@misc{indiciae5f1c0237b4e3,
  title = {Selective area regrowth and doping for vertical gallium nitride power devices: Materials challenges and recent progress},
  author = {Fu, Houqiang and Fu, Kai and Yang, Chen and Liu, Hanxiao and Hatch, Kevin A. and Peri, Prudhvi and Herath Mudiyanselage, Dinusha and Li, Bingjun and Kim, Tae-Hyeon and Alugubelli, Shanthan R. and Su, Po-Yi and Messina, Daniel C. and Deng, Xuguang and Cheng, Chi-Yin and Vatan Meidanshahi, Reza and Huang, Xuanqi and Chen, Hong and Yang, Tsung-Han and Zhou, Jingan and Armstrong, Andrew M. and Allerman, Andrew A. and Yu, Edward T. and Han, Jung and Goodnick, Stephen M. and Smith, David J. and Nemanich, Robert J. and Ponce, Fernando A. and Zhao, Yuji},
  year = {2021},
  doi = {10.1016/j.mattod.2021.04.011},
  url = {https://www.osti.gov/biblio/1833472},
  note = {Source identifier: 1833472}
}