@misc{indiciaee1cd1e33c88e,
  title = {Ion beam etching dependence of spin-orbit torque memory devices with switching current densities reduced by Hf interlayers},
  author = {Ren, Haowen and Wu, Shih-Yu and Sun, Jonathan Z. and Fullerton, Eric E.},
  year = {2021},
  doi = {10.1063/5.0060461},
  url = {https://www.osti.gov/biblio/1852981},
  note = {Source identifier: 1852981}
}