Adatom condensation and quantum dot sizes in InGaAs/GaAs (001)
The sizes and concentrations of capped and surface InGaAs/GaAs quantum dots (QDs) grown under the same conditions have been investigated.
InGaAs/GaAS investigation condensation quantum↗
Engineering topics
Zou, J.
Publications and source records attributed to Zou, J..
Modified Stranski-Krastanow Mode for Ge Island Growth on (001) Si at High Temperature
Transmission electron microscopy is used to study the morphology and the composition profile of pure Ge islands grown at high temperature on (001) Si by molecular beam epitaxy.
transmission electron microscopy growth modes Ge i↗
Inhibited Carrier Transfer in Ensembles of Isolated Quantum Dots
We report significant differences in the temperature dependent and time-resolved photoluminescence(PL) from low and high surface density InGaAs/GaAs quantum dots (QDs).
quantum dots time resolved photoluminescence carri↗
Dislocation-induced Charges in Quantum Dots: Step Alignment and Radiative Emission
A transition between two types of step alignment was observed in a multilayered InGaAs/GaAs quantum-dot (QD) structure. A change to larger QD sizes in smaller concentrations occurred after formation of a dislocation array.
radiative emission step alignment InGaAs/GaAs quan↗
Island Shape Instabilities and Surfactant-Like Effects in the Growth of InGaAs/GaAs Quantum Dots
InGaAs/GaAs island formation during vapor phase epitaxy showed diverging behaviors when varying group V partial pressures (PP). Differences include changes in critical thicknesses for the onset of the Stranski-Krastanow (S-K) transformation, surface coverages, ratios between coherent and incoherent islands, and dissimilar morphologies upon annealing.
Quantum↗
Ensemble Interactions in Strained Semiconductor Quantum Dot
Large variations in InGaAs quantum dot concentrations were obtained with simultaneous growths on vicinal GaAs[001] substrates with different surface step densities.
quantum dots optical properties photoluminescence↗
Ordering, Tunability, and Stability in the Formation of Semiconductor Quantum Dots
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Semiconductor Quantum Dots Metalorganic Vapor Phas↗
Stable and Metastable InGaAs/GaAs Island Shapes and Surfactant-like Suppression of the Wetting Transformation
Diverging behaviors are observed in the InGaAs/GaAs Stranski-Krastanow (S-K) island formation during vapor phase epitaxy: varying group V partial pressures gives different critical thicknesses for the onset of the S-K transformation, island surface coverages, ratios between coherent and incoherent islands, and dissimilar morphologies upon annealing.
InGaAs/GaAs wetting transformation Stranski-Krasta↗