@misc{indiciae01d44f23acb1,
  title = {Layered boron nitride enabling high-performance AlGaN/GaN high electron mobility transistor},
  author = {Ren, Bing and Liao, Meiyong and Sumiya, Masatomo and Li, Jian and Wang, Lei and Liu, Xinke and Koide, Yasuo and Sang, Liwen},
  year = {2020},
  doi = {10.1016/j.jallcom.2020.154542},
  url = {https://www.osti.gov/biblio/1693854},
  note = {Source identifier: 1693854}
}