Measurement of Electrical Properties of Undoped Diamond Films between
The high temperature electrical resistivity, measured between room.
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The high temperature electrical resistivity, measured between room.
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The electrical resistivity of diamond films has been measured between room temperature and 1200 C. The films were grown by either microwave Plasma CVD or combustion flame at three different places. The resistivities of the current films are compared to those measured for both natural IIa diamond and films grown only one to two years ago.
Report describes measurement of Seebeck coefficient, electrical resistivity, thermal conductivity, and Hall effect in gamma-phase lanthanum sulfide with composition of La3-x S4. Results of study, part of search for high-temperature thermoelectric energy-conversion materials, indicate this sulfide behaves like extrinsic semiconductor over temperature range of 300 to 1,400 K, with degenerate carrier concentration controlled by stoichiometric ratio of La to S.
Apparatus takes measurements and analyzes data automatically. Cylindrical sample is pressed between heater and water-cooled baseplate. Thermocouples at opposite ends of sample provide both temperatures and Seeback voltages. Conveniently shaped samples used, and results calculated by microcomputer and printed out.