Engineering topics

Zhu, Zheng

Publications and source records attributed to Zhu, Zheng.

4 records

DOE OSTI2022

Doped Mott insulators in the triangular-lattice Hubbard model

Here we investigate the evolution of the Mott insulators in the triangular lattice Hubbard Model, as a function of hole doping δ in both the strong and intermediate coupling limits. Using the advanced density matrix renormalization group (DMRG) method, at light hole doping δ ≲ 10%, we find a significant difference between strong and intermediate couplings. Notably, at intermediate coupling an unusual metallic state emerges, with short ranged spin correlations but long ranged spin-chirality order. Moreover, no clear Fermi surface or wave vector is observed, this chiral metal also exhibits staggered loop current, which breaks the translational symmetry. These features disappear on increasing interaction strength or on further doping. At strong coupling, the 120 degree magnetic order of the insulating magnet persists for light doping, and produces hole pockets with a well-defined Fermi surface. On further doping, δ ≈ 10%~20% SDW order and coherent hole Fermi pockets are found at both strong and intermediate couplings. At even higher doping δ ≳ 20%, the SDW order is suppressed and the spin-singlet Cooper pair correlations are simultaneously enhanced. We also briefly comment on the strong particle-hole asymmetry of the model.

36 MATERIALS SCIENCE↗

DOE OSTI2020

Evaluating the Ratio of Electron and Hole Mobilities from a Single Bulk Sample Using Photo-Seebeck Effect

When a semiconductor is under photoexcitation, the voltage response to a temperature gradient is the photo-Seebeck effect. In this work, we study this effect, focusing on the contribution from transport of photo-excited carriers. We demonstrate that by combining photo-Seebeck with photoconductivity measurements, one can determine the ratio between electron and hole mobilities, and hence both of them when one is known. This is found for the case of defect-free samples, where no detail on the absorbance, carrier lifetime or recombination is necessary. Our method reported here does not require chemical doping, which could introduce defects and is often not feasible. It applies to both thin film and bulk samples. Experiment wise, photo-Seebeck effect is relatively easy to implement, or added to existing systems. In a broader context, for semiconductors with significant influence from defects, our result suggests that the photo-Seebeck behavior can still be understood. In this case another photo-transport property is necessary, in order to identify the mobilities of carriers and information regarding the defects. This framework integrates the information from photoexcitation and thermal gradients to provide a general method to determine fundamental electronic properties of materials.

36 MATERIALS SCIENCE↗

DOE OSTI2020

Magnetic and transport properties of amorphous, B 2 and L 2 1 Co 2 MnGa thin films

We have studied the magnetic and transport properties of Co 2 MnGa (CMG) thin films grown on MgO(100) substrates in terms of their chemical evolution from amorphous to ordered L 2 1 phases at the substrate temperature T s during the thin film deposition. Interestingly, the chemical order and magnetic properties sharply change depending on T s . The CMG film deposited at T s = 550 °C exhibits the L 2 1 -ordered structure and the magnetization of 3.5 μ B /f.u., while the CMG film deposited at T s = 300 °C shows a B 2-ordered structure and a relatively lower magnetization of 3 μ B /f.u., possibly due to the Mn–Mn antiferromagnetic interactions. A metallic behavior of the electrical resistivity appeared in the CMG film deposited at T s = 550 °C, whereas the semiconducting behavior appeared in the CMG films deposited at 300 °C and room temperature. Moreover, we found that the absolute value of α = d(Δ ρ )/d( T 1/2 ) in the low-temperature range below about 20 K is a measure to evaluate the degree of the chemical disorder. In a Hall effect measurement, the L 2 1 -ordered CMG film obtained at T s = 550 °C shows a sizable anomalous Hall resistivity of 15 µ Ω cm. This study unveils the relation between T s and atomic ordering, providing a new pathway for optimizing the chemical order.

36 MATERIALS SCIENCE↗

DOE OSTI2020

Widely Tunable Quantum Phase Transition from Moore-Read to Composite Fermi Liquid in Bilayer Graphene

Here, we develop a proposal to realize a widely tunable and clean quantum phase transition in bilayer graphene between two paradigmatic fractionalized phases of matter: the Moore-Read fractional quantum Hall state and the composite Fermi liquid metal. This transition can be realized at total fillings $\textit{ν}$ = ±3 + 1/2 and the critical point can be controllably accessed by tuning either the interlayer electric bias or the perpendicular magnetic field values over a wide range of parameters. We study the transition numerically within a model that contains all leading single particle corrections to the band structure of bilayer graphene and includes the fluctuations between the $\textit{n}$ = 0 and $\textit{n}$ = 1 cyclotron orbitals of its zeroth Landau level to delineate the most favorable region of parameters to experimentally access this unconventional critical point. We also find evidence for a new anisotropic gapless phase stabilized near the level crossing of $\textit{n}$ = 0/1 orbits.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗