TY  - RPRT
TI  - Silicon dioxide with a silicon interfacial layer as an insulating gate for highly stable indium phosphide metal-insulator-semiconductor field effect transistors
AU  - Kapoor, V. J.
AU  - Shokrani, M.
PY  - 1991
UR  - https://ntrs.nasa.gov/citations/19910057252
ID  - 19910057252
ER  -