Engineering topics
Publications and source records attributed to Zoltan, Andrew.
A high-efficiency thermoelectric unicouple is used for power generation. The unicouple is formed with a plurality of legs, each leg formed of a plurality of segments. The legs are formed in a way that equalizes certain aspects of the different segments. Different materials are also described.
Report describes application of flash diffusivity method to measure thermal conductivity of 8.04 x 8.84 x 2.35-mm specimen of natural, white, type-IIa diamond at temperatures between 500 and 1,250 K. Provides baseline for comparison to isotopically pure (12C) diamond. Results used as reference against which diamond films produced by chemical-vapor deposition at low pressures can be compared. High thermal conductivity of diamond exploited for wide variety of applications, and present results also used to estimate heat-conduction performances of diamond films in high-temperature applications.
Heat treatment restores thermoelectric performance having deteriorated under irradiation by neutrons. Discovery suggests SiGe materials used in radioisotope thermoelectric generators and other applications up to fluences of 5.4 X 10(to the 19th power)cm(to the negative 2nd power) and operating at temperatures of 600 to 1,000 degrees C.
Experimental and theoretical efforts directed toward increasing thermoelectric figure of merit values by a factor of 2 or 3 have been encouraging in several respects. An accurate and detailed theoretical model developed for n-type silicon-germanium (SiGe) indicates that ZT values several times higher than currently available are expected under certain conditions. These new, high ZT materials are expected to be significantly different from SiGe, but not unreasonably so. Several promising candidate materials have been identified which may meet the conditions required by theory. One such candidate, ruthenium silicide, currently under development at JPL, has been estimated to have the potential to exhibit figure of merit values 4 times higher than conventional SiGe materials. Recent results are summarized.
Flash apparatus for measuring thermal diffusivities at temperatures from 300 to 1,000 degrees C modified; measures specific heats of samples to accuracy of 4 to 5 percent. Specific heat and thermal diffusivity of sample measured. Xenon flash emits pulse of radiation, absorbed by sputtered graphite coating on sample. Sample temperature measured with thermocouple, and temperature rise due to pulse measured by InSb detector.