, and optical properties, respectively. The comparison of Phthalocyanine films grown with and without the electrical field reveals different morphology, film density, and growth orientation, which eventually change optical properties of these films. These results suggest that the growth method in the electrical field can be used to synthesized Phthalocyanine films with a preferred crystal orientation as well as propose an interaction mechanism between the substrate surface and the depositing molecules. The details of growth conditions and of the growth model of how the Phthalocyanine molecules grow in the electrical field will be discussed.

Zhu, S.↗

Carbon Nanotubes Grown By CVD in Various Conditions

Since the superior properties of multi-wall carbon nanotubes (MWCNT) could be used in numerous devices such as electronics and sensors, many efforts have been engaged in synthesizing particular structural or dimensional MWCNT. This presentation will illustrate MWCNT synthesized on silicon substrates by thermal CVD. On the substrate, an array of catalysts is coated using sputtering deposition. A thin Ti buffer layer is also coated on some Si substrates prior to depositing catalyst particles. Nickel, cobalt or iron transition metals are used as catalysts for the MWCNT growth. Since the diameter of MWCNT depends on the size of catalyst particles, the catalyst particle size is investigated after annealed at various temperatures. MWCNT are grown on the substrate in the temperature range of 700 to 1000 C and the pressure range of 100 torr to one atmosphere. Methane and hydrogen gases with methane content of 10% to 100% are used for the MWCNT synthesis. Morphology, length and diameter of these MWCNT are determined by scanning electron microscopy and Raman spectroscopy. The detailed results of syntheses and characterizations will be discussed in the presentation.

Zhu, S.↗

Structure Orientation in Phthalocyanine Film Growth by Vapor Deposition in Electrical Fields

Films of phthalocyanines were grown by vapor deposition in an electric field on to quartz substrates coated with a very thin layer of gold or indium tin oxide and compared to films grown in the absence of an electric field. A comparison of morphology, nonlinear optical properties, and crystal structure was also made. The films were characterized using scanning electron microscopy, x-ray diffraction, and FTIR. Films grown in the absence of an electric field had a fiber like morphology and those grown in electric fields having a maximum strength of 4000 V/cm had a dense-columnar structure. The crystal structure of films grown in an electric field was different than those grown in the absence of a field.

Banks, C. E.↗

Transport Phenomena of Off-Axis Sputtering Deposition

Various high quality epitaxial films, especially oxides, have been synthesized using off-axis sputtering deposition. In this presentation, we report the experiment results of ZnO films grown by the off-axis sputtering deposition. Films were synthesized in temperatures ranged from room temperature to 600 C, and pressures from 5 mTorr to 150 mTorr. Film growth rate was measured by surface profilometer, ellipsometer, and wavelength dispersive spectrometry. Due to the collisions between the sputtered species and the residue gases, the kinetic energy of species was reduced and the transport of depositing species changed from a ballistic movement for low pressure to a diffusive drift for high pressure in which the transport species were almost thermalized. The measurements show an increase of growth rates along the gravity vector when the Knudsen number of transport species is less than 0.05, which suggests that gravity affected the transport characterization in off-axis sputtering deposition. Because the product of pressure (p) and travel distance (d) of sputtered species, pd, exceeds several mTorr-cm during film deposition, the classical simulations for sputtering process in high vacuum system may not be applied. Based on these experimental measurements, a transport process of the off-axis sputtering deposition is proposed. Several models including the Monte Carlo method and gravity-driven flow dynamics simulation will be discussed.

Zhu, S.↗

Growth Orientation of Carbon Nanotubes by Thermal CVD

Carbon nanotubes with a few shells are synthesized using thermal chemical vapor depositions. The sizes of these carbon nanotubes (CNT) are quite uniform and the length is up to several tens of micrometers. With the particular substrate location for which the substrate surface is normal along or against the gravity vector, different growth orientations of CNT are observed by scanning electron microscopy, though the Raman spectra for samples at different locations are similar to each other. The results suggest the gravitation effects in growth of the long and small diameter CNT.

Zhu, S.↗

Carbon Nanotubes Growth by CVD in Various Conditions

Since the superior properties of multi-wall carbon nanotubes (MWCNT could be used in numerous devices such as electronics and sensors, many efforts have been engaged in synthesizing particular structural or dimensional MWCNT. This presentation will illustrate MWCNT synthesized on silicon substrates by thermal CVD. On the substrate, an array of catalysts is coated using sputtering deposition. A thin Ti buffer layer is also coated on some Si substrates prior to depositing catalyst particles. Nickel, cobalt or iron transition metals are used as catalysts for the MWCNT growth. Since the diameter of MWCNT depends on the size of catalyst particles, the catalyst particle size is investigated after annealed at various temperatures. MWCNT are grown on the substrate in the temperature range of 700 to 1000 C and the pressure range of 100 torr to one atmosphere. Methane and hydrogen gases with methane content of 10% to 100% are used for the MWCNT synthesis. Morphology, length and diameter of these MWCNT are determined by scanning electron microscopy and Raman spectroscopy. The detailed results of syntheses and characterizations will be discussed in the presentation.

Zhu, S.↗

Characterization of a Structural Transformation of Carbon Nanotube Materials by Raman Spectroscopy

Raman spectra of carbon nanotubes and carbon microstructure materials synthesized on Si substrates by pulsed laser vaporization have been measured in the range of 50/cm to 4500/cm with the excitation of He-Ne laser. It is found that the formation of nanotubes depends strongly on the growth temperatures and high quality multi-wall and single-wall nanotubes were produced at 700 and 990 C, respectively. The Raman spectra of one sample grown at 700 C were found to be dependent on the excitation intensity. The spectra of the sample suggest that the structure is similar to that of multi-wall nanotubes at low excitation intensity (2.5 kW/sq cm) and it converts to the structure of single-wall nanotubes at higher intensity (25 kW/sq cm). Measurements taken while cycling the light intensity indicate a reversible structural transition.

Cui, Y.↗