Engineering topics

Zou, Guifu

Publications and source records attributed to Zou, Guifu.

3 records

DOE OSTI2019

Fabrication of Nickel Oxide Nanopillar Arrays on Flexible Electrodes for Highly Efficient Perovskite Solar Cells

Semiconductor nanomaterials with controlled morphologies and architectures are of critical importance for high-performance optoelectronic devices. However, the fabrication of such nanomaterials on polymer-based flexible electrodes is particularly challenging due to degradation of the flexible electrodes at a high temperature. In this paper, we report the fabrication of nickel oxide nanopillar arrays (NiO x NaPAs) on a flexible electrode by vapor deposition, which enables highly efficient perovskite solar cells (PSCs). The NiO x NaPAs exhibit an enhanced light transmittance for light harvesting, prohibit exciton recombination, promote irradiation-generated hole transport and collection, and facilitate the formation of large perovskite grains. These advantageous features result in a high efficiency of 20% and 17% for the rigid and flexible PSCs, respectively. Additionally, the NaPAs show no cracking after 500 times of bending, consistent with the mechanic simulation results. Lastly, this robust fabrication opens a new opportunity for the fabrication of a large area of high-performance flexible optoelectronic devices.

14 SOLAR ENERGY↗

DOE OSTI2019

MoS 2 –OH Bilayer-Mediated Growth of Inch-Sized Monolayer MoS 2 on Arbitrary Substrates

Due to remarkable electronic property, optical transparency, and mechanical flexibility, monolayer molybdenum disulfide (MoS 2 ) has been demonstrated to be promising for electronic and optoelectronic devices. To date, the growth of high-quality and large-scale monolayer MoS 2 has been one of the main challenges for practical applications. In this paper, we present a MoS 2 –OH bilayer-mediated method that can fabricate inch-sized monolayer MoS 2 on arbitrary substrates. This approach relies on a layer of hydroxide groups (-OH) that are preferentially attached to the (001) surface of MoS 2 to form a MoS 2 –OH bilayer structure for growth of large-area monolayer MoS 2 during the growth process. Specifically, the hydroxide layer impedes vertical growth of MoS 2 layers along the [001] zone axis, promoting the monolayer growth of MoS 2 , constrains growth of the MoS 2 monolayer only in the lateral direction into larger area, and effectively reduces sulfur vacancies and defects according to density functional theory calculations. Finally, the hydroxide groups advantageously prevent the MoS 2 from interface oxidation in air, rendering high-quality MoS 2 monolayers with carrier mobility up to ~30 cm 2 V –1 s –1 . Using this approach, inch-sized uniform monolayer MoS 2 has been fabricated on the sapphire and mica and high-quality monolayer MoS 2 of single-crystalline domains exceeding 200 μm has been grown on various substrates including amorphous SiO 2 and quartz and crystalline Si, SiC, Si 3 N 4 , and graphene Finally, this method provides a new opportunity for the monolayer growth of other two-dimensional transition metal dichalcogenides such as WS 2 and MoSe 2 .

36 MATERIALS SCIENCE↗

DOE OSTI2017

Anomalous Surface Doping Effect in Semiconductor Nanowires

Surface doping is being used as an effective approach to improve the mechanical, optical, electronic, and magnetic properties of various materials. For example, experimental studies have proven that rare-earth element doping can enhance the optical properties of silicon nanostructures. However, the majority of previous investigations focused on either bulk materials or nanosized spherical crystals. Here we present a comparative study on semiconducting germanium (Ge) nanowires with and without surface doping by using multiple integrated characterization probes, including high resolution scanning/transmission electron microscopy (SEM/TEM), in situ high pressure synchrotron X-ray diffraction (XRD), and Raman spectroscopy. Our results reveal that under pressure the stability of the Ge-I phase (diamond structure) in erbium (Er)-doped Ge nanowires is enhanced compared to undoped Ge nanowires. We also found an increased stability of the Ge-II phase (body centered tetragonal structure) in Er-doped Ge nanowires during decompression. Furthermore, the presence of Er doping elevates the transition kinetics by showing a smaller pressure span needed for a complete Ge-I to Ge-II phase transformation. In contrast, Er doping has a negligible impact on the mechanical properties of Ge nanowires under high pressure, exhibiting a very different mechanical behavior from other foreign element-doped nanostructures. This anomalous doping effect was explained based on surface modification and decoration. Furthermore, these findings are of both fundamental and applied significance, because they not only provide a thorough understanding of the distinct role of surface doping in nanoscale materials, but also yield insight with regard to a given material’s design for favorable properties in semiconductor nanostructures.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗