@misc{indiciaefb9901e655f2,
  title = {Silicon dioxide with a silicon interfacial layer as an insulating gate for highly stable indium phosphide metal-insulator-semiconductor field effect transistors},
  author = {Kapoor, V. J. and Shokrani, M.},
  year = {1991},
  url = {https://ntrs.nasa.gov/citations/19910057252},
  note = {Source identifier: 19910057252}
}