TY  - RPRT
TI  - Initial Stages of Time-Dependent Dielectric Breakdown: Atomic Scale Defects Generated by High-Field Gate Stressing in Si/SiO2 Transistors.
AU  - Moxim, Stephen J.
AU  - Sharov, Fedor V.
AU  - Hughart, David
AU  - Haase, Gad
AU  - Lenahan, Patrick M.
PY  - 2021
DO  - 10.2172/1891743
UR  - https://www.osti.gov/biblio/1891743
ID  - 1891743
ER  -