@misc{indiciaec55a255b0b9f,
  title = {High Voltage Regrown GaN P-N Diodes Enabled by Defect and Doping Control},
  author = {Armstrong, Andrew and Feezell, Daniel},
  year = {2022},
  doi = {10.2172/1862286},
  url = {https://www.osti.gov/biblio/1862286},
  note = {Source identifier: 1862286}
}