@misc{indiciaecf15aef5e323,
  title = {Non-destructive depth-resolved characterization of residual strain fields in high electron mobility transistors using differential aperture x-ray microscopy},
  author = {Pagan, Darren C. and Rasel, Md J. and Lim, Rachel E. and Sheyfer, Dina and Liu, Wenjun and Haque, Aman},
  year = {2022},
  doi = {10.1063/5.0109606},
  url = {https://www.osti.gov/biblio/1909351},
  note = {Source identifier: 1909351}
}