@misc{indiciae77a10258b430,
  title = {Efficient 3D 'Atomistic' Simulation Technique for Studying of Random Dopant Induced Threshold Voltage Lowering and Fluctuations in Decanano MOSFETs},
  author = {Asenov, Asen},
  year = {1998},
  url = {https://ntrs.nasa.gov/citations/20010007224},
  note = {Source identifier: 20010007224}
}