@misc{indiciaee7b826813a29,
  title = {Initial Stages of Time-Dependent Dielectric Breakdown: Atomic Scale Defects Generated by High-Field Gate Stressing in Si/SiO2 Transistors.},
  author = {Moxim, Stephen J. and Sharov, Fedor V. and Hughart, David and Haase, Gad and Lenahan, Patrick M.},
  year = {2021},
  doi = {10.2172/1891743},
  url = {https://www.osti.gov/biblio/1891743},
  note = {Source identifier: 1891743}
}